DE69713500D1 - Schichtiges medium und verfahren zur erzeugung von mustern - Google Patents

Schichtiges medium und verfahren zur erzeugung von mustern

Info

Publication number
DE69713500D1
DE69713500D1 DE69713500T DE69713500T DE69713500D1 DE 69713500 D1 DE69713500 D1 DE 69713500D1 DE 69713500 T DE69713500 T DE 69713500T DE 69713500 T DE69713500 T DE 69713500T DE 69713500 D1 DE69713500 D1 DE 69713500D1
Authority
DE
Germany
Prior art keywords
layered medium
producing patterns
patterns
producing
layered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69713500T
Other languages
English (en)
Other versions
DE69713500T2 (de
Inventor
K Gimzewski
Thomas Jung
R Schlittler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69713500D1 publication Critical patent/DE69713500D1/de
Publication of DE69713500T2 publication Critical patent/DE69713500T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/164—Coating processes; Apparatus therefor using electric, electrostatic or magnetic means; powder coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y10S977/858—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure including positioning/mounting nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
DE69713500T 1997-02-06 1997-02-06 Schichtiges medium und verfahren zur erzeugung von mustern Expired - Lifetime DE69713500T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB1997/000083 WO1998035271A1 (en) 1997-02-06 1997-02-06 Molecule, layered medium and method for creating a pattern

Publications (2)

Publication Number Publication Date
DE69713500D1 true DE69713500D1 (de) 2002-07-25
DE69713500T2 DE69713500T2 (de) 2003-02-20

Family

ID=11004527

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69713500T Expired - Lifetime DE69713500T2 (de) 1997-02-06 1997-02-06 Schichtiges medium und verfahren zur erzeugung von mustern

Country Status (6)

Country Link
US (1) US6031756A (de)
EP (1) EP0892942B1 (de)
JP (1) JP3525934B2 (de)
KR (1) KR100296613B1 (de)
DE (1) DE69713500T2 (de)
WO (1) WO1998035271A1 (de)

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US6353219B1 (en) * 1994-07-28 2002-03-05 Victor B. Kley Object inspection and/or modification system and method
US6752008B1 (en) 2001-03-08 2004-06-22 General Nanotechnology Llc Method and apparatus for scanning in scanning probe microscopy and presenting results
US7196328B1 (en) 2001-03-08 2007-03-27 General Nanotechnology Llc Nanomachining method and apparatus
US6802646B1 (en) 2001-04-30 2004-10-12 General Nanotechnology Llc Low-friction moving interfaces in micromachines and nanomachines
US6787768B1 (en) 2001-03-08 2004-09-07 General Nanotechnology Llc Method and apparatus for tool and tip design for nanomachining and measurement
NO312867B1 (no) * 1999-06-30 2002-07-08 Penn State Res Found Anordning til elektrisk kontaktering eller isolering av organiske eller uorganiske halvledere, samt fremgangsmåte til densfremstilling
EP1196939A4 (de) * 1999-07-01 2002-09-18 Gen Nanotechnology Llc Vorrichtung und verfahren zur untersuchung und/oder veränderungsobjekt
IL147119A0 (en) 1999-07-01 2002-08-14 Univ High density non-volatile memory device
US6381169B1 (en) 1999-07-01 2002-04-30 The Regents Of The University Of California High density non-volatile memory device
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices
US6212093B1 (en) * 2000-01-14 2001-04-03 North Carolina State University High-density non-volatile memory devices incorporating sandwich coordination compounds
EP1249021A4 (de) * 2000-01-14 2007-03-28 Univ North Carolina State Substrate mit vernetzten sndwichkoordinationsverbindungspolymeren und verfahren für deren anwendung
US7714438B2 (en) * 2000-12-14 2010-05-11 Hewlett-Packard Development Company, L.P. Bistable molecular mechanical devices with a band gap change activated by an electrical field for electronic switching, gating, and memory applications
US6701035B2 (en) * 2000-12-14 2004-03-02 Hewlett-Packard Development Company, L.P. Electric-field actuated chromogenic materials based on molecules with a rotating middle segment for applications in photonic switching
US6674932B1 (en) * 2000-12-14 2004-01-06 Hewlett-Packard Development Company, L.P. Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications
US6512119B2 (en) * 2001-01-12 2003-01-28 Hewlett-Packard Company Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications
US7112366B2 (en) * 2001-01-05 2006-09-26 The Ohio State University Chemical monolayer and micro-electronic junctions and devices containing same
US7170842B2 (en) * 2001-02-15 2007-01-30 Hewlett-Packard Development Company, L.P. Methods for conducting current between a scanned-probe and storage medium
WO2002077633A1 (en) 2001-03-23 2002-10-03 The Regents Of The University Of California Open circuit potential amperometry and voltammetry
US6995312B2 (en) * 2001-03-29 2006-02-07 Hewlett-Packard Development Company, L.P. Bistable molecular switches and associated methods
WO2002086200A1 (en) * 2001-04-23 2002-10-31 Universität Basel Production method for atomic and molecular patterns on surfaces and nanostructured devices
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7566478B2 (en) * 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6556470B1 (en) * 2001-07-31 2003-04-29 Hewlett-Packard Company Field addressable rewritable media
ITMI20012075A1 (it) * 2001-10-08 2003-04-08 Consiglio Nazionale Ricerche Procedimento per il conferimento e controllo su scale micro e nanomatriche dell'anisotropia di proprieta' strutturali elettriche ottiche ed
US6850230B1 (en) * 2001-10-16 2005-02-01 Hewlett-Packard Development Company, L.P. Electronic writing and erasing pencil
US7053369B1 (en) * 2001-10-19 2006-05-30 Rave Llc Scan data collection for better overall data accuracy
US7348206B2 (en) * 2001-10-26 2008-03-25 The Regents Of The University Of California Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications
US7074519B2 (en) * 2001-10-26 2006-07-11 The Regents Of The University Of California Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
US6670981B1 (en) * 2001-10-30 2003-12-30 Hewlett-Packard Development Company, L.P. Laser printing with rewritable media
US7020355B2 (en) * 2001-11-02 2006-03-28 Massachusetts Institute Of Technology Switchable surfaces
JP2003209305A (ja) * 2001-11-13 2003-07-25 Hewlett Packard Co <Hp> 電界調整式双安定分子システム
US6813937B2 (en) 2001-11-28 2004-11-09 General Nanotechnology Llc Method and apparatus for micromachines, microstructures, nanomachines and nanostructures
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6728129B2 (en) * 2002-02-19 2004-04-27 The Regents Of The University Of California Multistate triple-decker dyads in three distinct architectures for information storage applications
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
EP1539637A4 (de) 2002-09-09 2010-07-28 Gen Nanotechnology Llc Fluidzufuhr für rastertunnelmikroskopie
US7560136B2 (en) * 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
KR100547015B1 (ko) * 2003-05-23 2006-01-26 주식회사 올메디쿠스 일정한 크기 이상의 분석물질을 정량 분석하기 위한바이오센서 및 그 제조방법
US7737433B2 (en) 2004-03-08 2010-06-15 The Ohio State University Research Foundation Electronic junction devices featuring redox electrodes
US20060238696A1 (en) * 2005-04-20 2006-10-26 Chien-Hui Wen Method of aligning negative dielectric anisotropic liquid crystals
US20070090344A1 (en) * 2005-10-24 2007-04-26 Hewlett-Packard Development Company, L.P. Multi-stable molecular device
US7604916B2 (en) * 2006-11-06 2009-10-20 3M Innovative Properties Company Donor films with pattern-directing layers
GB201203511D0 (en) * 2012-02-29 2012-04-11 Ibm Position sensing apparatus
US9583358B2 (en) 2014-05-30 2017-02-28 Samsung Electronics Co., Ltd. Hardmask composition and method of forming pattern by using the hardmask composition
KR102287343B1 (ko) 2014-07-04 2021-08-06 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
KR102463893B1 (ko) 2015-04-03 2022-11-04 삼성전자주식회사 하드마스크 조성물 및 이를 이용한 패턴의 형성방법
US11034847B2 (en) 2017-07-14 2021-06-15 Samsung Electronics Co., Ltd. Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition
KR102433666B1 (ko) 2017-07-27 2022-08-18 삼성전자주식회사 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
KR102486388B1 (ko) 2017-07-28 2023-01-09 삼성전자주식회사 그래핀 양자점의 제조방법, 상기 제조방법에 따라 얻어진 그래핀 양자점을 포함한 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크

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DE3789373T2 (de) * 1986-12-24 1994-06-23 Canon Kk Aufnahmegerät und Wiedergabegerät.
US5314725A (en) * 1992-02-17 1994-05-24 Kabushiki Kaisha Toyota Chuo Kenkyusho Photo-plating process
US5751629A (en) * 1995-04-25 1998-05-12 Irori Remotely programmable matrices with memories

Also Published As

Publication number Publication date
DE69713500T2 (de) 2003-02-20
JPH11509271A (ja) 1999-08-17
KR20000064617A (ko) 2000-11-06
EP0892942B1 (de) 2002-06-19
JP3525934B2 (ja) 2004-05-10
US6031756A (en) 2000-02-29
KR100296613B1 (ko) 2001-09-22
EP0892942A1 (de) 1999-01-27
WO1998035271A1 (en) 1998-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: DUSCHER, R., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 7