DE69729902D1 - Photolack-Entwicklungsverfahren, das eine zusätzliche Anwendung der Entwicklerflüssigkeit einschliesst - Google Patents
Photolack-Entwicklungsverfahren, das eine zusätzliche Anwendung der Entwicklerflüssigkeit einschliesstInfo
- Publication number
- DE69729902D1 DE69729902D1 DE69729902T DE69729902T DE69729902D1 DE 69729902 D1 DE69729902 D1 DE 69729902D1 DE 69729902 T DE69729902 T DE 69729902T DE 69729902 T DE69729902 T DE 69729902T DE 69729902 D1 DE69729902 D1 DE 69729902D1
- Authority
- DE
- Germany
- Prior art keywords
- development process
- additional application
- developer liquid
- photoresist development
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/610,981 US5897982A (en) | 1996-03-05 | 1996-03-05 | Resist develop process having a post develop dispense step |
US610981 | 1996-03-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69729902D1 true DE69729902D1 (de) | 2004-08-26 |
DE69729902T2 DE69729902T2 (de) | 2005-07-21 |
Family
ID=24447175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69729902T Expired - Lifetime DE69729902T2 (de) | 1996-03-05 | 1997-03-05 | Photolack-Entwicklungsverfahren, das eine zusätzliche Anwendung der Entwicklerflüssigkeit einschliesst |
Country Status (4)
Country | Link |
---|---|
US (1) | US5897982A (de) |
EP (1) | EP0794463B1 (de) |
JP (1) | JPH09326361A (de) |
DE (1) | DE69729902T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1213788A (zh) * | 1997-06-26 | 1999-04-14 | 西门子公司 | 抗蚀显影方法 |
JP3039467B2 (ja) | 1997-07-31 | 2000-05-08 | 日本電気株式会社 | レジスト現像方法 |
US6248171B1 (en) | 1998-09-17 | 2001-06-19 | Silicon Valley Group, Inc. | Yield and line width performance for liquid polymers and other materials |
US6689215B2 (en) | 1998-09-17 | 2004-02-10 | Asml Holdings, N.V. | Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface |
KR100434485B1 (ko) * | 1999-10-08 | 2004-06-05 | 삼성전자주식회사 | 포토레지스트 스트립퍼 조성물 및 이를 이용한 포토레지스트 스트립 방법 |
US6281130B1 (en) * | 2000-06-16 | 2001-08-28 | Advanced Micro Devices, Inc. | Method for developing ultra-thin resist films |
US6746826B1 (en) * | 2000-07-25 | 2004-06-08 | Asml Holding N.V. | Method for an improved developing process in wafer photolithography |
KR20020068130A (ko) * | 2001-02-20 | 2002-08-27 | 동부전자 주식회사 | 반도체 제조 공정에서의 감광막 현상 방법 |
GB2383849A (en) * | 2002-01-03 | 2003-07-09 | Zarlink Semiconductor Ltd | Resist development |
TW554075B (en) * | 2002-04-17 | 2003-09-21 | Grand Plastic Technology Corp | Puddle etching method of thin film using spin processor |
JP2007036268A (ja) * | 2002-07-22 | 2007-02-08 | Yoshitake Ito | 基板処理方法及び基板処理装置 |
JP2004072120A (ja) * | 2002-07-22 | 2004-03-04 | Yoshitake Ito | 現像方法及び現像装置及び液処理方法及び液処理装置 |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
KR100698093B1 (ko) * | 2005-07-26 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 포토레지스트 패턴의 형성방법 |
JP2007305864A (ja) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 現像方法及びそれを用いた半導体装置の製造方法 |
DE102006030359B4 (de) * | 2006-06-30 | 2011-07-07 | Infineon Technologies AG, 81669 | Verfahren zum Entwickeln eines Photolacks |
US8148055B2 (en) * | 2006-06-30 | 2012-04-03 | Infineon Technologies Ag | Method for developing a photoresist |
US20150050602A1 (en) * | 2011-12-06 | 2015-02-19 | National Institute Of Advanced Industrial Science And Technology | Spin Development Method and Apparatus |
JP5940022B2 (ja) * | 2013-06-13 | 2016-06-29 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP6482919B2 (ja) * | 2015-03-23 | 2019-03-13 | 株式会社Screenホールディングス | ネガティブ現像処理方法およびネガティブ現像処理装置 |
CN104932209A (zh) * | 2015-06-26 | 2015-09-23 | 湘能华磊光电股份有限公司 | 一种改进的图形化衬底显影方法 |
US11022890B2 (en) * | 2017-02-23 | 2021-06-01 | International Business Machines Corporation | Photoresist bridging defect removal by reverse tone weak developer |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3930857A (en) * | 1973-05-03 | 1976-01-06 | International Business Machines Corporation | Resist process |
US4564280A (en) * | 1982-10-28 | 1986-01-14 | Fujitsu Limited | Method and apparatus for developing resist film including a movable nozzle arm |
US4587203A (en) * | 1983-05-05 | 1986-05-06 | Hughes Aircraft Company | Wet process for developing styrene polymer resists for submicron lithography |
US4690880A (en) * | 1984-07-20 | 1987-09-01 | Canon Kabushiki Kaisha | Pattern forming method |
GB2166254A (en) * | 1984-10-08 | 1986-04-30 | British Telecomm | Method for the production of a metal patterning mask |
DE3501675A1 (de) * | 1985-01-19 | 1986-07-24 | Merck Patent Gmbh, 6100 Darmstadt | Mittel und verfahren zur entfernung von fotoresist- und stripperresten von halbleitersubstraten |
US4902608A (en) * | 1987-12-17 | 1990-02-20 | Texas Instruments Incorporated | Immersion development and rinse machine and process |
US5451480A (en) * | 1990-02-26 | 1995-09-19 | At&T Corp. | Artical fabrication utilizing lithographic processes |
US5196285A (en) * | 1990-05-18 | 1993-03-23 | Xinix, Inc. | Method for control of photoresist develop processes |
US5342738A (en) * | 1991-06-04 | 1994-08-30 | Sony Corporation | Resist film developing method and an apparatus for carrying out the same |
JPH0645244A (ja) * | 1991-07-30 | 1994-02-18 | Mitsumi Electric Co Ltd | Ic製造における現像方法 |
JP3162497B2 (ja) * | 1992-08-28 | 2001-04-25 | 富士通株式会社 | レジストの現像装置および現像方法 |
JP3040055B2 (ja) * | 1994-08-01 | 2000-05-08 | キヤノン株式会社 | 感光性樹脂の現像方法 |
-
1996
- 1996-03-05 US US08/610,981 patent/US5897982A/en not_active Expired - Lifetime
-
1997
- 1997-02-25 JP JP9040558A patent/JPH09326361A/ja active Pending
- 1997-03-05 EP EP97103635A patent/EP0794463B1/de not_active Expired - Lifetime
- 1997-03-05 DE DE69729902T patent/DE69729902T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0794463A3 (de) | 1997-10-29 |
JPH09326361A (ja) | 1997-12-16 |
US5897982A (en) | 1999-04-27 |
DE69729902T2 (de) | 2005-07-21 |
EP0794463B1 (de) | 2004-07-21 |
EP0794463A2 (de) | 1997-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |