DE69508011T2 - Verfahren und Gerät zur Vakuumzerstaubung - Google Patents

Verfahren und Gerät zur Vakuumzerstaubung

Info

Publication number
DE69508011T2
DE69508011T2 DE69508011T DE69508011T DE69508011T2 DE 69508011 T2 DE69508011 T2 DE 69508011T2 DE 69508011 T DE69508011 T DE 69508011T DE 69508011 T DE69508011 T DE 69508011T DE 69508011 T2 DE69508011 T2 DE 69508011T2
Authority
DE
Germany
Prior art keywords
atomization method
vacuum atomization
vacuum
atomization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69508011T
Other languages
English (en)
Other versions
DE69508011D1 (de
Inventor
Peter A Sieck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Linde LLC
Original Assignee
BOC Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOC Group Inc filed Critical BOC Group Inc
Application granted granted Critical
Publication of DE69508011D1 publication Critical patent/DE69508011D1/de
Publication of DE69508011T2 publication Critical patent/DE69508011T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69508011T 1994-09-06 1995-09-04 Verfahren und Gerät zur Vakuumzerstaubung Expired - Fee Related DE69508011T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30111494A 1994-09-06 1994-09-06

Publications (2)

Publication Number Publication Date
DE69508011D1 DE69508011D1 (de) 1999-04-08
DE69508011T2 true DE69508011T2 (de) 1999-07-15

Family

ID=23162013

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508011T Expired - Fee Related DE69508011T2 (de) 1994-09-06 1995-09-04 Verfahren und Gerät zur Vakuumzerstaubung

Country Status (10)

Country Link
US (1) US5645699A (de)
EP (1) EP0701270B1 (de)
JP (1) JPH08170172A (de)
KR (1) KR960010566A (de)
CN (1) CN1126365A (de)
AU (1) AU2857595A (de)
CA (1) CA2156350A1 (de)
DE (1) DE69508011T2 (de)
TW (1) TW315980U (de)
ZA (1) ZA956811B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015104616A1 (de) * 2015-03-26 2016-09-29 Von Ardenne Gmbh Magnetronanordnung und Verfahren zum Betreiben einer Rohrmagnetronanordnung

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WO1996034124A1 (en) * 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
DE19610253C2 (de) * 1996-03-15 1999-01-14 Fraunhofer Ges Forschung Zerstäubungseinrichtung
DE19651378A1 (de) * 1996-12-11 1998-06-18 Leybold Systems Gmbh Vorrichtung zum Aufstäuben von dünnen Schichten auf flache Substrate
US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
SE511139C2 (sv) † 1997-11-20 1999-08-09 Hana Barankova Plasmabearbetningsapparat med vridbara magneter
US6093293A (en) * 1997-12-17 2000-07-25 Balzers Hochvakuum Ag Magnetron sputtering source
US6365010B1 (en) * 1998-11-06 2002-04-02 Scivac Sputtering apparatus and process for high rate coatings
US6488824B1 (en) 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
US6964731B1 (en) * 1998-12-21 2005-11-15 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6974629B1 (en) * 1999-08-06 2005-12-13 Cardinal Cg Company Low-emissivity, soil-resistant coating for glass surfaces
US6660365B1 (en) * 1998-12-21 2003-12-09 Cardinal Cg Company Soil-resistant coating for glass surfaces
AU746565B2 (en) * 1998-12-21 2002-05-02 Cardinal Cg Company Soil-resistant coating for glass surfaces
US6224718B1 (en) 1999-07-14 2001-05-01 Veeco Instruments, Inc. Target assembly for ion beam sputter deposition with multiple paddles each having targets on both sides
US6440280B1 (en) 2000-06-28 2002-08-27 Sola International, Inc. Multi-anode device and methods for sputter deposition
EP1322567B1 (de) 2000-09-11 2008-11-12 Cardinal CG Company Temporäre schutzverkleidungen
US6921579B2 (en) * 2000-09-11 2005-07-26 Cardinal Cg Company Temporary protective covers
US6902813B2 (en) * 2001-09-11 2005-06-07 Cardinal Cg Company Hydrophilic surfaces carrying temporary protective covers
DE10145201C1 (de) * 2001-09-13 2002-11-21 Fraunhofer Ges Forschung Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben
US20040115362A1 (en) * 2002-01-14 2004-06-17 Klause Hartig Photocatalytic sputtering targets and methods for the production and use thereof
US6736948B2 (en) * 2002-01-18 2004-05-18 Von Ardenne Anlagentechnik Gmbh Cylindrical AC/DC magnetron with compliant drive system and improved electrical and thermal isolation
US6919133B2 (en) 2002-03-01 2005-07-19 Cardinal Cg Company Thin film coating having transparent base layer
WO2003074442A1 (en) * 2002-03-01 2003-09-12 Cardinal Cg Company Thin film coating having transparent base layer
DE10216671A1 (de) * 2002-04-15 2003-12-18 Applied Films Gmbh & Co Kg Beschichtungsanlage
US20040129561A1 (en) * 2003-01-07 2004-07-08 Von Ardenne Anlagentechnik Gmbh Cylindrical magnetron magnetic array mid span support
US7014741B2 (en) * 2003-02-21 2006-03-21 Von Ardenne Anlagentechnik Gmbh Cylindrical magnetron with self cleaning target
US20050051422A1 (en) * 2003-02-21 2005-03-10 Rietzel James G. Cylindrical magnetron with self cleaning target
US20050224343A1 (en) * 2004-04-08 2005-10-13 Richard Newcomb Power coupling for high-power sputtering
EP1773729B1 (de) 2004-07-12 2007-11-07 Cardinal CG Company Wartungsarme beschichtungen
JP2008510186A (ja) * 2004-08-10 2008-04-03 日本板硝子株式会社 Ｌｃｄミラーシステム及び方法
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
US20060096855A1 (en) * 2004-11-05 2006-05-11 Richard Newcomb Cathode arrangement for atomizing a rotatable target pipe
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US20060278519A1 (en) * 2005-06-10 2006-12-14 Leszek Malaszewski Adaptable fixation for cylindrical magnetrons
US20060278524A1 (en) * 2005-06-14 2006-12-14 Stowell Michael W System and method for modulating power signals to control sputtering
US20060278521A1 (en) * 2005-06-14 2006-12-14 Stowell Michael W System and method for controlling ion density and energy using modulated power signals
WO2007003488A1 (en) * 2005-06-30 2007-01-11 Bekaert Advanced Coatings A module for coating both sides of a substrate in a single pass
US20070080056A1 (en) * 2005-10-07 2007-04-12 German John R Method and apparatus for cylindrical magnetron sputtering using multiple electron drift paths
US7842355B2 (en) * 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
US20070095281A1 (en) * 2005-11-01 2007-05-03 Stowell Michael W System and method for power function ramping of microwave liner discharge sources
CN101410931B (zh) * 2006-03-28 2011-02-16 贝卡尔特股份有限公司 涂覆设备
US7989094B2 (en) 2006-04-19 2011-08-02 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
KR101563197B1 (ko) 2007-09-14 2015-10-26 카디날 씨지 컴퍼니 관리 용이한 코팅 및 이의 제조방법
TWI400996B (zh) * 2008-02-14 2013-07-01 Applied Materials Inc 基板處理裝置
EP2091067A1 (de) 2008-02-14 2009-08-19 Applied Materials, Inc. Vorrichtung zur Verarbeitung eines Substrats
US8083911B2 (en) * 2008-02-14 2011-12-27 Applied Materials, Inc. Apparatus for treating a substrate
US8137517B1 (en) 2009-02-10 2012-03-20 Wd Media, Inc. Dual position DC magnetron assembly
DE102009017888B4 (de) * 2009-03-20 2013-01-17 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum Steuern einer Plasmadichteverteilung in einem Vakuumprozess
US20100236920A1 (en) * 2009-03-20 2010-09-23 Applied Materials, Inc. Deposition apparatus with high temperature rotatable target and method of operating thereof
KR20110137331A (ko) * 2009-03-20 2011-12-22 어플라이드 머티어리얼스, 인코포레이티드 고온의 회전가능한 타겟을 가진 증착 장치와 그 작동 방법
US8182662B2 (en) 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
US9388490B2 (en) 2009-10-26 2016-07-12 General Plasma, Inc. Rotary magnetron magnet bar and apparatus containing the same for high target utilization
JP2014058698A (ja) * 2010-12-15 2014-04-03 Canon Anelva Corp スパッタリング装置
DE102012206553A1 (de) 2012-04-20 2013-10-24 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum Steuern der Schichtdickenverteilung in einer Vakuumbeschichtung
US8674327B1 (en) 2012-05-10 2014-03-18 WD Media, LLC Systems and methods for uniformly implanting materials on substrates using directed magnetic fields
DE102012110284B3 (de) * 2012-10-26 2013-11-14 Von Ardenne Anlagentechnik Gmbh Sputterbeschichtungseinrichtung und Vakuumbeschichtungsanlage
KR102177209B1 (ko) * 2013-07-24 2020-11-11 삼성디스플레이 주식회사 스퍼터링 장치 및 이를 이용한 박막 형성 방법
DE102014103740B4 (de) * 2014-01-09 2018-11-15 VON ARDENNE Asset GmbH & Co. KG Sputteranordnung und Sputter-Verfahren
DE102014114237A1 (de) * 2014-09-30 2016-03-31 Von Ardenne Gmbh Beschichtungsanlage und Verfahren zur Abscheidung von Schichten mittels Magnetronsputtern
US10811236B2 (en) 2014-10-29 2020-10-20 General Plasma, Inc. Magnetic anode for sputter magnetron cathode
EP3032565A1 (de) * 2014-12-08 2016-06-15 Soleras Advanced Coatings bvba Vorrichtung mit zwei Endblöcken, Anordnung und Sputtersystem damit und Verfahren zur Bereitstellung von HF-Leistung in einem Zielrohr mit dieser Vorrichtung oder Anordnung
JP2017013041A (ja) 2014-12-22 2017-01-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 電気集塵機
WO2016126650A1 (en) * 2015-02-03 2016-08-11 Cardinal Cg Company Sputtering apparatus including gas distribution system
JP2016204705A (ja) * 2015-04-22 2016-12-08 キヤノントッキ株式会社 成膜装置及び成膜方法
EP3387163B1 (de) 2015-12-11 2020-04-29 Cardinal CG Company Verfahren zur beidseitigen beschichtung eines substrats
CN105986236A (zh) * 2016-06-27 2016-10-05 广东腾胜真空技术工程有限公司 一种低温沉积磁控溅射镀膜装置及方法
US10604442B2 (en) 2016-11-17 2020-03-31 Cardinal Cg Company Static-dissipative coating technology

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US4465575A (en) * 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US4466877A (en) * 1983-10-11 1984-08-21 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4478702A (en) * 1984-01-17 1984-10-23 Ppg Industries, Inc. Anode for magnetic sputtering apparatus
US4849087A (en) * 1988-02-11 1989-07-18 Southwall Technologies Apparatus for obtaining transverse uniformity during thin film deposition on extended substrate
US5178743A (en) * 1989-06-15 1993-01-12 Microelectronics And Computer Technology Corporation Cylindrical magnetron sputtering system
BE1003701A3 (fr) * 1990-06-08 1992-05-26 Saint Roch Glaceries Cathode rotative.
WO1992001081A1 (en) 1990-07-06 1992-01-23 The Boc Group, Inc. Method and apparatus for co-sputtering and cross-sputtering homogeneous films
US5106474A (en) 1990-11-21 1992-04-21 Viratec Thin Films, Inc. Anode structures for magnetron sputtering apparatus
US5108574A (en) * 1991-01-29 1992-04-28 The Boc Group, Inc. Cylindrical magnetron shield structure
JPH062123A (ja) * 1992-06-23 1994-01-11 Mitsubishi Heavy Ind Ltd スパッタリング成膜装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015104616A1 (de) * 2015-03-26 2016-09-29 Von Ardenne Gmbh Magnetronanordnung und Verfahren zum Betreiben einer Rohrmagnetronanordnung

Also Published As

Publication number Publication date
JPH08170172A (ja) 1996-07-02
EP0701270B1 (de) 1999-03-03
US5645699A (en) 1997-07-08
AU2857595A (en) 1996-03-21
ZA956811B (en) 1996-05-14
CN1126365A (zh) 1996-07-10
TW315980U (en) 1997-09-11
EP0701270A1 (de) 1996-03-13
CA2156350A1 (en) 1996-03-07
DE69508011D1 (de) 1999-04-08
KR960010566A (ko) 1996-04-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee