DE69509815T2 - Halbleiter-Druckwandler mit Polysilizium-Membran und Einkristall-Dehnungsmesstreifen und Herstellungsverfahren dazu - Google Patents

Halbleiter-Druckwandler mit Polysilizium-Membran und Einkristall-Dehnungsmesstreifen und Herstellungsverfahren dazu

Info

Publication number
DE69509815T2
DE69509815T2 DE69509815T DE69509815T DE69509815T2 DE 69509815 T2 DE69509815 T2 DE 69509815T2 DE 69509815 T DE69509815 T DE 69509815T DE 69509815 T DE69509815 T DE 69509815T DE 69509815 T2 DE69509815 T2 DE 69509815T2
Authority
DE
Germany
Prior art keywords
manufacturing process
single crystal
pressure transducer
strain gauges
semiconductor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69509815T
Other languages
English (en)
Other versions
DE69509815D1 (de
Inventor
Clifford D Fung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schneider Electric Systems USA Inc
Original Assignee
Foxboro Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxboro Co filed Critical Foxboro Co
Publication of DE69509815D1 publication Critical patent/DE69509815D1/de
Application granted granted Critical
Publication of DE69509815T2 publication Critical patent/DE69509815T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
DE69509815T 1994-03-18 1995-03-17 Halbleiter-Druckwandler mit Polysilizium-Membran und Einkristall-Dehnungsmesstreifen und Herstellungsverfahren dazu Expired - Fee Related DE69509815T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/210,422 US5589810A (en) 1991-03-28 1994-03-18 Semiconductor pressure sensor and related methodology with polysilicon diaphragm and single-crystal gage elements

Publications (2)

Publication Number Publication Date
DE69509815D1 DE69509815D1 (de) 1999-07-01
DE69509815T2 true DE69509815T2 (de) 2000-01-20

Family

ID=22782842

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69509815T Expired - Fee Related DE69509815T2 (de) 1994-03-18 1995-03-17 Halbleiter-Druckwandler mit Polysilizium-Membran und Einkristall-Dehnungsmesstreifen und Herstellungsverfahren dazu

Country Status (3)

Country Link
US (1) US5589810A (de)
EP (1) EP0672898B1 (de)
DE (1) DE69509815T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015117044B3 (de) * 2015-10-07 2016-12-08 Sensor-Technik Wiedemann Gmbh Elektrische Messanordnung zur Kraft- und/oder Druckmessung sowie Abstützeinrichtung mit einer derartigen elektrischen Messanordnung

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US6860153B2 (en) * 2000-02-22 2005-03-01 Simon Fraser University Gas pressure sensor based on short-distance heat conduction and method for fabricating same
US20110301569A1 (en) 2001-01-20 2011-12-08 Gordon Wayne Dyer Methods and apparatus for the CVCS
DE10241450A1 (de) 2002-09-06 2004-03-18 Robert Bosch Gmbh Verfahren zur Herstellung eines Bauteils mit einem Sensorelement, insbesondere eines Verformungssensors
US7211873B2 (en) * 2003-09-24 2007-05-01 Denso Corporation Sensor device having thin membrane and method of manufacturing the same
US7884432B2 (en) * 2005-03-22 2011-02-08 Ametek, Inc. Apparatus and methods for shielding integrated circuitry
US7737612B1 (en) 2005-05-25 2010-06-15 Maxim Integrated Products, Inc. BAW resonator bi-layer top electrode with zero etch undercut
JP4897318B2 (ja) * 2006-03-16 2012-03-14 ラピスセミコンダクタ株式会社 ピエゾ抵抗素子及びその製造方法
TWI305474B (en) * 2006-04-10 2009-01-11 Touch Micro System Tech Method of fabricating a diaphragm of a capacitive microphone device
US7600303B1 (en) 2006-05-25 2009-10-13 Maxim Integrated Products, Inc. BAW resonator bi-layer top electrode with zero etch undercut
US7612488B1 (en) * 2007-01-16 2009-11-03 Maxim Integrated Products, Inc. Method to control BAW resonator top electrode edge during patterning
US8240217B2 (en) * 2007-10-15 2012-08-14 Kavlico Corporation Diaphragm isolation forming through subtractive etching
JP5299254B2 (ja) * 2009-12-14 2013-09-25 三菱電機株式会社 半導体圧力センサ及びその製造方法
JP5295388B2 (ja) * 2009-12-25 2013-09-18 アルプス電気株式会社 フォースセンサ及びその製造方法
JP5445196B2 (ja) * 2010-02-10 2014-03-19 セイコーエプソン株式会社 応力検出素子、触覚センサー、および把持装置
JP5436404B2 (ja) * 2010-12-17 2014-03-05 三菱電機株式会社 半導体圧力センサ及びその製造方法
US9162876B2 (en) 2011-03-18 2015-10-20 Stmicroelectronics S.R.L. Process for manufacturing a membrane microelectromechanical device, and membrane microelectromechanical device
CN103674354A (zh) * 2012-08-30 2014-03-26 成都达瑞斯科技有限公司 高温多晶硅压力传感器
US9733142B2 (en) * 2012-10-17 2017-08-15 Kabushiki Kaisha Saginomiya Seisakusho Pressure sensor, and sensor unit provided with same
CN105241600B (zh) * 2015-08-17 2017-12-29 中国科学院地质与地球物理研究所 一种mems压力计芯片及其制造工艺
US9804046B2 (en) 2015-10-27 2017-10-31 DunAn Sensing, LLC Pressure sensor with support structure for non-silicon diaphragm
CN109060201A (zh) * 2018-08-25 2018-12-21 成都凯天电子股份有限公司 耐高温硅压阻压力敏感元件

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US3930823A (en) * 1972-03-14 1976-01-06 Kulite Semiconductor Products, Inc. High temperature transducers and housing including fabrication methods
US3858150A (en) * 1973-06-21 1974-12-31 Motorola Inc Polycrystalline silicon pressure sensor
US3938175A (en) * 1974-04-24 1976-02-10 General Motors Corporation Polycrystalline silicon pressure transducer
US4320664A (en) * 1980-02-25 1982-03-23 Texas Instruments Incorporated Thermally compensated silicon pressure sensor
US4510671A (en) * 1981-08-31 1985-04-16 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
US4456901A (en) * 1981-08-31 1984-06-26 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
DE3319605A1 (de) * 1983-05-30 1984-12-06 Siemens AG, 1000 Berlin und 8000 München Sensor mit polykristallinen silicium-widerstaenden
US4672354A (en) * 1985-12-05 1987-06-09 Kulite Semiconductor Products, Inc. Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
US4721938A (en) * 1986-12-22 1988-01-26 Delco Electronics Corporation Process for forming a silicon pressure transducer
US4994781A (en) * 1988-04-07 1991-02-19 Sahagen Armen N Pressure sensing transducer employing piezoresistive elements on sapphire
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
US5088329A (en) * 1990-05-07 1992-02-18 Sahagen Armen N Piezoresistive pressure transducer
US5165289A (en) * 1990-07-10 1992-11-24 Johnson Service Company Resonant mechanical sensor
US5189777A (en) * 1990-12-07 1993-03-02 Wisconsin Alumni Research Foundation Method of producing micromachined differential pressure transducers
US5074152A (en) * 1990-12-24 1991-12-24 Motorola, Inc. Piezoresistive transducer with low drift output voltage
US5220838A (en) * 1991-03-28 1993-06-22 The Foxboro Company Overpressure-protected, differential pressure sensor and method of making the same
US5316619A (en) * 1993-02-05 1994-05-31 Ford Motor Company Capacitive surface micromachine absolute pressure sensor and method for processing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015117044B3 (de) * 2015-10-07 2016-12-08 Sensor-Technik Wiedemann Gmbh Elektrische Messanordnung zur Kraft- und/oder Druckmessung sowie Abstützeinrichtung mit einer derartigen elektrischen Messanordnung

Also Published As

Publication number Publication date
US5589810A (en) 1996-12-31
EP0672898B1 (de) 1999-05-26
DE69509815D1 (de) 1999-07-01
EP0672898A2 (de) 1995-09-20
EP0672898A3 (de) 1996-06-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee