DE69732254D1 - Abstimmbarer diodenlaser mit externem resonator - Google Patents

Abstimmbarer diodenlaser mit externem resonator

Info

Publication number
DE69732254D1
DE69732254D1 DE69732254T DE69732254T DE69732254D1 DE 69732254 D1 DE69732254 D1 DE 69732254D1 DE 69732254 T DE69732254 T DE 69732254T DE 69732254 T DE69732254 T DE 69732254T DE 69732254 D1 DE69732254 D1 DE 69732254D1
Authority
DE
Germany
Prior art keywords
diode laser
external resonator
tunable diode
tunable
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69732254T
Other languages
English (en)
Other versions
DE69732254T2 (de
Inventor
Chandra Roychoudhuri
H Tracy
J Hubbard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Connecticut
Applied Biosystems Inc
Original Assignee
University of Connecticut
PE Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Connecticut, PE Corp filed Critical University of Connecticut
Application granted granted Critical
Publication of DE69732254D1 publication Critical patent/DE69732254D1/de
Publication of DE69732254T2 publication Critical patent/DE69732254T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06812—Stabilisation of laser output parameters by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69732254T 1996-07-26 1997-07-28 Abstimmbarer diodenlaser mit externem resonator Expired - Lifetime DE69732254T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US2281996P 1996-07-26 1996-07-26
US22819P 1996-07-26
PCT/US1997/013152 WO1998005105A1 (en) 1996-07-26 1997-07-28 Tunable external cavity diode laser

Publications (2)

Publication Number Publication Date
DE69732254D1 true DE69732254D1 (de) 2005-02-17
DE69732254T2 DE69732254T2 (de) 2006-01-12

Family

ID=21811609

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69732254T Expired - Lifetime DE69732254T2 (de) 1996-07-26 1997-07-28 Abstimmbarer diodenlaser mit externem resonator

Country Status (7)

Country Link
US (1) US6438147B1 (de)
EP (1) EP0979547B1 (de)
JP (1) JP2000516040A (de)
AU (1) AU729110B2 (de)
CA (1) CA2261036C (de)
DE (1) DE69732254T2 (de)
WO (1) WO1998005105A1 (de)

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US6879619B1 (en) * 1999-07-27 2005-04-12 Intel Corporation Method and apparatus for filtering an optical beam
GB2353396B (en) * 1999-08-13 2002-10-09 Marconi Comm Ltd Methods of controlling a laser in a WDM application
JP2001284717A (ja) * 2000-03-30 2001-10-12 Ando Electric Co Ltd 外部共振器型レーザ光源
JP2002232075A (ja) * 2001-01-31 2002-08-16 Ando Electric Co Ltd 波長可変光源
US6658031B2 (en) * 2001-07-06 2003-12-02 Intel Corporation Laser apparatus with active thermal tuning of external cavity
US6816516B2 (en) 2001-03-21 2004-11-09 Intel Corporation Error signal generation system
US7356055B2 (en) * 2001-04-12 2008-04-08 Finisar Corporation Method and device for regulating the average wavelength of a laser, especially a semiconductor laser
US6804278B2 (en) * 2001-07-06 2004-10-12 Intel Corporation Evaluation and adjustment of laser losses according to voltage across gain medium
US6631146B2 (en) * 2001-07-06 2003-10-07 Intel Corporation Tunable laser control system
US6788724B2 (en) 2001-07-06 2004-09-07 Intel Corporation Hermetically sealed external cavity laser system and method
US7027472B2 (en) * 2001-07-19 2006-04-11 Axsun Technologies, Inc. Fixed wavelength single longitudinal mode coolerless external cavity semiconductor laser system
US6507593B1 (en) * 2001-09-24 2003-01-14 Coherent, Inc. Step-tunable external-cavity surface-emitting semiconductor laser
JP2005524246A (ja) * 2002-04-30 2005-08-11 アジレント・テクノロジーズ・インク パラメータ補正を有する波長可変レーザ光源
US6845121B2 (en) 2002-06-15 2005-01-18 Intel Corporation Optical isolator apparatus and methods
EP1330000A1 (de) * 2002-12-06 2003-07-23 Agilent Technologies Inc Bestimmung des Arbeitspunktes für einen Laser mit Modenauswahl
US7174198B2 (en) * 2002-12-27 2007-02-06 Igor Trofimov Non-invasive detection of analytes in a complex matrix
KR100639768B1 (ko) 2004-08-04 2006-10-30 전남대학교산학협력단 광대역 다파장 레이저 발진 튜닝모듈장치
US20060072634A1 (en) * 2004-09-30 2006-04-06 Daiber Andrew J Calibration methods for tunable lasers
JP2006171380A (ja) * 2004-12-16 2006-06-29 Sony Corp ホログラム記録再生装置及びホログラム記録再生方法
DE112006000934T5 (de) * 2005-04-13 2008-06-05 Corning Inc. Mode-Matching bzw. Modenanpassungssystem für Laser mit durchstimmbarem externen Resonator
JP2009147102A (ja) * 2007-12-14 2009-07-02 Tecdia Kk 光通信用デバイスの制御方式及び光通信用デバイスの制御方法
SG160245A1 (en) * 2008-09-12 2010-04-29 Dragon Energy Pte Ltd A base tile

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* Cited by examiner, † Cited by third party
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JPS63250966A (ja) * 1987-04-07 1988-10-18 Asahi Optical Co Ltd 半導体レ−ザの光出力制御装置
US4796996A (en) * 1987-08-14 1989-01-10 American Telephone And Telegraph Company, At&T Bell Laboratories Laser temperature modulation and detection method
JPH02102589A (ja) * 1988-10-12 1990-04-16 Nec Corp レーザーダイオード駆動回路
US5691989A (en) * 1991-07-26 1997-11-25 Accuwave Corporation Wavelength stabilized laser sources using feedback from volume holograms
US5230005A (en) * 1991-11-05 1993-07-20 The United States Of America As Represented By The Secretary Of The Navy Electronic tuning of a broadband laser
FR2694423B1 (fr) * 1992-07-30 1994-12-23 France Telecom Dispositif de contrôle de la puissance de sortie des diodes laser.
US5537432A (en) * 1993-01-07 1996-07-16 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser
EP0618653B1 (de) * 1993-03-30 1997-07-16 Nec Corporation Frequenzstabilisationsverfahren für Halbleiterlaser und frequenzstabilisierte Lichtquelle
US5420877A (en) * 1993-07-16 1995-05-30 Cymer Laser Technologies Temperature compensation method and apparatus for wave meters and tunable lasers controlled thereby
JPH0766482A (ja) * 1993-08-26 1995-03-10 Anritsu Corp 可変波長光源
US5511086A (en) * 1995-03-22 1996-04-23 The Texas A&M University System Low noise and narrow linewidth external cavity semiconductor laser for coherent frequency and time domain reflectometry
US5604758A (en) * 1995-09-08 1997-02-18 Xerox Corporation Microprocessor controlled thermoelectric cooler and laser power controller
US5771252A (en) * 1996-01-29 1998-06-23 Sdl, Inc. External cavity, continuously tunable wavelength source
JP3823262B2 (ja) * 1996-06-19 2006-09-20 株式会社トプコン レーザー発振装置
US5812572A (en) * 1996-07-01 1998-09-22 Pacific Fiberoptics, Inc. Intelligent fiberoptic transmitters and methods of operating and manufacturing the same
JP3197869B2 (ja) * 1998-03-31 2001-08-13 アンリツ株式会社 波長可変レーザ光源装置

Also Published As

Publication number Publication date
DE69732254T2 (de) 2006-01-12
US6438147B1 (en) 2002-08-20
EP0979547B1 (de) 2005-01-12
AU729110B2 (en) 2001-01-25
EP0979547A1 (de) 2000-02-16
WO1998005105A1 (en) 1998-02-05
JP2000516040A (ja) 2000-11-28
EP0979547A4 (de) 2001-05-16
CA2261036A1 (en) 1998-02-05
AU4046697A (en) 1998-02-20
CA2261036C (en) 2004-11-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOSCH JEHLE PATENTANWALTSGESELLSCHAFT MBH, 80639 M