DE69738780D1 - Zweifarbiger infrarotdetektor mit räumlich-zeitlicher kohärenz - Google Patents

Zweifarbiger infrarotdetektor mit räumlich-zeitlicher kohärenz

Info

Publication number
DE69738780D1
DE69738780D1 DE69738780T DE69738780T DE69738780D1 DE 69738780 D1 DE69738780 D1 DE 69738780D1 DE 69738780 T DE69738780 T DE 69738780T DE 69738780 T DE69738780 T DE 69738780T DE 69738780 D1 DE69738780 D1 DE 69738780D1
Authority
DE
Germany
Prior art keywords
spatial
infrared detector
time coherence
tone
tone infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738780T
Other languages
English (en)
Inventor
Jean-Paul Zanatta
Pierre Ferret
Philippe Duvaut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69738780D1 publication Critical patent/DE69738780D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69738780T 1997-04-29 1997-04-29 Zweifarbiger infrarotdetektor mit räumlich-zeitlicher kohärenz Expired - Lifetime DE69738780D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FR1997/000760 WO1998049734A1 (fr) 1997-04-29 1997-04-29 Detecteur infrarouge bicolore a coherence spatio-temporelle planaire

Publications (1)

Publication Number Publication Date
DE69738780D1 true DE69738780D1 (de) 2008-07-31

Family

ID=9502942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738780T Expired - Lifetime DE69738780D1 (de) 1997-04-29 1997-04-29 Zweifarbiger infrarotdetektor mit räumlich-zeitlicher kohärenz

Country Status (4)

Country Link
US (1) US6180967B1 (de)
EP (1) EP0913002B1 (de)
DE (1) DE69738780D1 (de)
WO (1) WO1998049734A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6875975B2 (en) * 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
DE10037103A1 (de) 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
US20030102432A1 (en) * 2001-04-12 2003-06-05 Epir Ltd. Monolithic infrared focal plane array detectors
US6657194B2 (en) * 2001-04-13 2003-12-02 Epir Technologies, Inc. Multispectral monolithic infrared focal plane array detectors
WO2007030720A1 (en) * 2005-09-11 2007-03-15 Illinois Tool Works Inc. Welding torch having nozzle assembly with independently removable components
GB0712618D0 (en) * 2007-06-29 2007-08-08 Durham Scient Crystals Ltd Semiconductor device structure and method of manufacture thereof
US20090146179A1 (en) * 2007-12-11 2009-06-11 Young-Kai Chen Planar arrays of photodiodes
KR100997329B1 (ko) * 2008-07-29 2010-11-29 주식회사 동부하이텍 이미지센서 및 그 제조방법
GB0921053D0 (en) 2009-12-01 2010-01-13 Selex Sensors & Airborne Sys Infra red detectors and methods of manufacture
US10903261B1 (en) 2013-03-15 2021-01-26 Hrl Laboratories, Llc Triple output, dual-band detector
CN106024818B (zh) * 2016-05-24 2019-06-18 苏州智权电子科技有限公司 一种红外图像传感器及其制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004698A (en) * 1985-12-05 1991-04-02 Santa Barbara Research Center Method of making photodetector with P layer covered by N layer
US4956686A (en) * 1986-02-04 1990-09-11 Texas Instruments Incorporated Two color infrared focal plane array
US4956304A (en) * 1988-04-07 1990-09-11 Santa Barbara Research Center Buried junction infrared photodetector process
US4910154A (en) 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
US4965649A (en) * 1988-12-23 1990-10-23 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
FR2646558B1 (fr) 1989-04-26 1994-04-01 Commissariat A Energie Atomique Procede et machine d'interconnexion de composants electriques par elements de soudure
US5113076A (en) 1989-12-19 1992-05-12 Santa Barbara Research Center Two terminal multi-band infrared radiation detector
GB2247985A (en) * 1990-09-12 1992-03-18 Philips Electronic Associated Plural-wavelength infrared detector devices
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
JPH0714996A (ja) 1993-06-18 1995-01-17 Mitsubishi Electric Corp 赤外線検出器とその製造方法
US6030853A (en) * 1993-08-13 2000-02-29 Drs Fpa, L.P. Method of producing intrinsic p-type HgCdTe using CdTe capping layer
US5360987A (en) 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
JPH1041488A (ja) * 1996-07-19 1998-02-13 Nec Corp 回路内蔵受光素子
KR100253660B1 (ko) * 1997-09-13 2000-04-15 최동환 이색 적외선 검출소자의 구조 및 제조방법

Also Published As

Publication number Publication date
EP0913002A1 (de) 1999-05-06
EP0913002B1 (de) 2008-06-18
US6180967B1 (en) 2001-01-30
WO1998049734A1 (fr) 1998-11-05

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Legal Events

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