DE69808576D1 - Elektronischer Hochfrequenzschalter - Google Patents

Elektronischer Hochfrequenzschalter

Info

Publication number
DE69808576D1
DE69808576D1 DE69808576T DE69808576T DE69808576D1 DE 69808576 D1 DE69808576 D1 DE 69808576D1 DE 69808576 T DE69808576 T DE 69808576T DE 69808576 T DE69808576 T DE 69808576T DE 69808576 D1 DE69808576 D1 DE 69808576D1
Authority
DE
Germany
Prior art keywords
high frequency
frequency switch
electronic high
electronic
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69808576T
Other languages
English (en)
Other versions
DE69808576T2 (de
Inventor
Hisanori Uda
Keiichi Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of DE69808576D1 publication Critical patent/DE69808576D1/de
Application granted granted Critical
Publication of DE69808576T2 publication Critical patent/DE69808576T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/38—One-way transmission networks, i.e. unilines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
DE69808576T 1997-02-24 1998-02-23 Elektronischer Hochfrequenzschalter Expired - Fee Related DE69808576T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9039598A JPH10242829A (ja) 1997-02-24 1997-02-24 スイッチ回路装置

Publications (2)

Publication Number Publication Date
DE69808576D1 true DE69808576D1 (de) 2002-11-14
DE69808576T2 DE69808576T2 (de) 2003-06-18

Family

ID=12557560

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69808576T Expired - Fee Related DE69808576T2 (de) 1997-02-24 1998-02-23 Elektronischer Hochfrequenzschalter

Country Status (4)

Country Link
US (1) US5945867A (de)
EP (1) EP0903855B1 (de)
JP (1) JPH10242829A (de)
DE (1) DE69808576T2 (de)

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US6218890B1 (en) 1998-07-14 2001-04-17 Sanyo Electric Co., Ltd. Switching circuit device and semiconductor device
US6840995B2 (en) * 1999-07-14 2005-01-11 Calcitec, Inc. Process for producing fast-setting, bioresorbable calcium phosphate cements
JP3736356B2 (ja) * 2001-02-01 2006-01-18 日本電気株式会社 高周波スイッチ回路
JP2002289790A (ja) * 2001-03-27 2002-10-04 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
US6897704B2 (en) * 2001-05-25 2005-05-24 Thunder Creative Technologies, Inc. Electronic isolator
US7796969B2 (en) 2001-10-10 2010-09-14 Peregrine Semiconductor Corporation Symmetrically and asymmetrically stacked transistor group RF switch
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7613442B1 (en) 2001-10-10 2009-11-03 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
JP3813869B2 (ja) 2001-12-20 2006-08-23 松下電器産業株式会社 電界効果トランジスタスイッチ回路
JP4009553B2 (ja) 2002-05-17 2007-11-14 日本電気株式会社 高周波スイッチ回路
JP4262933B2 (ja) 2002-05-30 2009-05-13 Ｎｅｃエレクトロニクス株式会社 高周波回路素子
US6900711B2 (en) 2002-09-30 2005-05-31 Agilent Technologies, Inc. Switching system
JP3902111B2 (ja) * 2002-10-21 2007-04-04 新日本無線株式会社 スイッチ半導体集積回路
JP2005006072A (ja) 2003-06-12 2005-01-06 Matsushita Electric Ind Co Ltd 高周波スイッチ装置および半導体装置
JP2005006143A (ja) * 2003-06-13 2005-01-06 Matsushita Electric Ind Co Ltd 高周波スイッチ回路および半導体装置
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
US7221207B2 (en) * 2004-06-04 2007-05-22 Matsushita Electric Industrial Co., Ltd. Semiconductor switching circuit for switching the paths of a high frequency signal in a mobile communications unit
EP3570374B1 (de) 2004-06-23 2022-04-20 pSemi Corporation Integriertes hf-frontend
US7619462B2 (en) 2005-02-09 2009-11-17 Peregrine Semiconductor Corporation Unpowered switch and bleeder circuit
JP2006304013A (ja) * 2005-04-21 2006-11-02 Matsushita Electric Ind Co Ltd スイッチ回路
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
JP4538016B2 (ja) * 2007-03-23 2010-09-08 パナソニック株式会社 高周波スイッチ装置および半導体装置
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
EP2255443B1 (de) 2008-02-28 2012-11-28 Peregrine Semiconductor Corporation Verfahren und vorrichtung für digitale abstimmung eines kondensators bei einer integrierten schaltung
US9030248B2 (en) 2008-07-18 2015-05-12 Peregrine Semiconductor Corporation Level shifter with output spike reduction
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
JP2011528870A (ja) 2008-07-18 2011-11-24 ペレグリン セミコンダクター コーポレーション 低ノイズ高効率バイアス生成回路及び方法
JP5237842B2 (ja) * 2009-01-29 2013-07-17 ルネサスエレクトロニクス株式会社 半導体装置
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8451044B2 (en) * 2009-06-29 2013-05-28 Sige Semiconductor, Inc. Switching circuit
JP2011193191A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
US9264053B2 (en) 2011-01-18 2016-02-16 Peregrine Semiconductor Corporation Variable frequency charge pump
US9124265B2 (en) * 2011-07-13 2015-09-01 Peregrine Semiconductor Corporation Method and apparatus for transistor switch isolation
US8829967B2 (en) 2012-06-27 2014-09-09 Triquint Semiconductor, Inc. Body-contacted partially depleted silicon on insulator transistor
US8729952B2 (en) 2012-08-16 2014-05-20 Triquint Semiconductor, Inc. Switching device with non-negative biasing
US9312820B2 (en) 2012-09-23 2016-04-12 Dsp Group Ltd. CMOS based TX/RX switch
US9374086B2 (en) * 2012-11-09 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Switch circuit and method of operating the switch circuit
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US8847672B2 (en) 2013-01-15 2014-09-30 Triquint Semiconductor, Inc. Switching device with resistive divider
US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US8977217B1 (en) 2013-02-20 2015-03-10 Triquint Semiconductor, Inc. Switching device with negative bias circuit
US8923782B1 (en) 2013-02-20 2014-12-30 Triquint Semiconductor, Inc. Switching device with diode-biased field-effect transistor (FET)
US9203396B1 (en) 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9379698B2 (en) 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
JP2016174240A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体スイッチ
US9705482B1 (en) 2016-06-24 2017-07-11 Peregrine Semiconductor Corporation High voltage input buffer
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10656108B2 (en) * 2017-12-22 2020-05-19 Saudi Arabian Oil Company Measuring source rock potential using a quantum electronic scanner
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081706A (en) * 1987-07-30 1992-01-14 Texas Instruments Incorporated Broadband merged switch
US4939485A (en) * 1988-12-09 1990-07-03 Varian Associates, Inc. Microwave field effect switch
US5061911A (en) * 1990-04-03 1991-10-29 Motorola, Inc. Single fault/tolerant MMIC switches
JPH0435501A (ja) * 1990-05-31 1992-02-06 Fujitsu Ltd スイッチ回路
US5272457A (en) * 1992-03-10 1993-12-21 Harris Corporation High isolation integrated switch circuit
US5477184A (en) * 1992-04-15 1995-12-19 Sanyo Electric Co., Ltd. Fet switching circuit for switching between a high power transmitting signal and a lower power receiving signal
JPH06112795A (ja) * 1992-07-31 1994-04-22 Hewlett Packard Co <Hp> 信号切換回路および信号生成回路
JPH08139014A (ja) * 1994-11-10 1996-05-31 Sanyo Electric Co Ltd スイッチ回路装置
US5856713A (en) * 1997-10-24 1999-01-05 Raytheon Company N-way MMIC switch

Also Published As

Publication number Publication date
JPH10242829A (ja) 1998-09-11
EP0903855A1 (de) 1999-03-24
EP0903855B1 (de) 2002-10-09
DE69808576T2 (de) 2003-06-18
US5945867A (en) 1999-08-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee