DE69232199T2 - Semiconductor arrangement with improved frequency response - Google Patents

Semiconductor arrangement with improved frequency response

Info

Publication number
DE69232199T2
DE69232199T2 DE69232199T DE69232199T DE69232199T2 DE 69232199 T2 DE69232199 T2 DE 69232199T2 DE 69232199 T DE69232199 T DE 69232199T DE 69232199 T DE69232199 T DE 69232199T DE 69232199 T2 DE69232199 T2 DE 69232199T2
Authority
DE
Germany
Prior art keywords
frequency response
semiconductor arrangement
improved frequency
improved
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232199T
Other languages
German (de)
Other versions
DE69232199D1 (en
Inventor
Bernard W Boland
Robert B Davies
Paul W Sanders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69232199D1 publication Critical patent/DE69232199D1/en
Publication of DE69232199T2 publication Critical patent/DE69232199T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE69232199T 1991-09-23 1992-09-14 Semiconductor arrangement with improved frequency response Expired - Fee Related DE69232199T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/763,773 US5254491A (en) 1991-09-23 1991-09-23 Method of making a semiconductor device having improved frequency response

Publications (2)

Publication Number Publication Date
DE69232199D1 DE69232199D1 (en) 2001-12-20
DE69232199T2 true DE69232199T2 (en) 2002-06-06

Family

ID=25068773

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232199T Expired - Fee Related DE69232199T2 (en) 1991-09-23 1992-09-14 Semiconductor arrangement with improved frequency response

Country Status (5)

Country Link
US (1) US5254491A (en)
EP (1) EP0534271B1 (en)
JP (1) JP3359664B2 (en)
DE (1) DE69232199T2 (en)
SG (1) SG44601A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457068A (en) * 1992-11-30 1995-10-10 Texas Instruments Incorporated Monolithic integration of microwave silicon devices and low loss transmission lines
US5859466A (en) 1995-06-07 1999-01-12 Nippon Steel Semiconductor Corporation Semiconductor device having a field-shield device isolation structure and method for making thereof
JPH0964164A (en) * 1995-08-24 1997-03-07 Nittetsu Semiconductor Kk Semiconductor device and its fabrication method
US5728507A (en) * 1996-02-20 1998-03-17 Motorola, Inc. Method for planarizing a semiconductor layer
US6114716A (en) * 1996-03-22 2000-09-05 The Whitaker Corporation Heterolithic microwave integrated circuits
EP0963602B1 (en) * 1996-03-22 2007-01-03 The Whitaker Corporation Microwave integrated circuits and process of making the same
US6014064A (en) * 1996-07-28 2000-01-11 The Whitaker Corporation Heterolithic voltage controlled oscillator
US6379785B1 (en) 1997-12-31 2002-04-30 Tyco Electronic Corp Glass-coated substrates for high frequency applications
US6191048B1 (en) 1997-12-31 2001-02-20 The Whitaker Corporation Process for manufacturing composite glass/Si substrates for microwave integrated circuit fabrication
US6307247B1 (en) 1999-07-12 2001-10-23 Robert Bruce Davies Monolithic low dielectric constant platform for passive components and method
DE10149195A1 (en) * 2001-10-05 2003-04-24 Infineon Technologies Ag Making integrated circuit on dielectric, comprises forming wafer with circuit, etching shallow trench, filling it with dielectric which is rendered planar and producing conductive structure on dielectric
DE10160509A1 (en) * 2001-11-30 2003-06-12 Ihp Gmbh Semiconductor device and method for its manufacture
JP2007505505A (en) 2004-01-10 2007-03-08 エイチブイブイアイ・セミコンダクターズ・インコーポレイテッド Power semiconductor device and method therefor
US8530963B2 (en) 2005-01-06 2013-09-10 Estivation Properties Llc Power semiconductor device and method therefor
US7656003B2 (en) * 2006-08-25 2010-02-02 Hvvi Semiconductors, Inc Electrical stress protection apparatus and method of manufacture
US7888746B2 (en) * 2006-12-15 2011-02-15 Hvvi Semiconductors, Inc. Semiconductor structure and method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58105551A (en) * 1981-11-20 1983-06-23 Fujitsu Ltd Semiconductor device
JPS5958838A (en) * 1982-09-29 1984-04-04 Hitachi Ltd Semiconductor device
JPS61154144A (en) * 1984-12-27 1986-07-12 Nec Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JP3359664B2 (en) 2002-12-24
JPH05206260A (en) 1993-08-13
EP0534271B1 (en) 2001-11-14
SG44601A1 (en) 1997-12-19
DE69232199D1 (en) 2001-12-20
EP0534271A3 (en) 1995-01-25
EP0534271A2 (en) 1993-03-31
US5254491A (en) 1993-10-19

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee