DE69923337D1 - Löten eines halbleiterchips auf ein substrat - Google Patents

Löten eines halbleiterchips auf ein substrat

Info

Publication number
DE69923337D1
DE69923337D1 DE69923337T DE69923337T DE69923337D1 DE 69923337 D1 DE69923337 D1 DE 69923337D1 DE 69923337 T DE69923337 T DE 69923337T DE 69923337 T DE69923337 T DE 69923337T DE 69923337 D1 DE69923337 D1 DE 69923337D1
Authority
DE
Germany
Prior art keywords
soldering
substrate
semiconductor chip
chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69923337T
Other languages
English (en)
Other versions
DE69923337T2 (de
Inventor
Lars-Anders Olofsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE69923337D1 publication Critical patent/DE69923337D1/de
Publication of DE69923337T2 publication Critical patent/DE69923337T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01013—Aluminum [Al]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01056—Barium [Ba]
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    • H01L2924/01059—Praseodymium [Pr]
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    • H01L2924/01061—Promethium [Pm]
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    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
DE69923337T 1998-10-02 1999-09-23 Löten eines halbleiterchips auf ein substrat Expired - Fee Related DE69923337T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9803350 1998-10-02
SE9803350A SE512906C2 (sv) 1998-10-02 1998-10-02 Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav
PCT/SE1999/001669 WO2000021346A1 (en) 1998-10-02 1999-09-23 Soldering of a semiconductor chip to a substrate

Publications (2)

Publication Number Publication Date
DE69923337D1 true DE69923337D1 (de) 2005-02-24
DE69923337T2 DE69923337T2 (de) 2006-04-06

Family

ID=20412803

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69923337T Expired - Fee Related DE69923337T2 (de) 1998-10-02 1999-09-23 Löten eines halbleiterchips auf ein substrat

Country Status (12)

Country Link
US (2) US6206269B1 (de)
EP (1) EP1121840B1 (de)
JP (1) JP2002527892A (de)
KR (1) KR100713114B1 (de)
CN (1) CN1196389C (de)
AU (1) AU1193200A (de)
CA (1) CA2343823A1 (de)
DE (1) DE69923337T2 (de)
ES (1) ES2237207T3 (de)
SE (1) SE512906C2 (de)
TW (1) TW410537B (de)
WO (1) WO2000021346A1 (de)

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DE10314876B4 (de) 2003-04-01 2008-02-14 Infineon Technologies Ag Verfahren zum mehrstufigen Herstellen von Diffusionslötverbindungen und seine Verwendung für Leistungsbauteile mit Halbleiterchips
JP2005205418A (ja) * 2004-01-20 2005-08-04 Denso Corp 接合構造体の製造方法
US7407083B2 (en) * 2004-08-19 2008-08-05 Thermal Corp. Bonded silicon, components and a method of fabricating the same
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US7239517B2 (en) * 2005-04-11 2007-07-03 Intel Corporation Integrated heat spreader and method for using
DE102005024430B4 (de) * 2005-05-24 2009-08-06 Infineon Technologies Ag Verfahren zum Beschichten eines Siliziumwafers oder Siliziumchips
DE102006034600B4 (de) * 2006-07-26 2010-01-14 Infineon Technologies Ag Verfahren zur Herstellung einer Lötverbindung
US7679185B2 (en) 2006-11-09 2010-03-16 Interplex Qlp, Inc. Microcircuit package having ductile layer
US20080136019A1 (en) * 2006-12-11 2008-06-12 Johnson Michael E Solder Bump/Under Bump Metallurgy Structure for High Temperature Applications
US8753983B2 (en) * 2010-01-07 2014-06-17 Freescale Semiconductor, Inc. Die bonding a semiconductor device
CN101819076B (zh) * 2010-04-21 2011-07-27 中国电子科技集团公司第二十四研究所 基于金锡共晶的谐振型压力传感器芯片局部真空封装方法
DE102012216546B4 (de) * 2012-09-17 2023-01-19 Infineon Technologies Ag Verfahren zum verlöten eines halbleiterchips mit einem träger
WO2016184750A1 (en) * 2015-05-21 2016-11-24 Basf Se Glass-ceramic electrolytes for lithium-sulfur batteries
CN105244755B (zh) * 2015-10-24 2018-04-03 长沙青波光电科技有限公司 半导体激光单管芯片封装方法
CN106825825B (zh) * 2017-03-26 2018-11-13 中国电子科技集团公司第十六研究所 一种用于微波毫米波器件组装的高焊透率焊接方法
TWI703646B (zh) * 2019-05-09 2020-09-01 樂鑫材料科技股份有限公司 背晶薄膜結構、包含其之功率模組封裝體、及背晶薄膜結構的製造方法

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Also Published As

Publication number Publication date
DE69923337T2 (de) 2006-04-06
EP1121840A1 (de) 2001-08-08
SE9803350D0 (sv) 1998-10-02
WO2000021346A1 (en) 2000-04-13
SE9803350L (sv) 2000-04-03
KR20010073192A (ko) 2001-07-31
EP1121840B1 (de) 2005-01-19
CN1196389C (zh) 2005-04-06
SE512906C2 (sv) 2000-06-05
KR100713114B1 (ko) 2007-05-02
TW410537B (en) 2000-11-01
CA2343823A1 (en) 2000-04-13
US6255002B1 (en) 2001-07-03
US6206269B1 (en) 2001-03-27
ES2237207T3 (es) 2005-07-16
JP2002527892A (ja) 2002-08-27
AU1193200A (en) 2000-04-26
CN1321409A (zh) 2001-11-07

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