DE69424190T2 - Elektromechanischer wandler - Google Patents

Elektromechanischer wandler

Info

Publication number
DE69424190T2
DE69424190T2 DE69424190T DE69424190T DE69424190T2 DE 69424190 T2 DE69424190 T2 DE 69424190T2 DE 69424190 T DE69424190 T DE 69424190T DE 69424190 T DE69424190 T DE 69424190T DE 69424190 T2 DE69424190 T2 DE 69424190T2
Authority
DE
Germany
Prior art keywords
electromechanical converter
electromechanical
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69424190T
Other languages
English (en)
Other versions
DE69424190D1 (de
Inventor
Kazimierz Gimzewski
Rudolf Schlittler
Edward Welland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69424190D1 publication Critical patent/DE69424190D1/de
Publication of DE69424190T2 publication Critical patent/DE69424190T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q20/00—Monitoring the movement or position of the probe
    • G01Q20/04—Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K5/00—Measuring temperature based on the expansion or contraction of a material
    • G01K5/48—Measuring temperature based on the expansion or contraction of a material the material being a solid
    • G01K5/56—Measuring temperature based on the expansion or contraction of a material the material being a solid constrained so that expansion or contraction causes a deformation of the solid
    • G01K5/62—Measuring temperature based on the expansion or contraction of a material the material being a solid constrained so that expansion or contraction causes a deformation of the solid the solid body being formed of compounded strips or plates, e.g. bimetallic strip
    • G01K5/70—Measuring temperature based on the expansion or contraction of a material the material being a solid constrained so that expansion or contraction causes a deformation of the solid the solid body being formed of compounded strips or plates, e.g. bimetallic strip specially adapted for indicating or recording
    • G01K5/72—Measuring temperature based on the expansion or contraction of a material the material being a solid constrained so that expansion or contraction causes a deformation of the solid the solid body being formed of compounded strips or plates, e.g. bimetallic strip specially adapted for indicating or recording with electric transmission means for final indication
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/14—Particular materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
    • Y10S977/721—On a silicon substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
    • Y10S977/837—Piezoelectric property of nanomaterial
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/85—Scanning probe control process
    • Y10S977/851—Particular movement or positioning of scanning tip
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/863—Atomic force probe

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Radiology & Medical Imaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
DE69424190T 1994-09-12 1994-09-12 Elektromechanischer wandler Expired - Lifetime DE69424190T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP1994/003052 WO1996008701A1 (en) 1994-09-12 1994-09-12 Electromechanical transducer

Publications (2)

Publication Number Publication Date
DE69424190D1 DE69424190D1 (de) 2000-05-31
DE69424190T2 true DE69424190T2 (de) 2000-11-23

Family

ID=8165888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69424190T Expired - Lifetime DE69424190T2 (de) 1994-09-12 1994-09-12 Elektromechanischer wandler

Country Status (5)

Country Link
US (1) US5780727A (de)
EP (1) EP0783670B1 (de)
JP (1) JP3055175B2 (de)
DE (1) DE69424190T2 (de)
WO (1) WO1996008701A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10114665A1 (de) * 2001-03-23 2002-09-26 Bernhard Trier Drucksensor mit Membran

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6006594A (en) * 1994-05-11 1999-12-28 Dr. Khaled Und Dr. Miles Haines Gesellschaft Burgerlichen Rechts Scanning probe microscope head with signal processing circuit
US5844238A (en) * 1996-03-27 1998-12-01 David Sarnoff Research Center, Inc. Infrared imager using room temperature capacitance sensor
US5796152A (en) * 1997-01-24 1998-08-18 Roxburgh Ltd. Cantilevered microstructure
DE19825761C2 (de) * 1998-06-09 2001-02-08 Fraunhofer Ges Forschung Vorrichtung zum Erfassen einer Dehnung und/oder einer Stauchung eines Körpers
US6140646A (en) * 1998-12-17 2000-10-31 Sarnoff Corporation Direct view infrared MEMS structure
US6420706B1 (en) 1999-01-08 2002-07-16 Sarnoff Corporation Optical detectors using nulling for high linearity and large dynamic range
JP2000266657A (ja) * 1999-03-16 2000-09-29 Seiko Instruments Inc 自己励振型カンチレバー
US6649823B2 (en) * 1999-05-04 2003-11-18 Neokismet, L.L.C. Gas specie electron-jump chemical energy converter
US7371962B2 (en) * 1999-05-04 2008-05-13 Neokismet, Llc Diode energy converter for chemical kinetic electron energy transfer
US7223914B2 (en) * 1999-05-04 2007-05-29 Neokismet Llc Pulsed electron jump generator
US6114620A (en) * 1999-05-04 2000-09-05 Neokismet, L.L.C. Pre-equilibrium chemical reaction energy converter
US6678305B1 (en) * 1999-05-04 2004-01-13 Noekismet, L.L.C. Surface catalyst infra red laser
US6392233B1 (en) 2000-08-10 2002-05-21 Sarnoff Corporation Optomechanical radiant energy detector
KR100393188B1 (ko) * 2000-12-29 2003-07-31 삼성전자주식회사 다초점 렌즈를 이용한 위상공액 홀로그래픽 정보 저장장치 및 정보 저장 방법
US6593666B1 (en) * 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
US6866819B1 (en) 2001-11-13 2005-03-15 Raytheon Company Sensor for detecting small concentrations of a target matter
TWI266877B (en) * 2003-05-28 2006-11-21 Au Optronics Corp Capacitive acceleration sensor
US7148579B2 (en) 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US20050115329A1 (en) * 2003-10-23 2005-06-02 Gregory Otto J. High temperature strain gages
GB0328054D0 (en) * 2003-12-04 2004-01-07 Council Cent Lab Res Councils Fluid probe
US7104134B2 (en) * 2004-03-05 2006-09-12 Agilent Technologies, Inc. Piezoelectric cantilever pressure sensor
US7497133B2 (en) 2004-05-24 2009-03-03 Drexel University All electric piezoelectric finger sensor (PEFS) for soft material stiffness measurement
WO2007024204A2 (en) 2004-07-19 2007-03-01 Ambient Systems, Inc. Nanometer-scale electrostatic and electromagnetic motors and generators
WO2007012028A2 (en) * 2005-07-19 2007-01-25 Pinkerton Joseph P Heat activated nanometer-scale pump
EP3614442A3 (de) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement mit halbleiteroxidschicht und herstellungsverfahren dafür
GB0605273D0 (en) * 2006-03-16 2006-04-26 Council Cent Lab Res Councils Fluid robe
US8481335B2 (en) * 2006-11-27 2013-07-09 Drexel University Specificity and sensitivity enhancement in cantilever sensing
US7992431B2 (en) * 2006-11-28 2011-08-09 Drexel University Piezoelectric microcantilevers and uses in atomic force microscopy
EP2100125A4 (de) 2006-11-28 2012-02-15 Univ Drexel Piezoelektrische mikrocantilever-sensoren für biosensorik
JP2010518380A (ja) * 2007-02-01 2010-05-27 ドレクセル・ユニバーシティー センサー用途向けハンドヘルド型位相シフト検出器
US7839028B2 (en) * 2007-04-03 2010-11-23 CJP IP Holding, Ltd. Nanoelectromechanical systems and methods for making the same
GB0716202D0 (en) 2007-08-11 2007-09-26 Microvisk Ltd Improved fluid probe
WO2009079154A2 (en) * 2007-11-23 2009-06-25 Drexel University Lead-free piezoelectric ceramic films and a method for making thereof
WO2009126378A2 (en) 2008-03-11 2009-10-15 Drexel University Enhanced detection sensitivity with piezoelectric microcantilever sensors
WO2009140660A2 (en) * 2008-05-16 2009-11-19 Drexel University System and method for evaluating tissue
US20100116038A1 (en) * 2008-11-12 2010-05-13 International Business Machines Corporation Feedback- enhanced thermo-electric topography sensing
US8349611B2 (en) * 2009-02-17 2013-01-08 Leversense Llc Resonant sensors and methods of use thereof for the determination of analytes
US8722427B2 (en) * 2009-10-08 2014-05-13 Drexel University Determination of dissociation constants using piezoelectric microcantilevers
US20110086368A1 (en) * 2009-10-08 2011-04-14 Drexel University Method for immune response detection
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
JP5862567B2 (ja) * 2010-08-24 2016-02-16 日本電気株式会社 振動センサ
EP2458354A1 (de) * 2010-11-24 2012-05-30 Fei Company Verfahren zum Messen der Temperatur einer Probe in einer optischen Vorrichtung mit geladenen Partikeln
US20120304758A1 (en) * 2011-05-31 2012-12-06 Baker Hughes Incorporated Low-frequency viscosity, density, and viscoelasticity sensor for downhole applications
US9437892B2 (en) 2012-07-26 2016-09-06 Quswami, Inc. System and method for converting chemical energy into electrical energy using nano-engineered porous network materials
US9311944B2 (en) * 2013-11-01 2016-04-12 Seagate Technology Llc Recording head with piezoelectric contact sensor
CA3006938C (en) 2014-12-10 2023-08-15 Paul D. Okulov Micro electro-mechanical strain displacement sensor and usage monitoring system
US9960715B1 (en) 2016-03-22 2018-05-01 The United States Of America, As Represented By The Secretary Of The Navy Light activated piezoelectric converter
WO2018148510A1 (en) 2017-02-09 2018-08-16 Nextinput, Inc. Integrated piezoresistive and piezoelectric fusion force sensor
WO2018148503A1 (en) 2017-02-09 2018-08-16 Nextinput, Inc. Integrated digital force sensors and related methods of manufacture
US11243126B2 (en) * 2017-07-27 2022-02-08 Nextinput, Inc. Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
WO2019079420A1 (en) 2017-10-17 2019-04-25 Nextinput, Inc. SHIFT TEMPERATURE COEFFICIENT COMPENSATION FOR FORCE SENSOR AND STRAIN GAUGE
US11874185B2 (en) 2017-11-16 2024-01-16 Nextinput, Inc. Force attenuator for force sensor
DE102018103180A1 (de) * 2018-02-13 2019-08-14 First Sensor AG Anordnung für einen halbleiterbasierten Drucksensorchip und Drucksensorchip
US11255191B2 (en) * 2020-05-20 2022-02-22 Halliburton Energy Services, Inc. Methods to characterize wellbore fluid composition and provide optimal additive dosing using MEMS technology
US11060400B1 (en) 2020-05-20 2021-07-13 Halliburton Energy Services, Inc. Methods to activate downhole tools
US11255189B2 (en) 2020-05-20 2022-02-22 Halliburton Energy Services, Inc. Methods to characterize subterranean fluid composition and adjust operating conditions using MEMS technology
CN112097946B (zh) * 2020-09-15 2021-09-28 大连理工大学 一体化柔性温度和压力传感器及其制备方法和用于非平面温度测量的***

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3351786A (en) * 1965-08-06 1967-11-07 Univ California Piezoelectric-semiconductor, electromechanical transducer
US3585415A (en) * 1969-10-06 1971-06-15 Univ California Stress-strain transducer charge coupled to a piezoelectric material
US4378510A (en) * 1980-07-17 1983-03-29 Motorola Inc. Miniaturized accelerometer with piezoelectric FET
US4480488A (en) * 1982-02-19 1984-11-06 The General Electric Company, P.L.C. Force sensor with a piezoelectric FET
GB8408722D0 (en) * 1984-04-04 1984-05-16 Berkel Patent Nv Sensor devices
DE68926601T2 (de) * 1988-09-02 1997-01-23 Honda Motor Co Ltd Halbleitermessaufnehmer
JPH06194381A (ja) * 1992-12-24 1994-07-15 Murata Mfg Co Ltd 加速度センサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10114665A1 (de) * 2001-03-23 2002-09-26 Bernhard Trier Drucksensor mit Membran

Also Published As

Publication number Publication date
JPH10508431A (ja) 1998-08-18
EP0783670A1 (de) 1997-07-16
WO1996008701A1 (en) 1996-03-21
US5780727A (en) 1998-07-14
EP0783670B1 (de) 2000-04-26
JP3055175B2 (ja) 2000-06-26
DE69424190D1 (de) 2000-05-31

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: DUSCHER, R., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 7