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1998-10-09 |
Commissariat Energie Atomique |
Transistor mos a puits quantique et procedes de fabrication de celui-ci
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2000-11-24 |
2004-02-19 |
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이 쓰리 데이터 프레임 펄스 위치 검출 장치
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2001-05-21 |
2006-10-24 |
The Regents Of The University Of Colorado, A Body Corporate |
Interconnected high speed electron tunneling devices
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2001-05-21 |
2005-11-22 |
The Regents Of The University Of Colorado |
Terahertz interconnect system and applications
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2001-05-21 |
2003-03-18 |
The Regents Of The University Of Colorado |
Metal-oxide electron tunneling device for solar energy conversion
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2001-05-21 |
2008-06-17 |
The Regents Of The University Of Colorado |
Metal-insulator varactor devices
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2001-05-21 |
2007-02-06 |
Regents Of The University Of Colorado |
Thin-film transistors based on tunneling structures and applications
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2001-05-21 |
2003-05-13 |
The Regents Of The University Of Colorado |
High speed electron tunneling device and applications
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2002-12-09 |
2005-12-27 |
Progressant Technologies, Inc. |
Process for controlling performance characteristics of a negative differential resistance (NDR) device
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2003-06-26 |
2004-12-14 |
Rj Mears, Llc |
Method for making semiconductor device including band-engineered superlattice
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2004-10-12 |
2008-03-14 |
Commissariat Energie Atomique |
Procede de realisation d'heterostructures resonnantes a transport planaire
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2010-12-15 |
日产自动车株式会社 |
半导体装置及其制造方法
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2010-08-17 |
Wisconsin Alumni Research Foundation |
PIN diodes for photodetection and high-speed, high-resolution image sensing
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2010-09-17 |
2015-05-05 |
The Governors Of The University Of Alberta |
Two- and three-terminal molecular electronic devices with ballistic electron transport
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2016-05-11 |
2018-10-23 |
Atomera Incorporated |
Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods
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2016-08-08 |
2019-01-01 |
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Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers
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2019-01-29 |
Atomera Incorporated |
Method for making a semiconductor device including threshold voltage measurement circuitry
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2017-05-16 |
2018-11-22 |
Atomera Incorporated |
Semiconductor device and method including a superlattice as a gettering layer
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2017-06-13 |
2023-11-03 |
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2017-07-31 |
2018-10-23 |
Atomera Incorporated |
Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
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2017-08-18 |
2023-08-02 |
Atomera Incorporated |
Herstellungsverfahren eines halbleiterbauelements mit entfernung von nicht-monokristallinem stringer neben einem übergitter-sti-übergang
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2017-12-15 |
2019-05-28 |
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CMOS image sensor with buried superlattice layer to reduce crosstalk
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2017-12-15 |
2019-07-23 |
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Method for making CMOS image sensor including superlattice to enhance infrared light absorption
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2017-12-15 |
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Method for making CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
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Method for making CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
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2017-12-15 |
2020-01-07 |
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CMOS image sensor including pixels with read circuitry having a superlattice
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2017-12-15 |
2020-03-31 |
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Method for making CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
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2017-12-15 |
2020-01-07 |
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Method for making CMOS image sensor including pixels with read circuitry having a superlattice
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2017-12-15 |
2019-07-16 |
Atomera Incorporated |
CMOS image sensor including photodiodes with overlying superlattices to reduce crosstalk
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2017-12-15 |
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CMOS image sensor including superlattice to enhance infrared light absorption
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2017-12-15 |
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CMOS image sensor including stacked semiconductor chips and readout circuitry including a superlattice
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2017-12-15 |
2019-08-27 |
Atomera Incorporated |
Method for making CMOS image sensor with buried superlattice layer to reduce crosstalk
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2017-12-15 |
2019-07-30 |
Atomera Incorporated |
CMOS image sensor including stacked semiconductor chips and image processing circuitry including a superlattice
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2018-03-08 |
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2018-03-09 |
2019-11-05 |
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Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
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2018-03-09 |
2020-07-28 |
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Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
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2018-04-12 |
2021-02-17 |
Atomera Incorporated |
Halbleiterbauelement und verfahren mit vertikal integrierten optischen und elektronischen vorrichtungen und mit einem übergitter
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2018-04-12 |
2021-02-17 |
Atomera Incorporated |
Vorrichtung und verfahren zur herstellung eines invertierten t-kanal-feldeffekttransistors (itfet) mit einem übergitter
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2018-08-30 |
2020-10-20 |
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Method for making superlattice structures with reduced defect densities
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2018-08-30 |
2020-02-18 |
Atomera Incorporated |
Semiconductor device including superlattice structures with reduced defect densities
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2020-11-17 |
Atomera Incorporated |
Method for making a FINFET having reduced contact resistance
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2020-11-24 |
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Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance
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2018-11-16 |
2020-12-01 |
Atomera Incorporated |
Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance
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2018-11-16 |
2020-11-17 |
Atomera Incorporated |
Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance
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2018-11-16 |
2020-11-17 |
Atomera Incorporated |
Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
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2018-11-16 |
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FINFET including source and drain regions with dopant diffusion blocking superlattice layers to reduce contact resistance
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2018-11-16 |
2020-10-27 |
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Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
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2018-11-16 |
2020-03-17 |
Atomera Incorporated |
Method for making a semiconductor device having reduced contact resistance
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2018-11-16 |
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Atomera Incorporated |
Semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance
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2021-08-17 |
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Method for making a semiconductor device including a superlattice and an asymmetric channel and related methods
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2019-07-17 |
2021-03-02 |
Atomera Incorporated |
Method for making a varactor with a hyper-abrupt junction region including spaced-apart superlattices
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2019-07-17 |
2021-11-23 |
Atomera Incorporated |
Semiconductor devices including hyper-abrupt junction region including spaced-apart superlattices and related methods
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2019-07-17 |
2020-11-17 |
Atomera Incorporated |
Varactor with hyper-abrupt junction region including a superlattice
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2019-07-17 |
2021-03-02 |
Atomera Incorporated |
Method for making semiconductor devices with hyper-abrupt junction region including spaced-apart superlattices
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2019-07-17 |
2020-11-03 |
Atomera Incorporated |
Varactor with hyper-abrupt junction region including spaced-apart superlattices
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2019-07-17 |
2020-12-29 |
Atomera Incorporated |
Method for making a semiconductor device having a hyper-abrupt junction region including a superlattice
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2019-07-17 |
2020-12-15 |
Atomera Incorporated |
Method for making a varactor with hyper-abrupt junction region including a superlattice
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2019-07-17 |
2020-11-03 |
Atomera Incorporated |
Semiconductor devices including hyper-abrupt junction region including a superlattice
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2020-01-14 |
2022-09-06 |
Atomera Incorporated |
Methods for making bipolar junction transistors including emitter-base and base-collector superlattices
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2020-02-26 |
2022-04-12 |
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Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers
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2020-02-26 |
2021-11-16 |
Atomera Incorporated |
Semiconductor device including a superlattice with different non-semiconductor material monolayers
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2020-03-06 |
2021-07-27 |
Atomera Incorporated |
Method for making a semiconductor device including a superlattice within a recessed etch
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2020-04-19 |
2021-09-28 |
Koucheng Wu |
Quantum wire resonant tunneling transistor
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2020-06-11 |
2023-01-31 |
Atomera Incorporated |
Method for making semiconductor device including a superlattice and providing reduced gate leakage
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2020-06-11 |
2022-10-11 |
Atomera Incorporated |
Semiconductor device including a superlattice and providing reduced gate leakage
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2020-07-02 |
2023-12-05 |
Atomera Incorporated |
Semiconductor device including superlattice with oxygen and carbon monolayers
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2021-03-03 |
2023-05-21 |
美商安托梅拉公司 |
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2021-04-21 |
2023-11-07 |
Atomera Incorporated |
Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
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2021-04-21 |
2024-03-05 |
Atomera Incorporated |
Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
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2021-05-26 |
2023-06-20 |
Atomera Incorporated |
Method for making semiconductor device including superlattice with O18 enriched monolayers
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2021-05-26 |
2023-08-15 |
Atomera Incorporated |
Semiconductor device including superlattice with O18 enriched monolayers
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2021-10-28 |
2023-04-18 |
Atomera Incorporated |
Method for making semiconductor device with selective etching of superlattice to define etch stop layer
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2021-10-28 |
2023-08-08 |
Atomera Incorporated |
Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms
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