DE69835204D1 - ENTWURF UND HERSTELLUNG VON ELEKTRONISCHEN ANORDNUNGEN MIT InAlAsSb/AlSb BARRIERE - Google Patents
ENTWURF UND HERSTELLUNG VON ELEKTRONISCHEN ANORDNUNGEN MIT InAlAsSb/AlSb BARRIEREInfo
- Publication number
- DE69835204D1 DE69835204D1 DE69835204T DE69835204T DE69835204D1 DE 69835204 D1 DE69835204 D1 DE 69835204D1 DE 69835204 T DE69835204 T DE 69835204T DE 69835204 T DE69835204 T DE 69835204T DE 69835204 D1 DE69835204 D1 DE 69835204D1
- Authority
- DE
- Germany
- Prior art keywords
- inalassb
- manufacture
- design
- electronic arrangements
- alsb barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910017115 AlSb Inorganic materials 0.000 title 1
- 230000004888 barrier function Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/848,203 US5798540A (en) | 1997-04-29 | 1997-04-29 | Electronic devices with InAlAsSb/AlSb barrier |
US848203 | 1997-04-29 | ||
PCT/US1998/006030 WO1998049730A1 (en) | 1997-04-29 | 1998-03-26 | DESIGN AND FABRICATION OF ELECTRONIC DEVICES WITH InA1AsSb/A1Sb BARRIER |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69835204D1 true DE69835204D1 (de) | 2006-08-24 |
DE69835204T2 DE69835204T2 (de) | 2007-06-14 |
Family
ID=25302644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69835204T Expired - Fee Related DE69835204T2 (de) | 1997-04-29 | 1998-03-26 | ENTWURF UND HERSTELLUNG VON ELEKTRONISCHEN ANORDNUNGEN MIT InAlAsSb/AlSb BARRIERE |
Country Status (6)
Country | Link |
---|---|
US (1) | US5798540A (de) |
EP (1) | EP0979529B1 (de) |
JP (1) | JP2001522534A (de) |
KR (1) | KR100498207B1 (de) |
DE (1) | DE69835204T2 (de) |
WO (1) | WO1998049730A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6232624B1 (en) * | 1999-07-12 | 2001-05-15 | Hughes Electronics Corporation | InPSb channel HEMT on InP for RF application |
US6133593A (en) * | 1999-07-23 | 2000-10-17 | The United States Of America As Represented By The Secretary Of The Navy | Channel design to reduce impact ionization in heterostructure field-effect transistors |
US6624086B1 (en) * | 1999-09-15 | 2003-09-23 | Texas Instruments Incorporated | Effective solution and process to wet-etch metal-alloy films in semiconductor processing |
US6316124B1 (en) * | 2000-01-13 | 2001-11-13 | The United States Of America As Represented By The Secretary Of The Navy | Modified InAs hall elements |
DE10025833A1 (de) * | 2000-05-25 | 2001-11-29 | Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh | Halbleiterschichtsystem und Verfahren zur Herstellung von einem Halbleiterschichtsystem mit erhöhter Resistenz gegen thermische Prozessierung |
KR100466964B1 (ko) * | 2001-12-27 | 2005-01-24 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 박막 제조방법 |
US6825506B2 (en) * | 2002-11-27 | 2004-11-30 | Intel Corporation | Field effect transistor and method of fabrication |
US6703639B1 (en) * | 2002-12-17 | 2004-03-09 | The United States Of America As Represented By The Secretary Of The Navy | Nanofabrication for InAs/AlSb heterostructures |
NO324780B1 (no) * | 2002-12-27 | 2007-12-10 | Leiv Eiriksson Nyfotek As | Fremgangsmate for vatsyreetsing av AlGaInAsSb-strukturer og anvendelse av vatt, surt etsemiddel |
JP2004356570A (ja) * | 2003-05-30 | 2004-12-16 | Sony Corp | 電界効果型トランジスタ及び同電界効果型トランジスタを搭載した半導体装置 |
US7633083B2 (en) * | 2004-03-10 | 2009-12-15 | Stc.Unm | Metamorphic buffer on small lattice constant substrates |
US7388235B2 (en) * | 2004-09-30 | 2008-06-17 | The United States Of America As Represented By The Secretary Of The Navy | High electron mobility transistors with Sb-based channels |
JP4972896B2 (ja) * | 2005-09-14 | 2012-07-11 | 富士通株式会社 | 半導体装置 |
US8183556B2 (en) * | 2005-12-15 | 2012-05-22 | Intel Corporation | Extreme high mobility CMOS logic |
US7429747B2 (en) * | 2006-11-16 | 2008-09-30 | Intel Corporation | Sb-based CMOS devices |
US8421121B2 (en) * | 2007-04-18 | 2013-04-16 | Northrop Grumman Systems Corporation | Antimonide-based compound semiconductor with titanium tungsten stack |
US8159791B2 (en) * | 2008-02-06 | 2012-04-17 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor having quantum well structure and a trapping layer for preventing charge carrier migration |
US7687799B2 (en) * | 2008-06-19 | 2010-03-30 | Intel Corporation | Methods of forming buffer layer architecture on silicon and structures formed thereby |
US20100270547A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
US20100270592A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
US20100270591A1 (en) * | 2009-04-27 | 2010-10-28 | University Of Seoul Industry Cooperation Foundation | High-electron mobility transistor |
US8253145B2 (en) * | 2009-04-29 | 2012-08-28 | University Of Seoul Industry Cooperation Foundation | Semiconductor device having strong excitonic binding |
US8097999B2 (en) * | 2009-04-27 | 2012-01-17 | University Of Seoul Industry Cooperation Foundation | Piezoelectric actuator |
US20100276730A1 (en) * | 2009-04-29 | 2010-11-04 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
US20100327278A1 (en) * | 2009-06-29 | 2010-12-30 | University Of Seoul Industry Cooperation Foundation | Laminated structures |
US8735903B2 (en) * | 2010-02-10 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Density of states engineered field effect transistor |
JP5653326B2 (ja) * | 2011-09-12 | 2015-01-14 | 株式会社東芝 | 窒化物半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU784635A1 (ru) * | 1979-07-20 | 1982-01-30 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Травитель дл химического полировани антимонидов инди и галли |
JPS57187940A (en) * | 1981-05-15 | 1982-11-18 | Toshiba Corp | Surface treatment of compound semiconductor |
SU1135382A1 (ru) * | 1983-02-25 | 1986-10-15 | Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср | Травитель дл прецизионного химического полировани монокристаллов антимонида гали и твердых растворов на его основе |
EP0133342B1 (de) * | 1983-06-24 | 1989-11-29 | Nec Corporation | Halbleiterstruktur mit Übergitter hoher Trägerdichte |
JP2703892B2 (ja) * | 1986-12-08 | 1998-01-26 | 日本電気株式会社 | 電界効果素子 |
EP0531550B1 (de) * | 1991-03-28 | 1997-12-29 | Asahi Kasei Kogyo Kabushiki Kaisha | Feldeffekttransistor |
US5453627A (en) * | 1992-05-14 | 1995-09-26 | Nippon Telegraph And Telephone Corporation | Quantum interference device and complementary logic circuit utilizing thereof |
US5364816A (en) * | 1993-01-29 | 1994-11-15 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication method for III-V heterostructure field-effect transistors |
-
1997
- 1997-04-29 US US08/848,203 patent/US5798540A/en not_active Expired - Lifetime
-
1998
- 1998-03-26 DE DE69835204T patent/DE69835204T2/de not_active Expired - Fee Related
- 1998-03-26 WO PCT/US1998/006030 patent/WO1998049730A1/en active IP Right Grant
- 1998-03-26 EP EP98913176A patent/EP0979529B1/de not_active Expired - Lifetime
- 1998-03-26 KR KR10-1999-7010054A patent/KR100498207B1/ko not_active IP Right Cessation
- 1998-03-26 JP JP54698598A patent/JP2001522534A/ja not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
JP2001522534A (ja) | 2001-11-13 |
WO1998049730A1 (en) | 1998-11-05 |
DE69835204T2 (de) | 2007-06-14 |
EP0979529B1 (de) | 2006-07-12 |
KR20010020429A (ko) | 2001-03-15 |
US5798540A (en) | 1998-08-25 |
EP0979529A1 (de) | 2000-02-16 |
EP0979529A4 (de) | 2000-09-20 |
KR100498207B1 (ko) | 2005-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |