DE69521718D1 - Optische speichereinheit mit verweigtem fotozyklus - Google Patents

Optische speichereinheit mit verweigtem fotozyklus

Info

Publication number
DE69521718D1
DE69521718D1 DE69521718T DE69521718T DE69521718D1 DE 69521718 D1 DE69521718 D1 DE 69521718D1 DE 69521718 T DE69521718 T DE 69521718T DE 69521718 T DE69521718 T DE 69521718T DE 69521718 D1 DE69521718 D1 DE 69521718D1
Authority
DE
Germany
Prior art keywords
photocycle
rejected
storage unit
optical storage
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69521718T
Other languages
English (en)
Other versions
DE69521718T2 (de
Inventor
Robert Birge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Syracuse University
Original Assignee
Syracuse University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Syracuse University filed Critical Syracuse University
Publication of DE69521718D1 publication Critical patent/DE69521718D1/de
Application granted granted Critical
Publication of DE69521718T2 publication Critical patent/DE69521718T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/041—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using photochromic storage elements
DE69521718T 1994-12-27 1995-12-26 Optische speichereinheit mit verweigtem fotozyklus Expired - Fee Related DE69521718T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/364,138 US5559732A (en) 1994-12-27 1994-12-27 Branched photocycle optical memory device
PCT/US1995/017003 WO1996021228A2 (en) 1994-12-27 1995-12-26 Branched photocycle optical memory device

Publications (2)

Publication Number Publication Date
DE69521718D1 true DE69521718D1 (de) 2001-08-16
DE69521718T2 DE69521718T2 (de) 2002-05-08

Family

ID=23433182

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69521718T Expired - Fee Related DE69521718T2 (de) 1994-12-27 1995-12-26 Optische speichereinheit mit verweigtem fotozyklus

Country Status (4)

Country Link
US (1) US5559732A (de)
EP (1) EP0800701B1 (de)
DE (1) DE69521718T2 (de)
WO (1) WO1996021228A2 (de)

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US6072712A (en) * 1991-12-30 2000-06-06 Ioptics, Inc. Compact optical random access memory having a refractive-reflector lens
NO304859B1 (no) * 1997-06-06 1999-02-22 Opticom As Optisk logisk element og fremgangsmÕter til henholdsvis dets preparering og optiske adressering, samt anvendelse derav i en optisk logisk innretning
US5922843A (en) * 1996-10-15 1999-07-13 Syracuse University Analog bacteriorhodopsin molecules
GB2335780A (en) * 1998-03-23 1999-09-29 Hyrcynian Holdings Limited Optical data storage
HU9801249D0 (en) * 1998-05-28 1998-07-28 Bela Medvey Method and apparatus for spatial data storage
US6501571B1 (en) * 1999-04-12 2002-12-31 The Regents Of The University Of California Three-dimensional holographic stamping of multi-layer bit-oriented non-linear optical media
DE19961841A1 (de) * 1999-12-21 2001-06-28 Joergen Brosow Fälschungssicheres Informationsträgermaterial, daraus hergestellter Informationsträger und Vorrichtung zu dessen Prüfung
US20030120858A1 (en) 2000-09-15 2003-06-26 Matrix Semiconductor, Inc. Memory devices and methods for use therewith
AU2002222453A1 (en) * 2000-12-07 2002-06-18 Consellation Trid Inc Apparatus for recording on and/or retrieval from fluorescent optical clear card
US6591394B2 (en) * 2000-12-22 2003-07-08 Matrix Semiconductor, Inc. Three-dimensional memory array and method for storing data bits and ECC bits therein
US7285464B2 (en) 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US8637366B2 (en) * 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US20050226067A1 (en) 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
WO2004061851A2 (en) 2002-12-19 2004-07-22 Matrix Semiconductor, Inc An improved method for making high-density nonvolatile memory
US7618850B2 (en) * 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
US7511352B2 (en) * 2003-05-19 2009-03-31 Sandisk 3D Llc Rail Schottky device and method of making
US20060187795A1 (en) * 2004-10-14 2006-08-24 Steve Redfield Branch photocycle technique for holographic recording in bacteriorhodopsin
US7307268B2 (en) * 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
US7800934B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
US8102694B2 (en) * 2007-06-25 2012-01-24 Sandisk 3D Llc Nonvolatile memory device containing carbon or nitrogen doped diode
US8072791B2 (en) * 2007-06-25 2011-12-06 Sandisk 3D Llc Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US7830697B2 (en) * 2007-06-25 2010-11-09 Sandisk 3D Llc High forward current diodes for reverse write 3D cell
US7684226B2 (en) * 2007-06-25 2010-03-23 Sandisk 3D Llc Method of making high forward current diodes for reverse write 3D cell
US7759666B2 (en) * 2007-06-29 2010-07-20 Sandisk 3D Llc 3D R/W cell with reduced reverse leakage
US7800939B2 (en) * 2007-06-29 2010-09-21 Sandisk 3D Llc Method of making 3D R/W cell with reduced reverse leakage
US7846782B2 (en) 2007-09-28 2010-12-07 Sandisk 3D Llc Diode array and method of making thereof
US8883719B2 (en) * 2008-01-16 2014-11-11 University Of Connecticut Bacteriorhodopsin protein variants and methods of use for long term data storage
US9023989B2 (en) * 2008-02-19 2015-05-05 University Of Connecticut Protein-based photovoltaics and methods of use
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
US8450835B2 (en) * 2008-04-29 2013-05-28 Sandisk 3D Llc Reverse leakage reduction and vertical height shrinking of diode with halo doping
US8563026B2 (en) * 2009-03-05 2013-10-22 University Of Connecticut Protein-based artificial retinas
US9208864B2 (en) 2013-10-14 2015-12-08 Toshiba America Electronic Components, Inc. Semiconductor memory with integrated biologic element
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof

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US3480918A (en) * 1965-04-14 1969-11-25 Midwest Research Inst Three-dimensional memory having photon excitable impurity semiconductor storage volume
US3518634A (en) * 1967-06-16 1970-06-30 Bell Telephone Labor Inc Optical memory with photoactive memory element
DE2148650A1 (de) * 1971-09-29 1973-04-05 Siemens Ag Verfahren zur phasenrichtigen integration von radar-pulsfolgen
US3851318A (en) * 1971-11-17 1974-11-26 Int Liquid Xtal Co Liquid crystal information storage and read-out system
US4078229A (en) * 1975-01-27 1978-03-07 Swanson Wyn K Three dimensional systems
DE2710166C2 (de) * 1977-03-09 1984-09-13 Philips Patentverwaltung Gmbh, 2000 Hamburg Mechanisch adressierter optischer Speicher
US4471470A (en) * 1977-12-01 1984-09-11 Formigraphic Engine Corporation Method and media for accessing data in three dimensions
US4288861A (en) * 1977-12-01 1981-09-08 Formigraphic Engine Corporation Three-dimensional systems
US4479199A (en) * 1981-03-23 1984-10-23 Friedlander Marc A Information storage system using a photon echo medium
US4633445A (en) * 1984-12-14 1986-12-30 Xerox Corporation Eraseable solid state optical memories
US4713795A (en) * 1985-10-29 1987-12-15 Kernforschungsanlage Julich Gmbh Optical switch, especially for information storage and retrieval
US4789965A (en) * 1986-10-31 1988-12-06 The University Of Utah Methods and compositions for recording optical information employing molecular pseudorotation
EP0396943B1 (de) * 1989-04-18 1995-07-05 Nippon Telegraph And Telephone Corporation Optisches Speichermedium und Speicherungsprozess
US5268862A (en) * 1989-04-25 1993-12-07 The Regents Of The Unversity Of California Three-dimensional optical memory
EP0438256B1 (de) * 1990-01-19 1997-08-27 Canon Kabushiki Kaisha Informationsverarbeitungssystem und Informationsverarbeitungsmethode
DE4007374A1 (de) * 1990-03-08 1991-09-12 Consortium Elektrochem Ind Verfahren zur verbesserung des signal-rausch-verhaeltnisses bei der holographie mit aufzeichnungsmedien auf bacteriorhodopsinbasis
JP2769393B2 (ja) * 1991-04-26 1998-06-25 直弘 丹野 立体光記録装置
US5289407A (en) * 1991-07-22 1994-02-22 Cornell Research Foundation, Inc. Method for three dimensional optical data storage and retrieval
US5253198A (en) * 1991-12-20 1993-10-12 Syracuse University Three-dimensional optical memory
US5353247A (en) * 1992-05-27 1994-10-04 Faris Sadeg M Optical mass storage system and memory cell incorporated therein
US5472759A (en) * 1993-12-16 1995-12-05 Martin Marietta Corporation Optical volume memory

Also Published As

Publication number Publication date
DE69521718T2 (de) 2002-05-08
EP0800701A2 (de) 1997-10-15
WO1996021228A3 (en) 1996-09-06
US5559732A (en) 1996-09-24
EP0800701B1 (de) 2001-07-11
WO1996021228A2 (en) 1996-07-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee