DE69720725D1 - Verbesserte Ausgangsschaltung für integrierte Schaltungen - Google Patents
Verbesserte Ausgangsschaltung für integrierte SchaltungenInfo
- Publication number
- DE69720725D1 DE69720725D1 DE69720725T DE69720725T DE69720725D1 DE 69720725 D1 DE69720725 D1 DE 69720725D1 DE 69720725 T DE69720725 T DE 69720725T DE 69720725 T DE69720725 T DE 69720725T DE 69720725 D1 DE69720725 D1 DE 69720725D1
- Authority
- DE
- Germany
- Prior art keywords
- output circuit
- integrated circuits
- improved output
- improved
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/901—MOSFET substrate bias
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97830542A EP0911974B1 (de) | 1997-10-24 | 1997-10-24 | Verbesserte Ausgangsschaltung für integrierte Schaltungen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69720725D1 true DE69720725D1 (de) | 2003-05-15 |
Family
ID=8230822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69720725T Expired - Lifetime DE69720725D1 (de) | 1997-10-24 | 1997-10-24 | Verbesserte Ausgangsschaltung für integrierte Schaltungen |
Country Status (4)
Country | Link |
---|---|
US (1) | US6153914A (de) |
EP (1) | EP0911974B1 (de) |
JP (1) | JPH11195715A (de) |
DE (1) | DE69720725D1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6054505A (en) * | 1998-03-24 | 2000-04-25 | Xerox Corporation | Ink compositions with improved shelf stability |
US6441442B1 (en) * | 2000-05-30 | 2002-08-27 | Programmable Silicon Solutions | Integrated inductive circuits |
US6917095B1 (en) | 2000-05-30 | 2005-07-12 | Altera Corporation | Integrated radio frequency circuits |
US20020125537A1 (en) * | 2000-05-30 | 2002-09-12 | Ting-Wah Wong | Integrated radio frequency circuits |
JP2002164441A (ja) * | 2000-11-27 | 2002-06-07 | Matsushita Electric Ind Co Ltd | 高周波スイッチ回路装置 |
US7061049B2 (en) * | 2001-06-12 | 2006-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device |
US8283730B2 (en) * | 2008-05-27 | 2012-10-09 | Shu-Lu Chen | Negative differential resistance device with high PVCR and fast switching speed and memory using the same |
TWI395322B (en) * | 2008-10-02 | 2013-05-01 | Negative differential resistance memory | |
KR101211683B1 (ko) * | 2008-12-31 | 2012-12-12 | 에스케이하이닉스 주식회사 | 반도체 집적회로 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03148827A (ja) * | 1989-11-06 | 1991-06-25 | Nec Ic Microcomput Syst Ltd | 半導体集積回路 |
US5473183A (en) * | 1992-02-21 | 1995-12-05 | Sony Corporation | Semiconductor device of a first conductivity type which has a first well of a second conductivity type formed therein and a second well of the first conductivity type formed in the first well and a pair of MOSFET formed in the first and second wells |
JPH06314773A (ja) * | 1993-03-03 | 1994-11-08 | Nec Corp | 半導体装置 |
US5438277A (en) * | 1993-03-19 | 1995-08-01 | Advanced Micro Devices, Inc. | Ground bounce isolated output buffer |
JPH0786430A (ja) * | 1993-09-14 | 1995-03-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH08181598A (ja) * | 1994-12-27 | 1996-07-12 | Oki Electric Ind Co Ltd | 半導体装置 |
JP3641511B2 (ja) * | 1995-06-16 | 2005-04-20 | 株式会社ルネサステクノロジ | 半導体装置 |
JPH09199607A (ja) * | 1996-01-18 | 1997-07-31 | Nec Corp | Cmos半導体装置 |
-
1997
- 1997-10-24 DE DE69720725T patent/DE69720725D1/de not_active Expired - Lifetime
- 1997-10-24 EP EP97830542A patent/EP0911974B1/de not_active Expired - Lifetime
-
1998
- 1998-10-13 US US09/170,788 patent/US6153914A/en not_active Expired - Lifetime
- 1998-10-21 JP JP10299381A patent/JPH11195715A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0911974A1 (de) | 1999-04-28 |
US6153914A (en) | 2000-11-28 |
JPH11195715A (ja) | 1999-07-21 |
EP0911974B1 (de) | 2003-04-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |