DE69940369D1 - Nichtflüchtiger Speicher mit Burstlesebetrieb sowie entsprechendes Leseverfahren - Google Patents
Nichtflüchtiger Speicher mit Burstlesebetrieb sowie entsprechendes LeseverfahrenInfo
- Publication number
- DE69940369D1 DE69940369D1 DE69940369T DE69940369T DE69940369D1 DE 69940369 D1 DE69940369 D1 DE 69940369D1 DE 69940369 T DE69940369 T DE 69940369T DE 69940369 T DE69940369 T DE 69940369T DE 69940369 D1 DE69940369 D1 DE 69940369D1
- Authority
- DE
- Germany
- Prior art keywords
- volatile memory
- read operation
- reading method
- burst read
- corresponding reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
- G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99830723A EP1103978B1 (de) | 1999-11-25 | 1999-11-25 | Nichtflüchtiger Speicher mit Burstlesebetrieb sowie entsprechendes Leseverfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69940369D1 true DE69940369D1 (de) | 2009-03-19 |
Family
ID=8243679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69940369T Expired - Lifetime DE69940369D1 (de) | 1999-11-25 | 1999-11-25 | Nichtflüchtiger Speicher mit Burstlesebetrieb sowie entsprechendes Leseverfahren |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6854040B1 (de) |
| EP (1) | EP1103978B1 (de) |
| DE (1) | DE69940369D1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60223051T2 (de) | 2001-08-29 | 2008-07-24 | Analog Devices Inc., Norwood | Anordnung und verfahren zum schnellen einschalten einer phase-locked loop |
| KR100598114B1 (ko) * | 2005-01-25 | 2006-07-10 | 삼성전자주식회사 | 페이지 모드 동작을 수행하는 반도체 메모리 장치 |
| JP4182993B2 (ja) * | 2006-06-30 | 2008-11-19 | Ｔｄｋ株式会社 | メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法 |
| US7414891B2 (en) | 2007-01-04 | 2008-08-19 | Atmel Corporation | Erase verify method for NAND-type flash memories |
| US20080232169A1 (en) * | 2007-03-20 | 2008-09-25 | Atmel Corporation | Nand-like memory array employing high-density nor-like memory devices |
| FR2955436B1 (fr) * | 2010-01-19 | 2012-11-23 | St Microelectronics Rousset | Procede et dispositif de contremesure pour proteger des donnees circulant dans un composant electronique |
| TWI438778B (zh) | 2010-03-25 | 2014-05-21 | Silicon Motion Inc | 用來抑制資料錯誤之方法以及相關之記憶裝置及其控制器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960003526B1 (ko) * | 1992-10-02 | 1996-03-14 | 삼성전자주식회사 | 반도체 메모리장치 |
| US5159672A (en) * | 1989-12-28 | 1992-10-27 | Intel Corporation | Burst EPROM architecture |
| US5696917A (en) * | 1994-06-03 | 1997-12-09 | Intel Corporation | Method and apparatus for performing burst read operations in an asynchronous nonvolatile memory |
| US5966724A (en) * | 1996-01-11 | 1999-10-12 | Micron Technology, Inc. | Synchronous memory device with dual page and burst mode operations |
| US5784705A (en) * | 1996-07-15 | 1998-07-21 | Mosys, Incorporated | Method and structure for performing pipeline burst accesses in a semiconductor memory |
| KR100274591B1 (ko) * | 1997-07-29 | 2001-01-15 | 윤종용 | 동기형 버스트 매스크 롬 및 그것의 데이터 독출 방법 |
| JP4060442B2 (ja) * | 1998-05-28 | 2008-03-12 | 富士通株式会社 | メモリデバイス |
| US6327175B1 (en) * | 1999-09-13 | 2001-12-04 | Cypress Semiconductor Corporation | Method and apparatus for controlling a memory array with a programmable register |
-
1999
- 1999-11-25 DE DE69940369T patent/DE69940369D1/de not_active Expired - Lifetime
- 1999-11-25 EP EP99830723A patent/EP1103978B1/de not_active Expired - Lifetime
-
2000
- 2000-11-21 US US09/717,938 patent/US6854040B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6854040B1 (en) | 2005-02-08 |
| EP1103978B1 (de) | 2009-01-28 |
| EP1103978A1 (de) | 2001-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |