DE69627299T2 - Verfahren zur herstellung geformter kristalle durch spritzen einer flüssigkeit mit druck in vertikaler richtung - Google Patents
Verfahren zur herstellung geformter kristalle durch spritzen einer flüssigkeit mit druck in vertikaler richtung Download PDFInfo
- Publication number
- DE69627299T2 DE69627299T2 DE69627299T DE69627299T DE69627299T2 DE 69627299 T2 DE69627299 T2 DE 69627299T2 DE 69627299 T DE69627299 T DE 69627299T DE 69627299 T DE69627299 T DE 69627299T DE 69627299 T2 DE69627299 T2 DE 69627299T2
- Authority
- DE
- Germany
- Prior art keywords
- spraying
- liquid
- pressure
- vertical direction
- shaped crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000007788 liquid Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005507 spraying Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D11/00—Self-contained movable devices, e.g. domestic refrigerators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Control Of Temperature (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27675195A JP3151759B2 (ja) | 1994-12-22 | 1995-09-29 | 熱電半導体針状結晶及び熱電半導体素子の製造方法 |
JP7351521A JPH09181362A (ja) | 1995-12-26 | 1995-12-26 | 可撓性を有する熱電素子及びそれからなる冷却加熱装置 |
PCT/JP1996/002144 WO1997013010A1 (en) | 1995-09-29 | 1996-07-30 | Method of manufacturing shaped crystals by upward pressurization type liquid injection |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69627299D1 DE69627299D1 (de) | 2003-05-15 |
DE69627299T2 true DE69627299T2 (de) | 2004-01-29 |
Family
ID=26552099
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69627299T Expired - Fee Related DE69627299T2 (de) | 1995-09-29 | 1996-07-30 | Verfahren zur herstellung geformter kristalle durch spritzen einer flüssigkeit mit druck in vertikaler richtung |
DE69630014T Expired - Fee Related DE69630014T2 (de) | 1995-09-29 | 1996-07-30 | Thermoelektrische anordnung und thermoelektrischer(s) kühler/heizgerät |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69630014T Expired - Fee Related DE69630014T2 (de) | 1995-09-29 | 1996-07-30 | Thermoelektrische anordnung und thermoelektrischer(s) kühler/heizgerät |
Country Status (4)
Country | Link |
---|---|
US (2) | US6097088A (de) |
EP (3) | EP1329538A2 (de) |
DE (2) | DE69627299T2 (de) |
WO (2) | WO1997013284A1 (de) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10178216A (ja) * | 1996-12-18 | 1998-06-30 | Seru Appl Kk | 熱電素子及び熱電冷却装置 |
US6458319B1 (en) * | 1997-03-18 | 2002-10-01 | California Institute Of Technology | High performance P-type thermoelectric materials and methods of preparation |
JP3255629B2 (ja) | 1999-11-26 | 2002-02-12 | モリックス株式会社 | 熱電素子 |
US6440212B1 (en) * | 2000-02-28 | 2002-08-27 | Microfab Technologies, Inc. | Low cost method for making thermoelectric coolers |
DE10045419B4 (de) * | 2000-09-14 | 2007-12-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines thermoelektrischen Bauelements, thermoelektrisches Bauelement sowie Vorrichtung zur Durchführung des Verfahrens |
US7164077B2 (en) | 2001-04-09 | 2007-01-16 | Research Triangle Institute | Thin-film thermoelectric cooling and heating devices for DNA genomic and proteomic chips, thermo-optical switching circuits, and IR tags |
US6410971B1 (en) | 2001-07-12 | 2002-06-25 | Ferrotec (Usa) Corporation | Thermoelectric module with thin film substrates |
EP1420437A4 (de) * | 2001-07-25 | 2006-02-08 | Seiko Epson Corp | Verfahren zur herstellung eines halbleiter-dünnfilms, verfahren zur herstellung eines halbleiterbauelements, halbleiterbauelement, integrierte schaltung, elektrooptisches bauelement und elektronische vorrichtung |
EP1433208A4 (de) | 2001-10-05 | 2008-02-20 | Nextreme Thermal Solutions Inc | Phononenblockierende, elektronendurchlassende niedrigdimensionale strukturen |
US6700052B2 (en) * | 2001-11-05 | 2004-03-02 | Amerigon Incorporated | Flexible thermoelectric circuit |
US20040178517A9 (en) * | 2001-12-21 | 2004-09-16 | Siu Wing Ming | Split body peltier device for cooling and power generation applications |
KR20050000514A (ko) | 2002-04-15 | 2005-01-05 | 리써치 트라이앵글 인스티튜트 | 양면 펠티어 접합을 이용하는 열전 장치 및 그 열전장치의 제조 방법 |
DE10230080B4 (de) * | 2002-06-27 | 2008-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer thermoelektrischen Schichtenstruktur und Bauelemente mit einer thermoelektrischen Schichtenstruktur |
CA2492958A1 (en) * | 2002-08-07 | 2004-02-19 | Phoenix Consultants, Ltd. | Temperature regulated clothing |
US20060278265A1 (en) * | 2003-05-23 | 2006-12-14 | Martin Ouwerkerk | Method of manufacturing a thermoelectric device and thermoelectric device obtained by means of such a method |
JP4521236B2 (ja) * | 2004-08-31 | 2010-08-11 | 株式会社東芝 | 熱電変換装置及び熱電変換装置の製造方法 |
US7523617B2 (en) | 2004-10-22 | 2009-04-28 | Nextreme Thermal Solutions, Inc. | Thin film thermoelectric devices for hot-spot thermal management in microprocessors and other electronics |
US7587901B2 (en) | 2004-12-20 | 2009-09-15 | Amerigon Incorporated | Control system for thermal module in vehicle |
JP2006287066A (ja) * | 2005-04-01 | 2006-10-19 | Denso Corp | 熱電変換装置およびその装置の製造方法 |
WO2007002342A2 (en) | 2005-06-22 | 2007-01-04 | Nextreme Thermal Solutions | Methods of forming thermoelectric devices including electrically insulating matrixes between conductive traces and related structures |
US8623687B2 (en) | 2005-06-22 | 2014-01-07 | Nextreme Thermal Solutions, Inc. | Methods of forming thermoelectric devices including conductive posts and/or different solder materials and related methods and structures |
CN1943918B (zh) * | 2005-08-25 | 2012-07-25 | 雅马哈株式会社 | 制备热电材料、形成热电器件和制造热电模块的方法 |
US20070101737A1 (en) | 2005-11-09 | 2007-05-10 | Masao Akei | Refrigeration system including thermoelectric heat recovery and actuation |
US7679203B2 (en) | 2006-03-03 | 2010-03-16 | Nextreme Thermal Solutions, Inc. | Methods of forming thermoelectric devices using islands of thermoelectric material and related structures |
US8222511B2 (en) | 2006-08-03 | 2012-07-17 | Gentherm | Thermoelectric device |
US7338027B1 (en) * | 2006-08-22 | 2008-03-04 | Cameron International Corporation | Fluid saving blowout preventer operator system |
US20080087316A1 (en) | 2006-10-12 | 2008-04-17 | Masa Inaba | Thermoelectric device with internal sensor |
FR2918080B1 (fr) * | 2007-06-29 | 2010-12-17 | Commissariat Energie Atomique | Dispositif et procede d'elaboration de plaquettes en materiau semi-conducteur par moulage et cristallisation dirigee |
TWI338390B (en) * | 2007-07-12 | 2011-03-01 | Ind Tech Res Inst | Flexible thermoelectric device and manufacturing method thereof |
US9105809B2 (en) | 2007-07-23 | 2015-08-11 | Gentherm Incorporated | Segmented thermoelectric device |
WO2009036077A1 (en) | 2007-09-10 | 2009-03-19 | Amerigon, Inc. | Operational control schemes for ventilated seat or bed assemblies |
EP3121061B1 (de) | 2008-02-01 | 2020-03-11 | Gentherm Incorporated | Kondensations- und feuchtigkeitssensoren für thermoelektrische vorrichtungen |
EP2341800B8 (de) | 2008-07-18 | 2012-12-26 | Gentherm Incorporated | Klimatisierte bettanordnung |
US8487177B2 (en) | 2010-02-27 | 2013-07-16 | The Boeing Company | Integrated thermoelectric honeycomb core and method |
US9601677B2 (en) | 2010-03-15 | 2017-03-21 | Laird Durham, Inc. | Thermoelectric (TE) devices/structures including thermoelectric elements with exposed major surfaces |
JP5656295B2 (ja) | 2011-04-22 | 2015-01-21 | パナソニックIpマネジメント株式会社 | 熱電変換モジュールとその製造方法 |
RU2482403C1 (ru) * | 2011-09-02 | 2013-05-20 | Общество с ограниченной ответственностью "Системы связи и технического контроля" (ООО "Системы СТК") | Теплообменник термоэлектрических устройств нагрева-охлаждения |
US9685599B2 (en) | 2011-10-07 | 2017-06-20 | Gentherm Incorporated | Method and system for controlling an operation of a thermoelectric device |
JP5956155B2 (ja) * | 2012-01-05 | 2016-07-27 | フタバ産業株式会社 | 熱電発電装置 |
US9989267B2 (en) | 2012-02-10 | 2018-06-05 | Gentherm Incorporated | Moisture abatement in heating operation of climate controlled systems |
US8397518B1 (en) | 2012-02-20 | 2013-03-19 | Dhama Innovations PVT. Ltd. | Apparel with integral heating and cooling device |
US9793462B2 (en) * | 2012-02-27 | 2017-10-17 | Kelk Ltd. | Thermoelectric module, thermoelectric power generating apparatus, and thermoelectric generator |
JP5670989B2 (ja) * | 2012-11-20 | 2015-02-18 | アイシン高丘株式会社 | 熱電モジュールの製造方法 |
US9352997B2 (en) * | 2013-06-27 | 2016-05-31 | Nachi-Fujikoshi Corp. | Melt molding method of germanium |
US9662962B2 (en) | 2013-11-05 | 2017-05-30 | Gentherm Incorporated | Vehicle headliner assembly for zonal comfort |
CN111016756B (zh) | 2014-02-14 | 2023-08-08 | 金瑟姆股份公司 | 传导对流气候控制组件 |
US11639816B2 (en) | 2014-11-14 | 2023-05-02 | Gentherm Incorporated | Heating and cooling technologies including temperature regulating pad wrap and technologies with liquid system |
CN107251247B (zh) | 2014-11-14 | 2021-06-01 | 查尔斯·J·柯西 | 加热和冷却技术 |
US11857004B2 (en) | 2014-11-14 | 2024-01-02 | Gentherm Incorporated | Heating and cooling technologies |
US11152556B2 (en) | 2017-07-29 | 2021-10-19 | Nanohmics, Inc. | Flexible and conformable thermoelectric compositions |
US11223004B2 (en) | 2018-07-30 | 2022-01-11 | Gentherm Incorporated | Thermoelectric device having a polymeric coating |
US20220013704A1 (en) * | 2018-11-20 | 2022-01-13 | The Regents Of The University Of California | Flexible thermoelectric devices |
US11993132B2 (en) | 2018-11-30 | 2024-05-28 | Gentherm Incorporated | Thermoelectric conditioning system and methods |
US11152557B2 (en) | 2019-02-20 | 2021-10-19 | Gentherm Incorporated | Thermoelectric module with integrated printed circuit board |
US20210059854A1 (en) * | 2019-09-03 | 2021-03-04 | Purdue Research Foundation | Portable Thermal Therapy System |
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---|---|---|---|---|
US2815303A (en) * | 1953-07-24 | 1957-12-03 | Raythcon Mfg Company | Method of making junction single crystals |
JPS34595B1 (de) * | 1956-12-28 | 1959-02-10 | ||
JPS3724548Y1 (de) * | 1960-03-07 | 1962-09-17 | ||
FR1323569A (fr) * | 1962-02-13 | 1963-04-12 | Thomson Houston Comp Francaise | Perfectionnements aux dispositifs de refroidissement thermoélectriques |
US3240628A (en) * | 1962-06-14 | 1966-03-15 | Carrier Corp | Thermoelectric panel |
JPS3827922Y1 (de) * | 1962-11-30 | 1963-12-20 | ||
JPS4023300Y1 (de) * | 1964-02-03 | 1965-08-10 | ||
JPS5117972B2 (de) * | 1971-09-01 | 1976-06-07 | ||
JPS4832942B1 (de) * | 1971-12-16 | 1973-10-09 | ||
JPS5120097A (ja) * | 1974-08-09 | 1976-02-17 | Takumi Sogabe | Maguneshiatanketsushono seizohoho |
FR2330976A1 (fr) * | 1975-11-05 | 1977-06-03 | Air Ind | Perfectionnements apportes aux installations thermoelectriques |
FR2509637A1 (fr) * | 1981-07-17 | 1983-01-21 | Commissariat Energie Atomique | Procede de sustentation, de positionnement et de moulage sans contact de masses liquides permettant la solidification en forme de materiaux et application de ce procede a la mise en forme de materiaux en microgravite |
JPS5858348A (ja) * | 1981-10-05 | 1983-04-06 | 株式会社東洋パイルヒユ−ム管製作所 | 断熱複合板に於ける目地の施工法 |
JPS5858348U (ja) * | 1981-10-14 | 1983-04-20 | 三菱電機株式会社 | 電子冷却装置 |
US4459428A (en) * | 1982-04-28 | 1984-07-10 | Energy Conversion Devices, Inc. | Thermoelectric device and method of making same |
US4610754A (en) * | 1982-10-29 | 1986-09-09 | Westinghouse Electric Corp. | Method for growing crystals |
US4540550A (en) * | 1982-10-29 | 1985-09-10 | Westinghouse Electric Corp. | Apparatus for growing crystals |
DE3366718D1 (en) * | 1983-02-09 | 1986-11-13 | Commissariat Energie Atomique | Method of producing plates of metallic or semiconducting material by moulding without direct contact with the walls of the mould |
US4497973A (en) * | 1983-02-28 | 1985-02-05 | Ecd-Anr Energy Conversion Company | Thermoelectric device exhibiting decreased stress |
JPS6070720A (ja) * | 1983-09-27 | 1985-04-22 | Toshiba Corp | シリコン薄体製造装置 |
JPS6215842A (ja) * | 1985-07-12 | 1987-01-24 | Fujitsu Ltd | 電子装置の冷却構造 |
US4907060A (en) * | 1987-06-02 | 1990-03-06 | Nelson John L | Encapsulated thermoelectric heat pump and method of manufacture |
JPH01115812A (ja) * | 1987-10-28 | 1989-05-09 | Nippon Sheet Glass Co Ltd | シリコン薄板の製造装置 |
CN1051242A (zh) * | 1989-10-27 | 1991-05-08 | 吴鸿平 | 复合半导体温差致冷器 |
JPH0711178Y2 (ja) * | 1990-06-25 | 1995-03-15 | 大同ほくさん株式会社 | 多結晶シリコンシート製造装置におけるシリコン注入圧制御機構 |
US5031689A (en) * | 1990-07-31 | 1991-07-16 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Flexible thermal apparatus for mounting of thermoelectric cooler |
JPH07202275A (ja) * | 1993-06-28 | 1995-08-04 | Kiyoshi Yanagimachi | 電子冷却素子の集合体 |
DE4326662A1 (de) * | 1993-08-09 | 1995-02-23 | Rost Manfred Dr Rer Nat Habil | Flexible Peltierbatterie |
-
1996
- 1996-07-30 US US08/836,746 patent/US6097088A/en not_active Expired - Fee Related
- 1996-07-30 EP EP03007764A patent/EP1329538A2/de not_active Withdrawn
- 1996-07-30 WO PCT/JP1996/002145 patent/WO1997013284A1/ja active IP Right Grant
- 1996-07-30 WO PCT/JP1996/002144 patent/WO1997013010A1/ja active IP Right Grant
- 1996-07-30 EP EP96925133A patent/EP0795630B1/de not_active Expired - Lifetime
- 1996-07-30 DE DE69627299T patent/DE69627299T2/de not_active Expired - Fee Related
- 1996-07-30 DE DE69630014T patent/DE69630014T2/de not_active Expired - Fee Related
- 1996-07-30 US US08/817,873 patent/US5885345A/en not_active Expired - Fee Related
- 1996-07-30 EP EP96925134A patent/EP0805501B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0805501A4 (de) | 1998-09-23 |
EP1329538A2 (de) | 2003-07-23 |
EP0805501B1 (de) | 2003-09-17 |
US5885345A (en) | 1999-03-23 |
EP0795630A4 (de) | 2000-05-10 |
WO1997013284A1 (en) | 1997-04-10 |
DE69627299D1 (de) | 2003-05-15 |
WO1997013010A1 (en) | 1997-04-10 |
DE69630014D1 (de) | 2003-10-23 |
EP0795630A1 (de) | 1997-09-17 |
EP0795630B1 (de) | 2003-04-09 |
DE69630014T2 (de) | 2004-06-09 |
US6097088A (en) | 2000-08-01 |
EP0805501A1 (de) | 1997-11-05 |
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