DE69729902D1 - Photolack-Entwicklungsverfahren, das eine zusätzliche Anwendung der Entwicklerflüssigkeit einschliesst - Google Patents

Photolack-Entwicklungsverfahren, das eine zusätzliche Anwendung der Entwicklerflüssigkeit einschliesst

Info

Publication number
DE69729902D1
DE69729902D1 DE69729902T DE69729902T DE69729902D1 DE 69729902 D1 DE69729902 D1 DE 69729902D1 DE 69729902 T DE69729902 T DE 69729902T DE 69729902 T DE69729902 T DE 69729902T DE 69729902 D1 DE69729902 D1 DE 69729902D1
Authority
DE
Germany
Prior art keywords
development process
additional application
developer liquid
photoresist development
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69729902T
Other languages
English (en)
Other versions
DE69729902T2 (de
Inventor
Tsuyoshi Shibata
Eric Alfred Lehner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
International Business Machines Corp
Original Assignee
Toshiba Corp
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, International Business Machines Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69729902D1 publication Critical patent/DE69729902D1/de
Publication of DE69729902T2 publication Critical patent/DE69729902T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69729902T 1996-03-05 1997-03-05 Photolack-Entwicklungsverfahren, das eine zusätzliche Anwendung der Entwicklerflüssigkeit einschliesst Expired - Lifetime DE69729902T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/610,981 US5897982A (en) 1996-03-05 1996-03-05 Resist develop process having a post develop dispense step
US610981 1996-03-05

Publications (2)

Publication Number Publication Date
DE69729902D1 true DE69729902D1 (de) 2004-08-26
DE69729902T2 DE69729902T2 (de) 2005-07-21

Family

ID=24447175

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69729902T Expired - Lifetime DE69729902T2 (de) 1996-03-05 1997-03-05 Photolack-Entwicklungsverfahren, das eine zusätzliche Anwendung der Entwicklerflüssigkeit einschliesst

Country Status (4)

Country Link
US (1) US5897982A (de)
EP (1) EP0794463B1 (de)
JP (1) JPH09326361A (de)
DE (1) DE69729902T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1213788A (zh) * 1997-06-26 1999-04-14 西门子公司 抗蚀显影方法
JP3039467B2 (ja) 1997-07-31 2000-05-08 日本電気株式会社 レジスト現像方法
US6248171B1 (en) 1998-09-17 2001-06-19 Silicon Valley Group, Inc. Yield and line width performance for liquid polymers and other materials
US6689215B2 (en) 1998-09-17 2004-02-10 Asml Holdings, N.V. Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface
KR100434485B1 (ko) * 1999-10-08 2004-06-05 삼성전자주식회사 포토레지스트 스트립퍼 조성물 및 이를 이용한 포토레지스트 스트립 방법
US6281130B1 (en) * 2000-06-16 2001-08-28 Advanced Micro Devices, Inc. Method for developing ultra-thin resist films
US6746826B1 (en) * 2000-07-25 2004-06-08 Asml Holding N.V. Method for an improved developing process in wafer photolithography
KR20020068130A (ko) * 2001-02-20 2002-08-27 동부전자 주식회사 반도체 제조 공정에서의 감광막 현상 방법
GB2383849A (en) * 2002-01-03 2003-07-09 Zarlink Semiconductor Ltd Resist development
TW554075B (en) * 2002-04-17 2003-09-21 Grand Plastic Technology Corp Puddle etching method of thin film using spin processor
JP2007036268A (ja) * 2002-07-22 2007-02-08 Yoshitake Ito 基板処理方法及び基板処理装置
JP2004072120A (ja) * 2002-07-22 2004-03-04 Yoshitake Ito 現像方法及び現像装置及び液処理方法及び液処理装置
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
KR100698093B1 (ko) * 2005-07-26 2007-03-23 동부일렉트로닉스 주식회사 포토레지스트 패턴의 형성방법
JP2007305864A (ja) * 2006-05-12 2007-11-22 Matsushita Electric Ind Co Ltd 現像方法及びそれを用いた半導体装置の製造方法
DE102006030359B4 (de) * 2006-06-30 2011-07-07 Infineon Technologies AG, 81669 Verfahren zum Entwickeln eines Photolacks
US8148055B2 (en) * 2006-06-30 2012-04-03 Infineon Technologies Ag Method for developing a photoresist
US20150050602A1 (en) * 2011-12-06 2015-02-19 National Institute Of Advanced Industrial Science And Technology Spin Development Method and Apparatus
JP5940022B2 (ja) * 2013-06-13 2016-06-29 三菱電機株式会社 半導体装置の製造方法
JP6482919B2 (ja) * 2015-03-23 2019-03-13 株式会社Ｓｃｒｅｅｎホールディングス ネガティブ現像処理方法およびネガティブ現像処理装置
CN104932209A (zh) * 2015-06-26 2015-09-23 湘能华磊光电股份有限公司 一种改进的图形化衬底显影方法
US11022890B2 (en) * 2017-02-23 2021-06-01 International Business Machines Corporation Photoresist bridging defect removal by reverse tone weak developer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
US4564280A (en) * 1982-10-28 1986-01-14 Fujitsu Limited Method and apparatus for developing resist film including a movable nozzle arm
US4587203A (en) * 1983-05-05 1986-05-06 Hughes Aircraft Company Wet process for developing styrene polymer resists for submicron lithography
US4690880A (en) * 1984-07-20 1987-09-01 Canon Kabushiki Kaisha Pattern forming method
GB2166254A (en) * 1984-10-08 1986-04-30 British Telecomm Method for the production of a metal patterning mask
DE3501675A1 (de) * 1985-01-19 1986-07-24 Merck Patent Gmbh, 6100 Darmstadt Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten
US4902608A (en) * 1987-12-17 1990-02-20 Texas Instruments Incorporated Immersion development and rinse machine and process
US5451480A (en) * 1990-02-26 1995-09-19 At&T Corp. Artical fabrication utilizing lithographic processes
US5196285A (en) * 1990-05-18 1993-03-23 Xinix, Inc. Method for control of photoresist develop processes
US5342738A (en) * 1991-06-04 1994-08-30 Sony Corporation Resist film developing method and an apparatus for carrying out the same
JPH0645244A (ja) * 1991-07-30 1994-02-18 Mitsumi Electric Co Ltd Ｉｃ製造における現像方法
JP3162497B2 (ja) * 1992-08-28 2001-04-25 富士通株式会社 レジストの現像装置および現像方法
JP3040055B2 (ja) * 1994-08-01 2000-05-08 キヤノン株式会社 感光性樹脂の現像方法

Also Published As

Publication number Publication date
EP0794463A3 (de) 1997-10-29
JPH09326361A (ja) 1997-12-16
US5897982A (en) 1999-04-27
DE69729902T2 (de) 2005-07-21
EP0794463B1 (de) 2004-07-21
EP0794463A2 (de) 1997-09-10

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