DE69210642D1 - Vorrichtung zum Ziehen von Einkristallen - Google Patents

Vorrichtung zum Ziehen von Einkristallen

Info

Publication number
DE69210642D1
DE69210642D1 DE69210642T DE69210642T DE69210642D1 DE 69210642 D1 DE69210642 D1 DE 69210642D1 DE 69210642 T DE69210642 T DE 69210642T DE 69210642 T DE69210642 T DE 69210642T DE 69210642 D1 DE69210642 D1 DE 69210642D1
Authority
DE
Germany
Prior art keywords
single crystals
pulling single
pulling
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69210642T
Other languages
English (en)
Other versions
DE69210642T2 (de
Inventor
Michiaki Oda
Koji Mizuishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69210642D1 publication Critical patent/DE69210642D1/de
Publication of DE69210642T2 publication Critical patent/DE69210642T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69210642T 1991-02-15 1992-02-13 Vorrichtung zum Ziehen von Einkristallen Expired - Fee Related DE69210642T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3042168A JPH0772116B2 (ja) 1991-02-15 1991-02-15 単結晶引上装置

Publications (2)

Publication Number Publication Date
DE69210642D1 true DE69210642D1 (de) 1996-06-20
DE69210642T2 DE69210642T2 (de) 1997-01-02

Family

ID=12628443

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69210642T Expired - Fee Related DE69210642T2 (de) 1991-02-15 1992-02-13 Vorrichtung zum Ziehen von Einkristallen

Country Status (4)

Country Link
US (1) US5330729A (de)
EP (1) EP0499471B1 (de)
JP (1) JPH0772116B2 (de)
DE (1) DE69210642T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3041670B2 (ja) * 1995-07-04 2000-05-15 信越半導体株式会社 単結晶引上げ装置
JP3402041B2 (ja) * 1995-12-28 2003-04-28 信越半導体株式会社 シリコン単結晶の製造装置
JPH09227286A (ja) * 1996-02-24 1997-09-02 Komatsu Electron Metals Co Ltd 単結晶製造装置
JPH09263491A (ja) * 1996-03-27 1997-10-07 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
DE19781966T1 (de) * 1996-09-03 1999-07-15 Sumitomo Sitix Corp Vorrichtung zum Ziehen von Einkristallen
KR100304291B1 (ko) * 1997-06-06 2001-12-28 후지이 아키히로 실리콘결정과그제조장치,제조방법
US6458201B2 (en) * 1997-08-19 2002-10-01 Shin-Etsu Handotai Co., Ltd. Apparatus for producing single crystals and method for producing single crystals
US6287382B1 (en) * 1998-10-13 2001-09-11 Memc Electronic Materials, Inc. Electrode assembly for electrical resistance heater used in crystal growing apparatus
DE19959416C1 (de) * 1999-12-09 2001-03-15 Freiberger Compound Mat Gmbh Heizelement zum Beheizen von Schmelztiegeln und Anordnung von Heizelementen
US8261690B2 (en) * 2006-07-14 2012-09-11 Georgia Tech Research Corporation In-situ flux measurement devices, methods, and systems
KR101620935B1 (ko) * 2009-12-14 2016-05-13 주식회사 케이씨씨 실리콘 잉고트의 인출장치 및 방법
CN102936748B (zh) * 2011-08-15 2015-07-29 江苏协鑫硅材料科技发展有限公司 一种铸锭炉的加热器
JP5945971B2 (ja) 2013-10-29 2016-07-05 信越半導体株式会社 シリコン単結晶引上装置
JP2022102247A (ja) * 2020-12-25 2022-07-07 株式会社Sumco シリコン単結晶製造装置の加熱部、シリコン融液の対流パターン制御方法、シリコン単結晶の製造方法、シリコンウェーハの製造方法、シリコン単結晶製造装置及びシリコン融液の対流パターン制御システム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3860736A (en) * 1973-10-29 1975-01-14 Hewlett Packard Co Crystal furnace
US4050905A (en) * 1975-05-27 1977-09-27 The Harshaw Chemical Company Growth of doped crystals
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
JP2678383B2 (ja) * 1989-05-30 1997-11-17 信越半導体 株式会社 単結晶上装置
KR930005015B1 (ko) * 1990-04-04 1993-06-11 한국과학기술연구원 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 화합물 반도체 단결정 성장장치

Also Published As

Publication number Publication date
EP0499471B1 (de) 1996-05-15
EP0499471A1 (de) 1992-08-19
US5330729A (en) 1994-07-19
JPH0772116B2 (ja) 1995-08-02
JPH04260687A (ja) 1992-09-16
DE69210642T2 (de) 1997-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee