DE69405002D1 - Verfahren zur herstellung von diamant- und diamantartigen beschichtungen - Google Patents
Verfahren zur herstellung von diamant- und diamantartigen beschichtungenInfo
- Publication number
- DE69405002D1 DE69405002D1 DE69405002T DE69405002T DE69405002D1 DE 69405002 D1 DE69405002 D1 DE 69405002D1 DE 69405002 T DE69405002 T DE 69405002T DE 69405002 T DE69405002 T DE 69405002T DE 69405002 D1 DE69405002 D1 DE 69405002D1
- Authority
- DE
- Germany
- Prior art keywords
- diamond
- coatings
- producing
- producing diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/276—Diamond only using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
- Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9319627A GB2282390B (en) | 1993-09-23 | 1993-09-23 | Method for obtaining diamond and diamond-like films |
PCT/EP1994/003160 WO1995008657A1 (en) | 1993-09-23 | 1994-09-21 | Method for obtaining diamond and diamond-like films |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69405002D1 true DE69405002D1 (de) | 1997-09-18 |
DE69405002T2 DE69405002T2 (de) | 1997-12-11 |
Family
ID=10742398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69405002T Expired - Fee Related DE69405002T2 (de) | 1993-09-23 | 1994-09-21 | Verfahren zur herstellung von diamant- und diamantartigen beschichtungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5667852A (de) |
EP (1) | EP0720665B1 (de) |
DE (1) | DE69405002T2 (de) |
GB (1) | GB2282390B (de) |
WO (1) | WO1995008657A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6592839B2 (en) * | 1991-11-25 | 2003-07-15 | The University Of Chicago | Tailoring nanocrystalline diamond film properties |
US20100297391A1 (en) * | 2004-02-25 | 2010-11-25 | General Nanotechnoloy Llc | Diamond capsules and methods of manufacture |
US7309446B1 (en) * | 2004-02-25 | 2007-12-18 | Metadigm Llc | Methods of manufacturing diamond capsules |
US9470485B1 (en) | 2004-03-29 | 2016-10-18 | Victor B. Kley | Molded plastic cartridge with extended flash tube, sub-sonic cartridges, and user identification for firearms and site sensing fire control |
US7939367B1 (en) * | 2008-12-18 | 2011-05-10 | Crystallume Corporation | Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate |
US9921017B1 (en) | 2013-03-15 | 2018-03-20 | Victor B. Kley | User identification for weapons and site sensing fire control |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4645977A (en) * | 1984-08-31 | 1987-02-24 | Matsushita Electric Industrial Co., Ltd. | Plasma CVD apparatus and method for forming a diamond like carbon film |
JPH0622719B2 (ja) * | 1985-05-13 | 1994-03-30 | 小野田セメント株式会社 | 複ト−チ型プラズマ溶射方法及びその装置 |
JPS63107898A (ja) * | 1986-10-23 | 1988-05-12 | Natl Inst For Res In Inorg Mater | プラズマを用いるダイヤモンドの合成法 |
DE3884653T2 (de) * | 1987-04-03 | 1994-02-03 | Fujitsu Ltd | Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant. |
US5094878A (en) * | 1989-06-21 | 1992-03-10 | Nippon Soken, Inc. | Process for forming diamond film |
JPH03111577A (ja) * | 1989-09-26 | 1991-05-13 | Idemitsu Petrochem Co Ltd | マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法 |
US5260106A (en) * | 1990-08-03 | 1993-11-09 | Fujitsu Limited | Method for forming diamond films by plasma jet CVD |
JP2938552B2 (ja) * | 1990-10-17 | 1999-08-23 | 富士通株式会社 | コーティング膜の製造方法およびコーティング膜の製造装置 |
JP3166226B2 (ja) * | 1991-07-10 | 2001-05-14 | 住友電気工業株式会社 | ダイヤモンドの製造法及び製造装置 |
-
1993
- 1993-09-23 GB GB9319627A patent/GB2282390B/en not_active Expired - Fee Related
-
1994
- 1994-09-21 US US08/619,718 patent/US5667852A/en not_active Expired - Fee Related
- 1994-09-21 DE DE69405002T patent/DE69405002T2/de not_active Expired - Fee Related
- 1994-09-21 WO PCT/EP1994/003160 patent/WO1995008657A1/en active IP Right Grant
- 1994-09-21 EP EP94927637A patent/EP0720665B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1995008657A1 (en) | 1995-03-30 |
GB2282390A (en) | 1995-04-05 |
US5667852A (en) | 1997-09-16 |
EP0720665A1 (de) | 1996-07-10 |
EP0720665B1 (de) | 1997-08-13 |
GB2282390B (en) | 1997-04-30 |
GB9319627D0 (en) | 1993-11-10 |
DE69405002T2 (de) | 1997-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |