DE69835204D1 - ENTWURF UND HERSTELLUNG VON ELEKTRONISCHEN ANORDNUNGEN MIT InAlAsSb/AlSb BARRIERE - Google Patents

ENTWURF UND HERSTELLUNG VON ELEKTRONISCHEN ANORDNUNGEN MIT InAlAsSb/AlSb BARRIERE

Info

Publication number
DE69835204D1
DE69835204D1 DE69835204T DE69835204T DE69835204D1 DE 69835204 D1 DE69835204 D1 DE 69835204D1 DE 69835204 T DE69835204 T DE 69835204T DE 69835204 T DE69835204 T DE 69835204T DE 69835204 D1 DE69835204 D1 DE 69835204D1
Authority
DE
Germany
Prior art keywords
inalassb
manufacture
design
electronic arrangements
alsb barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69835204T
Other languages
English (en)
Other versions
DE69835204T2 (de
Inventor
Bradley Boos
Walter Kruppa
Daewon Park
R Bennett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Department of Navy
Original Assignee
US Department of Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Department of Navy filed Critical US Department of Navy
Publication of DE69835204D1 publication Critical patent/DE69835204D1/de
Application granted granted Critical
Publication of DE69835204T2 publication Critical patent/DE69835204T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69835204T 1997-04-29 1998-03-26 ENTWURF UND HERSTELLUNG VON ELEKTRONISCHEN ANORDNUNGEN MIT InAlAsSb/AlSb BARRIERE Expired - Fee Related DE69835204T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/848,203 US5798540A (en) 1997-04-29 1997-04-29 Electronic devices with InAlAsSb/AlSb barrier
US848203 1997-04-29
PCT/US1998/006030 WO1998049730A1 (en) 1997-04-29 1998-03-26 DESIGN AND FABRICATION OF ELECTRONIC DEVICES WITH InA1AsSb/A1Sb BARRIER

Publications (2)

Publication Number Publication Date
DE69835204D1 true DE69835204D1 (de) 2006-08-24
DE69835204T2 DE69835204T2 (de) 2007-06-14

Family

ID=25302644

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69835204T Expired - Fee Related DE69835204T2 (de) 1997-04-29 1998-03-26 ENTWURF UND HERSTELLUNG VON ELEKTRONISCHEN ANORDNUNGEN MIT InAlAsSb/AlSb BARRIERE

Country Status (6)

Country Link
US (1) US5798540A (de)
EP (1) EP0979529B1 (de)
JP (1) JP2001522534A (de)
KR (1) KR100498207B1 (de)
DE (1) DE69835204T2 (de)
WO (1) WO1998049730A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232624B1 (en) * 1999-07-12 2001-05-15 Hughes Electronics Corporation InPSb channel HEMT on InP for RF application
US6133593A (en) * 1999-07-23 2000-10-17 The United States Of America As Represented By The Secretary Of The Navy Channel design to reduce impact ionization in heterostructure field-effect transistors
US6624086B1 (en) * 1999-09-15 2003-09-23 Texas Instruments Incorporated Effective solution and process to wet-etch metal-alloy films in semiconductor processing
US6316124B1 (en) * 2000-01-13 2001-11-13 The United States Of America As Represented By The Secretary Of The Navy Modified InAs hall elements
DE10025833A1 (de) * 2000-05-25 2001-11-29 Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh Halbleiterschichtsystem und Verfahren zur Herstellung von einem Halbleiterschichtsystem mit erhöhter Resistenz gegen thermische Prozessierung
KR100466964B1 (ko) * 2001-12-27 2005-01-24 엘지.필립스 엘시디 주식회사 폴리실리콘 박막 제조방법
US6825506B2 (en) * 2002-11-27 2004-11-30 Intel Corporation Field effect transistor and method of fabrication
US6703639B1 (en) * 2002-12-17 2004-03-09 The United States Of America As Represented By The Secretary Of The Navy Nanofabrication for InAs/AlSb heterostructures
NO324780B1 (no) * 2002-12-27 2007-12-10 Leiv Eiriksson Nyfotek As Fremgangsmate for vatsyreetsing av AlGaInAsSb-strukturer og anvendelse av vatt, surt etsemiddel
JP2004356570A (ja) * 2003-05-30 2004-12-16 Sony Corp 電界効果型トランジスタ及び同電界効果型トランジスタを搭載した半導体装置
US7633083B2 (en) * 2004-03-10 2009-12-15 Stc.Unm Metamorphic buffer on small lattice constant substrates
US7388235B2 (en) * 2004-09-30 2008-06-17 The United States Of America As Represented By The Secretary Of The Navy High electron mobility transistors with Sb-based channels
JP4972896B2 (ja) * 2005-09-14 2012-07-11 富士通株式会社 半導体装置
US8183556B2 (en) * 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US7429747B2 (en) * 2006-11-16 2008-09-30 Intel Corporation Sb-based CMOS devices
US8421121B2 (en) * 2007-04-18 2013-04-16 Northrop Grumman Systems Corporation Antimonide-based compound semiconductor with titanium tungsten stack
US8159791B2 (en) * 2008-02-06 2012-04-17 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor having quantum well structure and a trapping layer for preventing charge carrier migration
US7687799B2 (en) * 2008-06-19 2010-03-30 Intel Corporation Methods of forming buffer layer architecture on silicon and structures formed thereby
US20100270547A1 (en) * 2009-04-27 2010-10-28 University Of Seoul Industry Cooperation Foundation Semiconductor device
US20100270592A1 (en) * 2009-04-27 2010-10-28 University Of Seoul Industry Cooperation Foundation Semiconductor device
US20100270591A1 (en) * 2009-04-27 2010-10-28 University Of Seoul Industry Cooperation Foundation High-electron mobility transistor
US8253145B2 (en) * 2009-04-29 2012-08-28 University Of Seoul Industry Cooperation Foundation Semiconductor device having strong excitonic binding
US8097999B2 (en) * 2009-04-27 2012-01-17 University Of Seoul Industry Cooperation Foundation Piezoelectric actuator
US20100276730A1 (en) * 2009-04-29 2010-11-04 University Of Seoul Industry Cooperation Foundation Semiconductor device
US20100327278A1 (en) * 2009-06-29 2010-12-30 University Of Seoul Industry Cooperation Foundation Laminated structures
US8735903B2 (en) * 2010-02-10 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Density of states engineered field effect transistor
JP5653326B2 (ja) * 2011-09-12 2015-01-14 株式会社東芝 窒化物半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU784635A1 (ru) * 1979-07-20 1982-01-30 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Травитель дл химического полировани антимонидов инди и галли
JPS57187940A (en) * 1981-05-15 1982-11-18 Toshiba Corp Surface treatment of compound semiconductor
SU1135382A1 (ru) * 1983-02-25 1986-10-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Травитель дл прецизионного химического полировани монокристаллов антимонида гали и твердых растворов на его основе
EP0133342B1 (de) * 1983-06-24 1989-11-29 Nec Corporation Halbleiterstruktur mit Übergitter hoher Trägerdichte
JP2703892B2 (ja) * 1986-12-08 1998-01-26 日本電気株式会社 電界効果素子
EP0531550B1 (de) * 1991-03-28 1997-12-29 Asahi Kasei Kogyo Kabushiki Kaisha Feldeffekttransistor
US5453627A (en) * 1992-05-14 1995-09-26 Nippon Telegraph And Telephone Corporation Quantum interference device and complementary logic circuit utilizing thereof
US5364816A (en) * 1993-01-29 1994-11-15 The United States Of America As Represented By The Secretary Of The Navy Fabrication method for III-V heterostructure field-effect transistors

Also Published As

Publication number Publication date
JP2001522534A (ja) 2001-11-13
WO1998049730A1 (en) 1998-11-05
DE69835204T2 (de) 2007-06-14
EP0979529B1 (de) 2006-07-12
KR20010020429A (ko) 2001-03-15
US5798540A (en) 1998-08-25
EP0979529A1 (de) 2000-02-16
EP0979529A4 (de) 2000-09-20
KR100498207B1 (ko) 2005-07-01

Similar Documents

Publication Publication Date Title
DE69835204D1 (de) ENTWURF UND HERSTELLUNG VON ELEKTRONISCHEN ANORDNUNGEN MIT InAlAsSb/AlSb BARRIERE
DE69715778D1 (de) Harzzusammensetzung und Mehrschichtstruktur
DE69532924D1 (de) Elektrochromische schicht und vorrichtungen mit derselben
EE9700209A (et) Dihüdropürimidiinid ja nende kasutamine
MA26612A1 (fr) Pyrazolopyrimidines et pyrazolotriazines
GB9711467D0 (en) FGPA with hierarchical inter-connect structure and hyperlinks
DE69817242D1 (de) Flutbeschichtungslösung und damit hergestellte Schichten von Schmelzfixierelementen
ID22956A (id) Sintesa disulfida dan polisulfida organik
DE59400663D1 (de) Langzeitstabile Elektrode und daraus gebildeter Doppelschichtkondensator
DE69817432D1 (de) Cycloolefinpolymere und deren Verwendung
LV12624B (lv) Tienilazolilalkosietanamini to iegusanas panemiens un pielietojums medikamentu legusana
DE59504840D1 (de) Spannungsreferenz mit prüfung und eigenkalibrierung
DE69623590D1 (de) Schlauch mit befestigter schicht und verbindungsstruktur dafür
DE69505267D1 (de) Haftvermittler und adhäsionsfähige arylcyclobutanharzzusammensetzung
DE69933757D1 (de) Wärmehärtende zusammensetzung enthaltend polyhemiacetal-esterharz und wärmeharterende pulverförmige zusammensetzung
DE69615412D1 (de) Metallischer gegenstand mit oxidschicht und eine verbesserte haftschicht
DE19780849D2 (de) Schalungselement und Wandaufbau mit solchen Schalungselementen
DE69738269D1 (de) Fluorcopolymer und daraus hergestellter film
DE69816046D1 (de) Zusammensetzung auf basis von hexanitrohexaazaisowurtizitan und hexanitrohexaazaisowurtizitan enthaltende sprengstoffzusammensetzung
DE69524590D1 (de) Zusammensetzung von 5htida und 5htid antagonisten
DE69629563D1 (de) Bestimmung der funktion von calcineurin in immunosuppression und neurotoxizität
DE59712043D1 (de) Leiterfolie zur leitenden verbindung von elektrischen und/oder elektronischen baukomponenten
ID24065A (id) Pengobatan diabetes dengan tiozolidindinon dan sulfonilurea
DE69706322D1 (de) Mischung von verzweigten und linearen polycarbonatharzen
DE59911331D1 (de) System mit integrierter schaltung und spannungsquellen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee