DE69622182D1 - METHOD FOR PRODUCING OBJECTS BY EPITACTICAL GROWTH AND DEVICE - Google Patents

METHOD FOR PRODUCING OBJECTS BY EPITACTICAL GROWTH AND DEVICE

Info

Publication number
DE69622182D1
DE69622182D1 DE69622182T DE69622182T DE69622182D1 DE 69622182 D1 DE69622182 D1 DE 69622182D1 DE 69622182 T DE69622182 T DE 69622182T DE 69622182 T DE69622182 T DE 69622182T DE 69622182 D1 DE69622182 D1 DE 69622182D1
Authority
DE
Germany
Prior art keywords
epitactical
growth
producing objects
objects
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69622182T
Other languages
German (de)
Other versions
DE69622182T3 (en
DE69622182T2 (en
Inventor
Olle Kordina
Christer Hallin
Erik Janzen
Asko Vehanen
Rositza Yakimova
Marko Tuominen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Norstel Norrk?ping Se AB
Original Assignee
ABB Research Ltd Switzerland
Okmetic Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE9503428A external-priority patent/SE9503428D0/en
Application filed by ABB Research Ltd Switzerland, Okmetic Oy filed Critical ABB Research Ltd Switzerland
Publication of DE69622182D1 publication Critical patent/DE69622182D1/en
Application granted granted Critical
Publication of DE69622182T2 publication Critical patent/DE69622182T2/en
Publication of DE69622182T3 publication Critical patent/DE69622182T3/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69622182T 1995-10-04 1996-10-02 PROCESS FOR PRODUCING OBJECTS BY EPITACTIC GROWTH AND DEVICE Expired - Lifetime DE69622182T3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9503428 1995-10-04
SE9503428A SE9503428D0 (en) 1995-10-04 1995-10-04 A method for growing epitaxially and a device for such growth
PCT/SE1996/001232 WO1997013013A1 (en) 1995-10-04 1996-10-02 A method for epitaxially growing objects and a device for such a growth

Publications (3)

Publication Number Publication Date
DE69622182D1 true DE69622182D1 (en) 2002-08-08
DE69622182T2 DE69622182T2 (en) 2003-01-30
DE69622182T3 DE69622182T3 (en) 2007-03-01

Family

ID=20399689

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69622182T Expired - Lifetime DE69622182T3 (en) 1995-10-04 1996-10-02 PROCESS FOR PRODUCING OBJECTS BY EPITACTIC GROWTH AND DEVICE

Country Status (3)

Country Link
JP (1) JP4222630B2 (en)
AT (1) ATE220132T1 (en)
DE (1) DE69622182T3 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4664464B2 (en) * 2000-04-06 2011-04-06 新日本製鐵株式会社 Silicon carbide single crystal wafer with small mosaic
JP2002012500A (en) * 2000-06-21 2002-01-15 Showa Denko Kk Method of and device for producing silicon carbide single crystal, and silicon carbide single crystal
JP5152293B2 (en) * 2010-10-08 2013-02-27 新日鐵住金株式会社 Manufacturing method of silicon carbide single crystal wafer with small mosaic property
CN113026099A (en) * 2021-03-05 2021-06-25 广州爱思威科技股份有限公司 Silicon carbide single crystal growth control device and control method

Also Published As

Publication number Publication date
ATE220132T1 (en) 2002-07-15
JPH11513353A (en) 1999-11-16
DE69622182T3 (en) 2007-03-01
JP4222630B2 (en) 2009-02-12
DE69622182T2 (en) 2003-01-30

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: OKMETIC OYJ, VANTAA, FI

8363 Opposition against the patent
8327 Change in the person/name/address of the patent owner

Owner name: NORSTEL AB, LINKOEPING, SE

8366 Restricted maintained after opposition proceedings
8327 Change in the person/name/address of the patent owner

Owner name: NORSTEL AB, NORRK?PING, SE