DE69739711D1 - Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung - Google Patents

Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung

Info

Publication number
DE69739711D1
DE69739711D1 DE69739711T DE69739711T DE69739711D1 DE 69739711 D1 DE69739711 D1 DE 69739711D1 DE 69739711 T DE69739711 T DE 69739711T DE 69739711 T DE69739711 T DE 69739711T DE 69739711 D1 DE69739711 D1 DE 69739711D1
Authority
DE
Germany
Prior art keywords
manufacturing
electronic device
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739711T
Other languages
English (en)
Inventor
Shunsuke Kugo
Hideo Nikoh
Tomoyuki Sasaki
Hideo Ichimura
Daihei Kajiwara
Shoji Matsumoto
Satoshi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE69739711D1 publication Critical patent/DE69739711D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE69739711T 1996-10-02 1997-10-02 Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung Expired - Lifetime DE69739711D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26211996 1996-10-02

Publications (1)

Publication Number Publication Date
DE69739711D1 true DE69739711D1 (de) 2010-02-04

Family

ID=17371321

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739711T Expired - Lifetime DE69739711D1 (de) 1996-10-02 1997-10-02 Gerät und Verfahren zur Herstellung einer elektronischen Vorrichtung

Country Status (5)

Country Link
US (1) US6007673A (de)
EP (1) EP0838838B1 (de)
KR (1) KR100432391B1 (de)
DE (1) DE69739711D1 (de)
TW (1) TW369676B (de)

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US6165276A (en) * 1999-09-17 2000-12-26 United Microelectronics Corp. Apparatus for preventing plasma etching of a wafer clamp in semiconductor fabrication processes
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US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
US6623595B1 (en) * 2000-03-27 2003-09-23 Applied Materials, Inc. Wavy and roughened dome in plasma processing reactor
DE60128302T2 (de) * 2000-08-29 2008-01-24 Heraeus Quarzglas Gmbh & Co. Kg Plasmafeste Quartzglas-Haltevorrichtung
US6777045B2 (en) * 2001-06-27 2004-08-17 Applied Materials Inc. Chamber components having textured surfaces and method of manufacture
US20030047464A1 (en) * 2001-07-27 2003-03-13 Applied Materials, Inc. Electrochemically roughened aluminum semiconductor processing apparatus surfaces
US7964085B1 (en) 2002-11-25 2011-06-21 Applied Materials, Inc. Electrochemical removal of tantalum-containing materials
US20040129221A1 (en) * 2003-01-08 2004-07-08 Jozef Brcka Cooled deposition baffle in high density plasma semiconductor processing
US7059269B2 (en) * 2003-02-13 2006-06-13 Steris, Inc. Pulsed electric field system for decontamination of biological agents on a dielectric sheet material
US8372205B2 (en) * 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
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US20050178331A1 (en) * 2004-02-13 2005-08-18 Fourtner Lawrence C. Electrode assembly and method for producing an electrode plate
WO2005104203A1 (ja) * 2004-03-31 2005-11-03 Fujitsu Limited 基板処理装置および半導体装置の製造方法
CN1984523B (zh) * 2004-06-21 2014-06-11 东京毅力科创株式会社 等离子体处理装置和方法
CN100440452C (zh) * 2004-07-20 2008-12-03 夏普株式会社 等离子体处理装置
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7579067B2 (en) 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
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US20070125646A1 (en) 2005-11-25 2007-06-07 Applied Materials, Inc. Sputtering target for titanium sputtering chamber
US8173228B2 (en) * 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
WO2007088904A1 (ja) * 2006-01-31 2007-08-09 Tokyo Electron Limited マイクロ波プラズマ処理装置
KR100855107B1 (ko) * 2006-02-27 2008-08-29 주식회사 엘지화학 초박형 반투과 반사용 아크로매틱 1/4 파장 위상차 필름적층체 및 그 제조방법
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JP5453768B2 (ja) * 2008-11-05 2014-03-26 豊田合成株式会社 化合物半導体製造装置、化合物半導体の製造方法、および化合物半導体製造用治具
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
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JP6362670B2 (ja) * 2013-03-15 2018-07-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ポリマーを管理することによるエッチングシステムの生産性の向上
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
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CN109786194B (zh) * 2018-12-20 2020-10-30 丰豹智能科技(上海)有限公司 一种改变离子束方向的装置
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Also Published As

Publication number Publication date
US6007673A (en) 1999-12-28
KR19980032528A (ko) 1998-07-25
EP0838838A3 (de) 1999-04-14
EP0838838A2 (de) 1998-04-29
EP0838838B1 (de) 2009-12-23
TW369676B (en) 1999-09-11
KR100432391B1 (ko) 2004-07-16

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