DE69431618T2 - Strahlungsempfindliches Material und Verfahren zur Herstellung eines Musters - Google Patents

Strahlungsempfindliches Material und Verfahren zur Herstellung eines Musters

Info

Publication number
DE69431618T2
DE69431618T2 DE1994631618 DE69431618T DE69431618T2 DE 69431618 T2 DE69431618 T2 DE 69431618T2 DE 1994631618 DE1994631618 DE 1994631618 DE 69431618 T DE69431618 T DE 69431618T DE 69431618 T2 DE69431618 T2 DE 69431618T2
Authority
DE
Germany
Prior art keywords
pattern
making
sensitive material
radiation sensitive
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1994631618
Other languages
English (en)
Other versions
DE69431618D1 (de
Inventor
Satoshi Takechi
Makoto Takahashi
Yuko Kaimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69431618D1 publication Critical patent/DE69431618D1/de
Publication of DE69431618T2 publication Critical patent/DE69431618T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/37—Thiols
    • C08K5/375—Thiols containing six-membered aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE1994631618 1993-12-28 1994-12-28 Strahlungsempfindliches Material und Verfahren zur Herstellung eines Musters Expired - Lifetime DE69431618T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33743493 1993-12-28

Publications (2)

Publication Number Publication Date
DE69431618D1 DE69431618D1 (de) 2002-12-05
DE69431618T2 true DE69431618T2 (de) 2003-04-03

Family

ID=18308598

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1994631618 Expired - Lifetime DE69431618T2 (de) 1993-12-28 1994-12-28 Strahlungsempfindliches Material und Verfahren zur Herstellung eines Musters

Country Status (3)

Country Link
EP (2) EP1248150A3 (de)
KR (1) KR0153807B1 (de)
DE (1) DE69431618T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200725B1 (en) 1995-06-28 2001-03-13 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
US6090526A (en) * 1996-09-13 2000-07-18 Shipley Company, L.L.C. Polymers and photoresist compositions
DE69821049T2 (de) 1997-05-09 2004-10-21 Fuji Photo Film Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung
EP0878738B1 (de) * 1997-05-12 2002-01-09 Fuji Photo Film Co., Ltd. Positiv arbeitende Resistzusammensetzung
US6077643A (en) * 1997-08-28 2000-06-20 Shipley Company, L.L.C. Polymers and photoresist compositions
US6057083A (en) 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
US6165674A (en) * 1998-01-15 2000-12-26 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
JPH11231541A (ja) * 1998-02-17 1999-08-27 Daicel Chem Ind Ltd 放射線感光材料及びそれを使用したパターン形成方法
KR100574316B1 (ko) * 1998-05-25 2006-04-27 다이셀 가가꾸 고교 가부시끼가이샤 포토레지스트용 수지 조성물
KR100574574B1 (ko) * 1998-08-26 2006-04-28 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 내식막 조성물
US6136501A (en) * 1998-08-28 2000-10-24 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
WO2000016160A1 (fr) * 1998-09-10 2000-03-23 Toray Industries, Inc. Composition radiosensible positive
KR100441734B1 (ko) * 1998-11-02 2004-08-04 신에쓰 가가꾸 고교 가부시끼가이샤 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법
KR20000047909A (ko) * 1998-12-10 2000-07-25 마티네즈 길러모 이타콘산 무수물 중합체 및 이를 함유하는 포토레지스트조성물
US6770413B1 (en) 1999-01-12 2004-08-03 Shipley Company, L.L.C. Hydroxyphenyl copolymers and photoresists comprising same
US6692888B1 (en) 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
US6492086B1 (en) * 1999-10-08 2002-12-10 Shipley Company, L.L.C. Phenolic/alicyclic copolymers and photoresists
TWI225184B (en) 2000-01-17 2004-12-11 Shinetsu Chemical Co Chemical amplification type resist composition
US6379861B1 (en) * 2000-02-22 2002-04-30 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
JP3502327B2 (ja) * 2000-04-19 2004-03-02 松下電器産業株式会社 パターン形成材料及びパターン形成方法
US6306554B1 (en) 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
US6946233B2 (en) * 2001-07-24 2005-09-20 Shin-Etsu Chemical Co., Ltd. Polymer, resist material and patterning method
WO2003017002A1 (fr) * 2001-08-20 2003-02-27 Nissan Chemical Industries, Ltd. Composition permettant la formation d'un film anti-reflechissant destine a etre utilise en lithographie
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
TWI477909B (zh) 2006-01-24 2015-03-21 Fujifilm Corp 正型感光性組成物及使用它之圖案形成方法
JP2007225647A (ja) 2006-02-21 2007-09-06 Tokyo Ohka Kogyo Co Ltd 超臨界現像プロセス用レジスト組成物
EP1835342A3 (de) * 2006-03-14 2008-06-04 FUJIFILM Corporation Positive Resistzusammensetzung und Verfahren zur Strukturformung damit
CN103885300B (zh) * 2014-03-19 2016-01-27 南京晶奥微光电技术有限公司 一种疏水表面光刻工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2881969B2 (ja) * 1990-06-05 1999-04-12 富士通株式会社 放射線感光レジストとパターン形成方法
EP0476865A1 (de) * 1990-08-31 1992-03-25 Wako Pure Chemical Industries Ltd Resistmaterial und Verfahren zur Herstellung eines Bildes unter Verwendung desselben
JPH04184345A (ja) * 1990-11-19 1992-07-01 Fujitsu Ltd レジストパターンの形成方法
US5102771A (en) * 1990-11-26 1992-04-07 Minnesota Mining And Manufacturing Company Photosensitive materials
JPH04350657A (ja) * 1991-05-28 1992-12-04 Shin Etsu Chem Co Ltd レジスト材
US5318850A (en) * 1991-11-27 1994-06-07 General Electric Company UV curable abrasion-resistant coatings with improved weatherability

Also Published As

Publication number Publication date
EP0663616B1 (de) 2002-10-30
EP1248150A2 (de) 2002-10-09
DE69431618D1 (de) 2002-12-05
KR0153807B1 (ko) 1998-11-16
EP0663616A3 (de) 1997-07-16
EP1248150A3 (de) 2003-11-05
EP0663616A2 (de) 1995-07-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE