DE69330835T2 - Method for producing a tandem photovoltaic device with improved efficiency and device produced thereby - Google Patents
Method for producing a tandem photovoltaic device with improved efficiency and device produced therebyInfo
- Publication number
- DE69330835T2 DE69330835T2 DE69330835T DE69330835T DE69330835T2 DE 69330835 T2 DE69330835 T2 DE 69330835T2 DE 69330835 T DE69330835 T DE 69330835T DE 69330835 T DE69330835 T DE 69330835T DE 69330835 T2 DE69330835 T2 DE 69330835T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- improved efficiency
- tandem photovoltaic
- tandem
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Press Drives And Press Lines (AREA)
- Materials For Medical Uses (AREA)
Abstract
The thicknesses of the intrinsic layers of the cells comprising a tandem photovoltaic device are selected so that the cell having the highest quality semiconductor material produces the lowest photocurrent. That cell will then be the dominant cell in the tandem device and its material properties will contribute disproportionately to the overall properties of the tandem device.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/990,085 US5298086A (en) | 1992-05-15 | 1992-12-14 | Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby |
US990085 | 1992-12-14 | ||
PCT/US1993/011697 WO1994014199A1 (en) | 1992-12-14 | 1993-12-01 | Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69330835D1 DE69330835D1 (en) | 2001-10-31 |
DE69330835T2 true DE69330835T2 (en) | 2002-06-13 |
DE69330835T3 DE69330835T3 (en) | 2007-02-22 |
Family
ID=25535748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69330835T Expired - Lifetime DE69330835T3 (en) | 1992-12-14 | 1993-12-01 | A process for producing a tandem photovoltaic device with improved efficiency and device produced thereby |
Country Status (9)
Country | Link |
---|---|
US (1) | US5298086A (en) |
EP (1) | EP0673550B2 (en) |
JP (1) | JP2783682B2 (en) |
AT (1) | ATE206247T1 (en) |
AU (1) | AU672466B2 (en) |
CA (1) | CA2151736C (en) |
DE (1) | DE69330835T3 (en) |
ES (1) | ES2164095T5 (en) |
WO (1) | WO1994014199A1 (en) |
Cited By (9)
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---|---|---|---|---|
US7772485B2 (en) | 2005-07-14 | 2010-08-10 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US7781673B2 (en) | 2005-07-14 | 2010-08-24 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US8008421B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
US8008424B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with thiazole-containing polymer |
US8158881B2 (en) | 2005-07-14 | 2012-04-17 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
US8455606B2 (en) | 2008-08-07 | 2013-06-04 | Merck Patent Gmbh | Photoactive polymers |
US8975512B2 (en) | 2005-12-21 | 2015-03-10 | Merck Patent Gmbh | Tandem photovoltaic cells |
DE102014018811A1 (en) * | 2014-12-19 | 2016-06-23 | Universität Siegen | Sensor, in particular photodiode |
DE112012001058B4 (en) * | 2011-03-01 | 2019-08-29 | International Business Machines Corporation | METHOD FOR PRODUCING A TANDEM PHOTOVOLTAIC UNIT |
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US5977476A (en) * | 1996-10-16 | 1999-11-02 | United Solar Systems Corporation | High efficiency photovoltaic device |
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JP3768672B2 (en) | 1998-02-26 | 2006-04-19 | キヤノン株式会社 | Multilayer photovoltaic device |
US6166318A (en) | 1998-03-03 | 2000-12-26 | Interface Studies, Inc. | Single absorber layer radiated energy conversion device |
US6468829B2 (en) * | 2000-05-16 | 2002-10-22 | United Solar Systems Corporation | Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates |
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US7635637B2 (en) * | 2005-07-25 | 2009-12-22 | Fairchild Semiconductor Corporation | Semiconductor structures formed on substrates and methods of manufacturing the same |
US9105776B2 (en) | 2006-05-15 | 2015-08-11 | Stion Corporation | Method and structure for thin film photovoltaic materials using semiconductor materials |
US8017860B2 (en) | 2006-05-15 | 2011-09-13 | Stion Corporation | Method and structure for thin film photovoltaic materials using bulk semiconductor materials |
US20080300918A1 (en) * | 2007-05-29 | 2008-12-04 | Commercenet Consortium, Inc. | System and method for facilitating hospital scheduling and support |
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US8287942B1 (en) | 2007-09-28 | 2012-10-16 | Stion Corporation | Method for manufacture of semiconductor bearing thin film material |
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US8058092B2 (en) | 2007-09-28 | 2011-11-15 | Stion Corporation | Method and material for processing iron disilicide for photovoltaic application |
US7998762B1 (en) | 2007-11-14 | 2011-08-16 | Stion Corporation | Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration |
US8440903B1 (en) | 2008-02-21 | 2013-05-14 | Stion Corporation | Method and structure for forming module using a powder coating and thermal treatment process |
US8772078B1 (en) | 2008-03-03 | 2014-07-08 | Stion Corporation | Method and system for laser separation for exclusion region of multi-junction photovoltaic materials |
US8075723B1 (en) | 2008-03-03 | 2011-12-13 | Stion Corporation | Laser separation method for manufacture of unit cells for thin film photovoltaic materials |
US20090229667A1 (en) * | 2008-03-14 | 2009-09-17 | Solarmer Energy, Inc. | Translucent solar cell |
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US8367798B2 (en) | 2008-09-29 | 2013-02-05 | The Regents Of The University Of California | Active materials for photoelectric devices and devices that use the materials |
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US8008110B1 (en) | 2008-09-29 | 2011-08-30 | Stion Corporation | Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method |
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US8026122B1 (en) | 2008-09-29 | 2011-09-27 | Stion Corporation | Metal species surface treatment of thin film photovoltaic cell and manufacturing method |
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US8435826B1 (en) | 2008-10-06 | 2013-05-07 | Stion Corporation | Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method |
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Family Cites Families (9)
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US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
US4517223A (en) * | 1982-09-24 | 1985-05-14 | Sovonics Solar Systems | Method of making amorphous semiconductor alloys and devices using microwave energy |
US4480585A (en) * | 1983-06-23 | 1984-11-06 | Energy Conversion Devices, Inc. | External isolation module |
US4878097A (en) * | 1984-05-15 | 1989-10-31 | Eastman Kodak Company | Semiconductor photoelectric conversion device and method for making same |
US5071490A (en) * | 1988-03-18 | 1991-12-10 | Sharp Kabushiki Kaisha | Tandem stacked amorphous solar cell device |
KR910007465B1 (en) * | 1988-10-27 | 1991-09-26 | 삼성전관 주식회사 | Making method of solar cell of amorphous silicon |
JP2890441B2 (en) * | 1989-02-23 | 1999-05-17 | 工業技術院長 | Semiconductor device |
JP2690380B2 (en) * | 1990-03-23 | 1997-12-10 | キヤノン株式会社 | Method for continuous formation of functionally deposited film |
US5204272A (en) * | 1991-12-13 | 1993-04-20 | United Solar Systems Corporation | Semiconductor device and microwave process for its manufacture |
-
1992
- 1992-12-14 US US07/990,085 patent/US5298086A/en not_active Expired - Lifetime
-
1993
- 1993-12-01 AU AU56846/94A patent/AU672466B2/en not_active Ceased
- 1993-12-01 JP JP6514244A patent/JP2783682B2/en not_active Expired - Fee Related
- 1993-12-01 ES ES94902490T patent/ES2164095T5/en not_active Expired - Lifetime
- 1993-12-01 AT AT94902490T patent/ATE206247T1/en not_active IP Right Cessation
- 1993-12-01 WO PCT/US1993/011697 patent/WO1994014199A1/en active IP Right Grant
- 1993-12-01 CA CA002151736A patent/CA2151736C/en not_active Expired - Fee Related
- 1993-12-01 DE DE69330835T patent/DE69330835T3/en not_active Expired - Lifetime
- 1993-12-01 EP EP94902490A patent/EP0673550B2/en not_active Expired - Lifetime
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8158881B2 (en) | 2005-07-14 | 2012-04-17 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
US7781673B2 (en) | 2005-07-14 | 2010-08-24 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US7772485B2 (en) | 2005-07-14 | 2010-08-10 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US8058550B2 (en) | 2005-07-14 | 2011-11-15 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US8975512B2 (en) | 2005-12-21 | 2015-03-10 | Merck Patent Gmbh | Tandem photovoltaic cells |
US8008424B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with thiazole-containing polymer |
US8563678B2 (en) | 2006-10-11 | 2013-10-22 | Merck Patent Gmbh | Photovoltaic cell with thiazole-containing polymer |
US8962783B2 (en) | 2006-10-11 | 2015-02-24 | Merck Patent Gmbh | Photovoltaic cell with silole-containing polymer |
US8008421B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
US9123895B2 (en) | 2006-10-11 | 2015-09-01 | Merck Patent Gmbh | Photovoltaic cell with thiazole-containing polymer |
US8455606B2 (en) | 2008-08-07 | 2013-06-04 | Merck Patent Gmbh | Photoactive polymers |
DE112012001058B4 (en) * | 2011-03-01 | 2019-08-29 | International Business Machines Corporation | METHOD FOR PRODUCING A TANDEM PHOTOVOLTAIC UNIT |
DE102014018811A1 (en) * | 2014-12-19 | 2016-06-23 | Universität Siegen | Sensor, in particular photodiode |
Also Published As
Publication number | Publication date |
---|---|
JP2783682B2 (en) | 1998-08-06 |
EP0673550B1 (en) | 2001-09-26 |
AU672466B2 (en) | 1996-10-03 |
ATE206247T1 (en) | 2001-10-15 |
ES2164095T3 (en) | 2002-02-16 |
CA2151736C (en) | 2003-03-18 |
US5298086A (en) | 1994-03-29 |
EP0673550A4 (en) | 1997-08-13 |
JPH08504542A (en) | 1996-05-14 |
AU5684694A (en) | 1994-07-04 |
DE69330835T3 (en) | 2007-02-22 |
ES2164095T5 (en) | 2007-03-01 |
WO1994014199A1 (en) | 1994-06-23 |
EP0673550A1 (en) | 1995-09-27 |
CA2151736A1 (en) | 1994-06-23 |
DE69330835D1 (en) | 2001-10-31 |
EP0673550B2 (en) | 2006-09-13 |
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