DE69807882D1 - Lichtemittierende vorrichtung und transistor - Google Patents

Lichtemittierende vorrichtung und transistor

Info

Publication number
DE69807882D1
DE69807882D1 DE69807882T DE69807882T DE69807882D1 DE 69807882 D1 DE69807882 D1 DE 69807882D1 DE 69807882 T DE69807882 T DE 69807882T DE 69807882 T DE69807882 T DE 69807882T DE 69807882 D1 DE69807882 D1 DE 69807882D1
Authority
DE
Germany
Prior art keywords
transistor
light
emitting device
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69807882T
Other languages
English (en)
Other versions
DE69807882T2 (de
Inventor
Barry Allenson
Gerard Aying
Robert Wight
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of DE69807882D1 publication Critical patent/DE69807882D1/de
Application granted granted Critical
Publication of DE69807882T2 publication Critical patent/DE69807882T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/322—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures type-II junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G01B9/02091—Tomographic interferometers, e.g. based on optical coherence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69807882T 1997-06-25 1998-06-17 Lichtemittierende vorrichtung und transistor Expired - Lifetime DE69807882T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9713365.6A GB9713365D0 (en) 1997-06-25 1997-06-25 A laser device and transistor
PCT/GB1998/001775 WO1999000881A1 (en) 1997-06-25 1998-06-17 A light emitting device and transistor

Publications (2)

Publication Number Publication Date
DE69807882D1 true DE69807882D1 (de) 2002-10-17
DE69807882T2 DE69807882T2 (de) 2003-05-28

Family

ID=10814875

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69807882T Expired - Lifetime DE69807882T2 (de) 1997-06-25 1998-06-17 Lichtemittierende vorrichtung und transistor

Country Status (7)

Country Link
US (1) US6829278B1 (de)
EP (1) EP0992094B1 (de)
JP (1) JP4414491B2 (de)
KR (1) KR100563865B1 (de)
DE (1) DE69807882T2 (de)
GB (2) GB9713365D0 (de)
WO (1) WO1999000881A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7177340B2 (en) * 2002-11-05 2007-02-13 Jds Uniphase Corporation Extended cavity laser device with bulk transmission grating
JP5217787B2 (ja) * 2008-08-27 2013-06-19 日亜化学工業株式会社 半導体発光素子
US7888625B2 (en) * 2008-09-25 2011-02-15 The Board Of Trustees Of The University Of Illinois Method and apparatus for producing linearized optical signals with a light-emitting transistor
GB201000756D0 (en) 2010-01-18 2010-03-03 Gas Sensing Solutions Ltd Gas sensor with radiation guide
GB201018417D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Apparatus and method for generating light pulses from LEDs in optical absorption gas sensors
GB201018418D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated
WO2015011984A1 (ja) * 2013-07-22 2015-01-29 株式会社村田製作所 垂直共振面発光レーザアレイおよびその製造方法
JP2016054295A (ja) * 2014-09-01 2016-04-14 三菱電機株式会社 波長結合外部共振器型レーザ装置
RU2587534C1 (ru) * 2014-12-08 2016-06-20 федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Дагестанский государственный технический университет" Экономичный световой транзистор
RU2673424C1 (ru) * 2018-02-06 2018-11-26 Ооо "Центральный Научно-Исследовательский Институт "Апертура" Фотоприемное устройство на каскадных транзисторах со светоизлучающими p-n-переходами и фоточувствительными n-p-переходами
CN112385100B (zh) 2018-05-14 2024-06-25 通快光子学公司 低电流、高功率激光二极管条
CN113140966B (zh) * 2021-03-09 2023-05-09 深圳瑞波光电子有限公司 一种半导体激光器巴条及其制造方法、电子设备
US11876343B2 (en) 2021-05-18 2024-01-16 Trumpf Photonics, Inc. Laser diode packaging platforms
US11557874B2 (en) 2021-05-18 2023-01-17 Trumpf Photonics, Inc. Double-sided cooling of laser diodes

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4212023A (en) * 1978-11-30 1980-07-08 General Electric Company Bilateral phototransistor
US4278515A (en) * 1979-10-15 1981-07-14 The United States Of America As Represented By The Secretary Of The Army Method for removal of sodium carbonate from cyanide plating baths
JPS5916453B2 (ja) * 1981-12-03 1984-04-16 株式会社リコー 光デ−タ通信システム
JPS59163927A (ja) * 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd 光通信伝送システム
JPS62146024A (ja) * 1985-12-20 1987-06-30 Sumitomo Electric Ind Ltd 光通信方式
US4928285A (en) * 1988-02-23 1990-05-22 Kabushiki Kaisha Toshiba Impurity-doped semiconductor laser device for single wavelength oscillation
JPH02244834A (ja) * 1989-03-16 1990-09-28 Fujitsu Ltd 光信号受信装置の試験方法
US5130531A (en) * 1989-06-09 1992-07-14 Omron Corporation Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens
US5317440A (en) * 1990-05-21 1994-05-31 Hughes Aircraft Company Single wavelength bidirectional optical fiber communication link
US5440577A (en) * 1991-02-13 1995-08-08 The University Of Melbourne Semiconductor laser
AU636792B2 (en) * 1991-02-13 1993-05-06 University Of Melbourne, The Semiconductor laser
US5278515A (en) 1992-12-24 1994-01-11 Uniphase Corporation High bandwidth information channel with optocoupling isolation
SE501721C2 (sv) * 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laseranordning med i en optisk kavitet seriekopplade laserstrukturer
US5834763A (en) * 1994-09-14 1998-11-10 Edwards; Paul Julian Low noise photon coupled circuit
US5799029A (en) * 1996-05-14 1998-08-25 Sdl, Inc. Laser system with reduced power fluctuations for employment in applications requiring continuous stable light intensity delivery

Also Published As

Publication number Publication date
KR100563865B1 (ko) 2006-03-27
US6829278B1 (en) 2004-12-07
GB2341976A (en) 2000-03-29
GB2341976B (en) 2002-04-17
EP0992094B1 (de) 2002-09-11
KR20010014252A (ko) 2001-02-26
EP0992094A1 (de) 2000-04-12
GB9713365D0 (en) 1997-08-27
GB9930009D0 (en) 2000-02-09
DE69807882T2 (de) 2003-05-28
JP2002507324A (ja) 2002-03-05
JP4414491B2 (ja) 2010-02-10
WO1999000881A1 (en) 1999-01-07

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