DE69606123D1 - Verfahren zur Herstellung von Wismutverbindungen und Wismutverbindungen - Google Patents
Verfahren zur Herstellung von Wismutverbindungen und WismutverbindungenInfo
- Publication number
- DE69606123D1 DE69606123D1 DE69606123T DE69606123T DE69606123D1 DE 69606123 D1 DE69606123 D1 DE 69606123D1 DE 69606123 T DE69606123 T DE 69606123T DE 69606123 T DE69606123 T DE 69606123T DE 69606123 D1 DE69606123 D1 DE 69606123D1
- Authority
- DE
- Germany
- Prior art keywords
- bismuth compounds
- producing
- compounds
- bismuth
- producing bismuth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000001622 bismuth compounds Chemical class 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
- C01G33/006—Compounds containing, besides niobium, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G35/00—Compounds of tantalum
- C01G35/006—Compounds containing, besides tantalum, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/20—Two-dimensional structures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/36—Three-dimensional structures pyrochlore-type (A2B2O7)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21369495A JP3500787B2 (ja) | 1995-08-22 | 1995-08-22 | ビスマス化合物の製造方法とビスマス化合物の誘電体物質 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69606123D1 true DE69606123D1 (de) | 2000-02-17 |
DE69606123T2 DE69606123T2 (de) | 2000-08-24 |
Family
ID=16643449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69606123T Expired - Fee Related DE69606123T2 (de) | 1995-08-22 | 1996-08-20 | Verfahren zur Herstellung von Wismutverbindungen und Wismutverbindungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5976624A (de) |
EP (1) | EP0760400B1 (de) |
JP (1) | JP3500787B2 (de) |
KR (1) | KR100445625B1 (de) |
DE (1) | DE69606123T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100378070B1 (ko) * | 1995-03-30 | 2003-08-21 | 소니 가부시끼 가이샤 | 비스무트층상 화합물의 제조방법 |
DE19743269A1 (de) * | 1997-09-30 | 1999-04-01 | Siemens Ag | Herstellverfahren für eine Bi-haltige keramische Schicht |
WO2000034550A2 (en) * | 1998-12-09 | 2000-06-15 | Infineon Technologies Ag | Cvd processes using bi aryl |
US6680269B2 (en) | 2000-06-29 | 2004-01-20 | The Penn State Research Foundation | Bismuth pyrochlore microwave dielectric materials |
JP5233778B2 (ja) * | 2009-03-24 | 2013-07-10 | 株式会社デンソー | 異方形状粉末及び結晶配向セラミックスの製造方法 |
JP6353644B2 (ja) * | 2013-09-27 | 2018-07-04 | 国立大学法人北陸先端科学技術大学院大学 | 酸化物誘電体及びその製造方法、酸化物誘電体の前駆体、並びに固体電子装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57158369A (en) * | 1981-03-26 | 1982-09-30 | Semiconductor Energy Lab Co Ltd | Formation of dielectric film by plasma vapor phase method |
CA2037481C (en) * | 1990-03-08 | 1998-11-10 | Noriki Hayashi | Method of preparing oxide superconducting film |
US5423285A (en) * | 1991-02-25 | 1995-06-13 | Olympus Optical Co., Ltd. | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications |
JPH05147933A (ja) * | 1991-11-29 | 1993-06-15 | Ube Ind Ltd | アモルフアス強誘電体酸化物材料及びその製造方法 |
US5426075A (en) * | 1994-06-15 | 1995-06-20 | Ramtron International Corporation | Method of manufacturing ferroelectric bismuth layered oxides |
US5527567A (en) * | 1994-09-02 | 1996-06-18 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
JP3116768B2 (ja) * | 1995-04-06 | 2000-12-11 | ソニー株式会社 | ビスマス層状化合物の製法 |
-
1995
- 1995-08-22 JP JP21369495A patent/JP3500787B2/ja not_active Expired - Fee Related
-
1996
- 1996-08-20 US US08/700,030 patent/US5976624A/en not_active Expired - Fee Related
- 1996-08-20 EP EP96113346A patent/EP0760400B1/de not_active Expired - Lifetime
- 1996-08-20 DE DE69606123T patent/DE69606123T2/de not_active Expired - Fee Related
- 1996-08-21 KR KR1019960034698A patent/KR100445625B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0760400B1 (de) | 2000-01-12 |
KR970013370A (ko) | 1997-03-29 |
JP3500787B2 (ja) | 2004-02-23 |
EP0760400A3 (de) | 1997-04-02 |
US5976624A (en) | 1999-11-02 |
JPH0959021A (ja) | 1997-03-04 |
KR100445625B1 (ko) | 2004-11-16 |
DE69606123T2 (de) | 2000-08-24 |
EP0760400A2 (de) | 1997-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |