DE69219057T2 - Tunnel effect transistor - Google Patents

Tunnel effect transistor

Info

Publication number
DE69219057T2
DE69219057T2 DE69219057T DE69219057T DE69219057T2 DE 69219057 T2 DE69219057 T2 DE 69219057T2 DE 69219057 T DE69219057 T DE 69219057T DE 69219057 T DE69219057 T DE 69219057T DE 69219057 T2 DE69219057 T2 DE 69219057T2
Authority
DE
Germany
Prior art keywords
effect transistor
tunnel effect
tunnel
transistor
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69219057T
Other languages
German (de)
Other versions
DE69219057D1 (en
Inventor
Toshio Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69219057D1 publication Critical patent/DE69219057D1/en
Application granted granted Critical
Publication of DE69219057T2 publication Critical patent/DE69219057T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69219057T 1991-10-15 1992-10-15 Tunnel effect transistor Expired - Fee Related DE69219057T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3265749A JP2773487B2 (en) 1991-10-15 1991-10-15 Tunnel transistor

Publications (2)

Publication Number Publication Date
DE69219057D1 DE69219057D1 (en) 1997-05-22
DE69219057T2 true DE69219057T2 (en) 1998-02-26

Family

ID=17421473

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219057T Expired - Fee Related DE69219057T2 (en) 1991-10-15 1992-10-15 Tunnel effect transistor

Country Status (4)

Country Link
US (1) US5589696A (en)
EP (1) EP0538036B1 (en)
JP (1) JP2773487B2 (en)
DE (1) DE69219057T2 (en)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69202554T2 (en) * 1991-12-25 1995-10-19 Nec Corp Tunnel transistor and its manufacturing process.
US6693317B2 (en) * 2001-07-13 2004-02-17 Taiwan Semiconductor Manufacturing Company Optical sensor by using tunneling diode
US20060113612A1 (en) * 2002-06-19 2006-06-01 Kailash Gopalakrishnan Insulated-gate semiconductor device and approach involving junction-induced intermediate region
JP4922753B2 (en) 2003-03-20 2012-04-25 パナソニック株式会社 Semiconductor device and manufacturing method thereof
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
KR101329388B1 (en) 2005-07-26 2013-11-14 앰버웨이브 시스템즈 코포레이션 Solutions for integrated circuit integration of alternative active area materials
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US8441000B2 (en) * 2006-02-01 2013-05-14 International Business Machines Corporation Heterojunction tunneling field effect transistors, and methods for fabricating the same
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US8120115B2 (en) 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
KR101093588B1 (en) 2007-09-07 2011-12-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Multi-junction solar cells
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
CN102160145B (en) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 Formation of devices by epitaxial layer overgrowth
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
JP5705207B2 (en) 2009-04-02 2015-04-22 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． Device formed from non-polar surface of crystalline material and method of manufacturing the same
JP5910965B2 (en) * 2012-03-07 2016-04-27 国立研究開発法人産業技術総合研究所 Tunnel field effect transistor manufacturing method and tunnel field effect transistor
EP2674978B1 (en) * 2012-06-15 2020-07-29 IMEC vzw Tunnel field effect transistor device and method for making the device
JP2014053435A (en) 2012-09-06 2014-03-20 Toshiba Corp Semiconductor device
EP2808897B1 (en) 2013-05-30 2021-06-30 IMEC vzw Tunnel field effect transistor and method for making thereof
US8975123B2 (en) 2013-07-09 2015-03-10 International Business Machines Corporation Tunnel field-effect transistors with a gate-swing broken-gap heterostructure
JP6331375B2 (en) * 2013-12-17 2018-05-30 富士通株式会社 Field effect semiconductor device
JP6175411B2 (en) * 2014-06-16 2017-08-02 東芝メモリ株式会社 Semiconductor device
CN107431089B (en) * 2015-04-22 2021-03-30 华为技术有限公司 Tunneling transistor and preparation method thereof
CN109065615B (en) * 2018-06-12 2021-05-07 西安电子科技大学 Novel planar InAs/Si heterogeneous tunneling field effect transistor and preparation method thereof
CN110459541B (en) * 2019-06-27 2022-05-13 西安电子科技大学 Planar complementary type tunneling field effect transistor inverter
CN111640791A (en) * 2020-04-26 2020-09-08 西安电子科技大学 Quantum well tunneling field effect transistor based on InAs/GaSb heterojunction and preparation method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390352A (en) * 1961-11-06 1968-06-25 Itt Tunnel-effect semiconductor, used as an oscillator or amplifier, forms part of surface of waveguide or chamber
JPH0673375B2 (en) * 1984-03-19 1994-09-14 富士通株式会社 Method for manufacturing semiconductor device
DE3588086T2 (en) * 1984-11-05 1996-09-19 Hitachi Ltd Superconductor arrangement
JPS63250855A (en) * 1987-04-08 1988-10-18 Hitachi Ltd Bipolar transistor
US4969019A (en) * 1987-08-27 1990-11-06 Texas Instruments Incorporated Three-terminal tunnel device
JPH02268429A (en) * 1989-04-11 1990-11-02 Tokyo Electron Ltd Plasma etching apparatus
US5105247A (en) * 1990-08-03 1992-04-14 Cavanaugh Marion E Quantum field effect device with source extension region formed under a gate and between the source and drain regions
EP0480814B1 (en) * 1990-10-08 1996-04-24 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
JPH05235057A (en) * 1992-02-19 1993-09-10 Sanyo Electric Co Ltd Semiconductor device

Also Published As

Publication number Publication date
DE69219057D1 (en) 1997-05-22
EP0538036B1 (en) 1997-04-16
JP2773487B2 (en) 1998-07-09
US5589696A (en) 1996-12-31
EP0538036A2 (en) 1993-04-21
EP0538036A3 (en) 1995-03-22
JPH05110086A (en) 1993-04-30

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee