DE69400675D1 - Verfahren zur Herstellung von Resiststrukturen - Google Patents
Verfahren zur Herstellung von ResiststrukturenInfo
- Publication number
- DE69400675D1 DE69400675D1 DE69400675T DE69400675T DE69400675D1 DE 69400675 D1 DE69400675 D1 DE 69400675D1 DE 69400675 T DE69400675 T DE 69400675T DE 69400675 T DE69400675 T DE 69400675T DE 69400675 D1 DE69400675 D1 DE 69400675D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- resist structures
- resist
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5159902A JPH06332196A (ja) | 1993-05-24 | 1993-05-24 | レジストパターンの形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69400675D1 true DE69400675D1 (de) | 1996-11-14 |
DE69400675T2 DE69400675T2 (de) | 1997-03-06 |
Family
ID=15703672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69400675T Expired - Fee Related DE69400675T2 (de) | 1993-05-24 | 1994-05-24 | Verfahren zur Herstellung von Resiststrukturen |
Country Status (4)
Country | Link |
---|---|
US (1) | US5683857A (de) |
EP (1) | EP0626620B1 (de) |
JP (1) | JPH06332196A (de) |
DE (1) | DE69400675T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999052018A1 (en) * | 1998-04-07 | 1999-10-14 | Euv Limited Liability Corporation | Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths |
JP3711198B2 (ja) * | 1998-04-23 | 2005-10-26 | 東京応化工業株式会社 | レジストパターンの形成方法 |
US6210856B1 (en) | 1999-01-27 | 2001-04-03 | International Business Machines Corporation | Resist composition and process of forming a patterned resist layer on a substrate |
US6461971B1 (en) | 2000-01-21 | 2002-10-08 | Chartered Semiconductor Manufacturing Ltd. | Method of residual resist removal after etching of aluminum alloy filmsin chlorine containing plasma |
US6740597B1 (en) * | 2000-08-31 | 2004-05-25 | Micron Technology, Inc. | Methods of removing at least some of a material from a semiconductor substrate |
JP4524744B2 (ja) * | 2004-04-14 | 2010-08-18 | 日本電気株式会社 | 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5108875A (en) * | 1988-07-29 | 1992-04-28 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
JPH02115853A (ja) * | 1988-10-26 | 1990-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0442229A (ja) * | 1990-06-08 | 1992-02-12 | Fujitsu Ltd | レジスト材料およびパターンの形成方法 |
JPH0469662A (ja) * | 1990-07-10 | 1992-03-04 | Japan Synthetic Rubber Co Ltd | レジストの処理方法 |
US5286595A (en) * | 1990-08-08 | 1994-02-15 | E. I. Du Pont De Nemours And Company | Process for creating a tacky tonable image surface through exposure of a substrate coated with a polymer blend, including a photo-acid generator, to actinic radiation |
US5391441A (en) * | 1992-02-21 | 1995-02-21 | Hitachi, Ltd. | Exposure mask and method of manufacture thereof |
US5346803A (en) * | 1993-09-15 | 1994-09-13 | Shin-Etsu Chemical Co., Ltd. | Photoresist composition comprising a copolymer having a di-t-butyl fumarate |
-
1993
- 1993-05-24 JP JP5159902A patent/JPH06332196A/ja active Pending
-
1994
- 1994-05-24 DE DE69400675T patent/DE69400675T2/de not_active Expired - Fee Related
- 1994-05-24 EP EP94108008A patent/EP0626620B1/de not_active Expired - Lifetime
-
1996
- 1996-08-01 US US08/686,921 patent/US5683857A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69400675T2 (de) | 1997-03-06 |
US5683857A (en) | 1997-11-04 |
JPH06332196A (ja) | 1994-12-02 |
EP0626620B1 (de) | 1996-10-09 |
EP0626620A1 (de) | 1994-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |