DE69223479T2 - Target zum reaktiven Sputtern sowie Verfahren zur Bildung eines Films unter Verwendung des Targets - Google Patents

Target zum reaktiven Sputtern sowie Verfahren zur Bildung eines Films unter Verwendung des Targets

Info

Publication number
DE69223479T2
DE69223479T2 DE69223479T DE69223479T DE69223479T2 DE 69223479 T2 DE69223479 T2 DE 69223479T2 DE 69223479 T DE69223479 T DE 69223479T DE 69223479 T DE69223479 T DE 69223479T DE 69223479 T2 DE69223479 T2 DE 69223479T2
Authority
DE
Germany
Prior art keywords
target
film
forming
reactive sputtering
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223479T
Other languages
English (en)
Other versions
DE69223479D1 (de
Inventor
Kunichika Kubota
Akitoshi Hiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4044653A external-priority patent/JPH05239633A/ja
Priority claimed from JP4172092A external-priority patent/JPH0610121A/ja
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Application granted granted Critical
Publication of DE69223479D1 publication Critical patent/DE69223479D1/de
Publication of DE69223479T2 publication Critical patent/DE69223479T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58007—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides
    • C04B35/58014—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides based on titanium nitrides, e.g. TiAlON
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69223479T 1991-09-27 1992-09-24 Target zum reaktiven Sputtern sowie Verfahren zur Bildung eines Films unter Verwendung des Targets Expired - Fee Related DE69223479T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24893291 1991-09-27
JP4044653A JPH05239633A (ja) 1992-03-02 1992-03-02 反応性スパッタリング用ターゲット、その製造方法およびこれを用いた成膜方法
JP4172092A JPH0610121A (ja) 1992-06-30 1992-06-30 反応性スパッタリング用ターゲットおよびこれを用いた成膜方法

Publications (2)

Publication Number Publication Date
DE69223479D1 DE69223479D1 (de) 1998-01-22
DE69223479T2 true DE69223479T2 (de) 1998-04-02

Family

ID=27291979

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223479T Expired - Fee Related DE69223479T2 (de) 1991-09-27 1992-09-24 Target zum reaktiven Sputtern sowie Verfahren zur Bildung eines Films unter Verwendung des Targets

Country Status (4)

Country Link
US (1) US5489367A (de)
EP (1) EP0534441B1 (de)
KR (1) KR970005420B1 (de)
DE (1) DE69223479T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3552238B2 (ja) * 1992-12-28 2004-08-11 日立金属株式会社 Ｌｓｉのオーミックコンタクト部形成方法
KR100320364B1 (ko) * 1993-03-23 2002-04-22 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 금속배선및그의형성방법
JP2984783B2 (ja) * 1995-03-13 1999-11-29 株式会社住友シチックス尼崎 スパッタリング用チタンターゲットおよびその製造方法
JPH11168071A (ja) * 1997-12-03 1999-06-22 Sony Corp Ｔｉ／ＴｉＮ膜の連続形成方法
US6291337B1 (en) * 1998-02-20 2001-09-18 Stmicroelectronics, Inc. Elimination of cracks generated after a rapid thermal process step of a semiconductor wafer
US6336999B1 (en) 2000-10-11 2002-01-08 Centre Luxembourgeois De Recherches Pour Le Verre Et Al Ceramique S.A. (C.R.V.C.) Apparatus for sputter-coating glass and corresponding method
TWI341337B (en) * 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
US8435388B2 (en) * 2005-11-01 2013-05-07 Cardinal Cg Company Reactive sputter deposition processes and equipment
DE102006046126A1 (de) * 2006-06-28 2008-01-03 Interpane Entwicklungs- Und Beratungsgesellschaft Mbh & Co Kg Verfahren zur Herstellung eines beschichteten Gegenstands durch Sputtern eines keramischen Targets
KR101394263B1 (ko) * 2008-02-19 2014-05-14 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
JP5238823B2 (ja) * 2008-12-22 2013-07-17 キヤノンアネルバ株式会社 半導体記憶素子の製造方法、及びスパッタ装置
US8802578B2 (en) * 2012-07-13 2014-08-12 Institute of Microelectronics, Chinese Academy of Sciences Method for forming tin by PVD
US10113228B2 (en) * 2014-06-20 2018-10-30 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling semiconductor deposition operation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197823A (ja) * 1984-10-18 1986-05-16 Fujitsu Ltd 半導体装置の製法
JPH0796701B2 (ja) * 1984-12-12 1995-10-18 日立金属株式会社 スパッタ用ターゲットとその製造方法
JPS6372866A (ja) * 1986-09-16 1988-04-02 Nippon Steel Corp 窒化チタンの装飾性コ−テイング方法
JPS63259075A (ja) * 1987-04-14 1988-10-26 Nippon Mining Co Ltd 窒化チタンタ−ゲツトとその製造方法
US4820393A (en) * 1987-05-11 1989-04-11 Tosoh Smd, Inc. Titanium nitride sputter targets
FR2640078B1 (fr) * 1988-10-20 1992-07-31 Alcatel Transmission Procede de depot de nitrure de silicium, dispositif de mise en oeuvre de ce procede, et application dudit procede a la fabrication de capacites hyperfrequences

Also Published As

Publication number Publication date
KR930006863A (ko) 1993-04-22
EP0534441A3 (en) 1993-07-28
EP0534441B1 (de) 1997-12-10
DE69223479D1 (de) 1998-01-22
EP0534441A2 (de) 1993-03-31
KR970005420B1 (ko) 1997-04-16
US5489367A (en) 1996-02-06

Similar Documents

Publication Publication Date Title
DE69216747D1 (de) Verfahren zur Bildung eines dünnen Films
DE69434949D1 (de) Verfahren und Vorrichtung zur Bildung eines abgeschiedenen Films
DE69633823D1 (de) Verfahren zur herstellung eines sputtertargets
DE69223479T2 (de) Target zum reaktiven Sputtern sowie Verfahren zur Bildung eines Films unter Verwendung des Targets
DE69416217D1 (de) Verfahren zum Herstellen eines dünnen Films
IL105612A0 (en) Apparatus and method for performing thin film layer thickness metrology by deforming a thin film into a reflective condenser
DE69430230T2 (de) Verfahren und Vorrichtung zur Herstellung eines Einkristallinen dünnen Films
DE69431115D1 (de) Verfahren zur verbesserten mikrowellenbeschichtung dünner filme
DE69329303D1 (de) Verfahren zur Herstellung eines diffusionsgebundenen Sputtertargetaufbaus
DE69715592D1 (de) Sputter-targets sowie verfahren zu deren herstellung
DE69120745D1 (de) Verfahren zur Züchtung eines dünnen kristallinen Films
DE69124582D1 (de) Verfahren zur Dickenkontrolle eines dünnen einkristallinen Filmes auf einem SOI Substrat
DE69324633D1 (de) Verfahren zur Herstellung eines einkristallinen Dünnfilmes
DE69133487D1 (de) Verfahren zur Herstellung eines dünnen metallischen Films
DE69418549D1 (de) Verfahren zur Herstellung eines Partikelnfilmes
DE69218276D1 (de) Verfahren zur Herstellung eines zusammengesetzten Films auf einem metallischen Substrat
DE69313808T2 (de) Verfahren zur Regelung eines reaktiven Sputterprozesses
DE59400447D1 (de) Verfahren zur Einstellung eines Bremswertes auf einen Soll-Bremswert
DE69412435D1 (de) Ferroelektrische Dünnschicht sowie Verfahren zur dessen Herstellung
DE69416963D1 (de) Vorrichtung zur Bogenbeschichtung im Vakuum
DE4492364T1 (de) Härtbare Masse und Verfahren zur Bildung eines Films unter Verwendung derselben
DE69118313D1 (de) Verfahren und Anlage zur Bildung eines dünnen Films
DE69600317D1 (de) Verfahren zur Herstellung eines Films auf einem keramischen Substrat
DE69214583D1 (de) Verfahren und Vorrichtung zur Verfolgung eines Zielpunktes mit beliebigen Unterbildern
DE3787038D1 (de) Verfahren zur ausbildung eines abgeschiedenen films.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee