DE69133544D1 - Vorrichtung zur Projektion eines Maskenmusters auf ein Substrat - Google Patents

Vorrichtung zur Projektion eines Maskenmusters auf ein Substrat

Info

Publication number
DE69133544D1
DE69133544D1 DE69133544T DE69133544T DE69133544D1 DE 69133544 D1 DE69133544 D1 DE 69133544D1 DE 69133544 T DE69133544 T DE 69133544T DE 69133544 T DE69133544 T DE 69133544T DE 69133544 D1 DE69133544 D1 DE 69133544D1
Authority
DE
Germany
Prior art keywords
projecting
substrate
mask pattern
pattern onto
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69133544T
Other languages
English (en)
Other versions
DE69133544T2 (de
Inventor
Stefan Wittekoek
Den Brink Marinus Aart Van
Theodorus Aart Fahner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE69133544D1 publication Critical patent/DE69133544D1/de
Application granted granted Critical
Publication of DE69133544T2 publication Critical patent/DE69133544T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69133544T 1990-03-05 1991-03-01 Vorrichtung zur Projektion eines Maskenmusters auf ein Substrat Expired - Fee Related DE69133544T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL9000503A NL9000503A (nl) 1990-03-05 1990-03-05 Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat.
NL9000503 1990-03-05

Publications (2)

Publication Number Publication Date
DE69133544D1 true DE69133544D1 (de) 2006-10-19
DE69133544T2 DE69133544T2 (de) 2007-09-06

Family

ID=19856693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69133544T Expired - Fee Related DE69133544T2 (de) 1990-03-05 1991-03-01 Vorrichtung zur Projektion eines Maskenmusters auf ein Substrat

Country Status (6)

Country Link
US (1) US5144363A (de)
EP (2) EP0992855B1 (de)
JP (1) JPH0793256B2 (de)
KR (1) KR100230690B1 (de)
DE (1) DE69133544T2 (de)
NL (1) NL9000503A (de)

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KR0139039B1 (ko) * 1993-06-30 1998-06-01 미타라이 하지메 노광장치와 이것을 이용한 디바이스 제조방법
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EP0721608B1 (de) * 1994-08-02 2003-10-01 Koninklijke Philips Electronics N.V. Verfahren zur wiederholten abbildung eines maskenmusters auf einem substrat
DE69629087T2 (de) * 1995-05-30 2004-04-22 Asml Netherlands B.V. Positionierungsgerät mit einem referenzrahmen für ein messsystem
JPH09115799A (ja) 1995-10-16 1997-05-02 Nikon Corp 走査型露光装置
JP3570728B2 (ja) 1997-03-07 2004-09-29 アーエスエム リソグラフィ ベスローテン フェンノートシャップ 離軸整列ユニットを持つリトグラフ投射装置
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US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
WO1999031462A1 (fr) * 1997-12-18 1999-06-24 Nikon Corporation Platine et appareil d'exposition
US6136517A (en) * 1998-03-06 2000-10-24 Raytheon Company Method for photo composition of large area integrated circuits
WO1999050712A1 (fr) * 1998-03-26 1999-10-07 Nikon Corporation Procede et systeme d'exposition, photomasque et son procede de fabrication, micro-composant et son procede de fabrication
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EP1055155A1 (de) 1998-12-14 2000-11-29 Koninklijke Philips Electronics N.V. Euv-beleuchtungssystem
US6280906B1 (en) 1998-12-22 2001-08-28 U.S. Philips Corporation Method of imaging a mask pattern on a substrate by means of EUV radiation, and apparatus and mask for performing the method
US6924884B2 (en) 1999-03-08 2005-08-02 Asml Netherlands B.V. Off-axis leveling in lithographic projection apparatus
TW490596B (en) * 1999-03-08 2002-06-11 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus
US7116401B2 (en) * 1999-03-08 2006-10-03 Asml Netherlands B.V. Lithographic projection apparatus using catoptrics in an optical sensor system, optical arrangement, method of measuring, and device manufacturing method
US6850313B2 (en) 1999-10-01 2005-02-01 Nikon Corporation Exposure method, exposure apparatus and its making method, device manufacturing method, and device
DE60116967T2 (de) * 2000-08-25 2006-09-21 Asml Netherlands B.V. Lithographischer Apparat
IL138552A (en) 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Measurement of transverse displacement by optical method
TW556296B (en) * 2000-12-27 2003-10-01 Koninkl Philips Electronics Nv Method of measuring alignment of a substrate with respect to a reference alignment mark
EP1233304A1 (de) * 2001-02-14 2002-08-21 Asm Lithography B.V. Lithographischer Apparat
US7283208B2 (en) 2001-02-14 2007-10-16 Asml Netherlands B.V. Lithographic apparatus, method of manufacturing a device, and device manufactured thereby
EP1235114A1 (de) * 2001-02-14 2002-08-28 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US6956659B2 (en) 2001-05-22 2005-10-18 Nikon Precision Inc. Measurement of critical dimensions of etched features
KR100583693B1 (ko) 2001-05-23 2006-05-25 에이에스엠엘 네델란즈 비.브이. 실질적으로 투과성인 공정층내에 정렬마크가 제공된 기판,상기 마크를 노광하는 마스크, 디바이스 제조방법 및 그디바이스
US6654698B2 (en) 2001-06-12 2003-11-25 Applied Materials, Inc. Systems and methods for calibrating integrated inspection tools
TWI268403B (en) 2001-10-19 2006-12-11 Asml Netherlands Bv Lithographic apparatus, device manufacturing method
US7095496B2 (en) * 2001-12-12 2006-08-22 Tokyo Electron Limited Method and apparatus for position-dependent optical metrology calibration
US6974653B2 (en) 2002-04-19 2005-12-13 Nikon Precision Inc. Methods for critical dimension and focus mapping using critical dimension test marks
SG152898A1 (en) 2002-09-20 2009-06-29 Asml Netherlands Bv Alignment systems and methods for lithographic systems
EP1510870A1 (de) * 2003-08-29 2005-03-02 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7057709B2 (en) * 2003-12-04 2006-06-06 International Business Machines Corporation Printing a mask with maximum possible process window through adjustment of the source distribution
KR101026935B1 (ko) * 2003-12-10 2011-04-04 엘지디스플레이 주식회사 디스펜서 정렬장치 및 그 방법
JP4599893B2 (ja) * 2004-05-31 2010-12-15 株式会社ニコン 位置ずれ検出方法
US7355675B2 (en) * 2004-12-29 2008-04-08 Asml Netherlands B.V. Method for measuring information about a substrate, and a substrate for use in a lithographic apparatus
US20060147821A1 (en) 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7525638B2 (en) * 2005-03-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1931947A2 (de) * 2005-09-21 2008-06-18 Koninklijke Philips Electronics N.V. System zur bewegungsdetektion eines körpers
US7433018B2 (en) * 2005-12-27 2008-10-07 Asml Netherlands B.V. Pattern alignment method and lithographic apparatus
US7684011B2 (en) * 2007-03-02 2010-03-23 Asml Netherlands B.V. Calibration method for a lithographic apparatus
US7875987B2 (en) 2007-09-26 2011-01-25 International Business Machines Corporation Method and apparatus for measurement and control of photomask to substrate alignment
DE102008004762A1 (de) 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
US8411270B2 (en) * 2008-01-17 2013-04-02 International Business Machines Corporation Monitoring stage alignment and related stage and calibration target
NL2003363A (en) * 2008-09-10 2010-03-15 Asml Netherlands Bv Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method.
DE102009054860A1 (de) 2009-12-17 2011-06-22 Carl Zeiss SMT GmbH, 73447 Optisches System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
KR101328870B1 (ko) 2009-09-30 2013-11-13 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 광학 시스템
KR101281454B1 (ko) * 2010-10-13 2013-07-03 주식회사 고영테크놀러지 측정장치 및 이의 보정방법
US9030661B1 (en) 2013-03-15 2015-05-12 Kla-Tencor Corporation Alignment measurement system
US9977343B2 (en) * 2013-09-10 2018-05-22 Nikon Corporation Correction of errors caused by ambient non-uniformities in a fringe-projection autofocus system in absence of a reference mirror
CN105467781B (zh) * 2014-09-09 2017-12-29 上海微电子装备（集团）股份有限公司 一种具有调焦及倾斜校正设计的标记及对准方法
NL2017710A (en) * 2015-11-30 2017-06-07 Asml Netherlands Bv Lithographic Method and Apparatus
US10712671B2 (en) 2016-05-19 2020-07-14 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
US11067900B2 (en) 2016-05-19 2021-07-20 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
US10890849B2 (en) 2016-05-19 2021-01-12 Nikon Corporation EUV lithography system for dense line patterning
US10295911B2 (en) 2016-05-19 2019-05-21 Nikon Corporation Extreme ultraviolet lithography system that utilizes pattern stitching
US11982521B2 (en) * 2017-02-23 2024-05-14 Nikon Corporation Measurement of a change in a geometrical characteristic and/or position of a workpiece
US11934105B2 (en) 2017-04-19 2024-03-19 Nikon Corporation Optical objective for operation in EUV spectral region
US11054745B2 (en) 2017-04-26 2021-07-06 Nikon Corporation Illumination system with flat 1D-patterned mask for use in EUV-exposure tool
US11300884B2 (en) 2017-05-11 2022-04-12 Nikon Corporation Illumination system with curved 1d-patterned mask for use in EUV-exposure tool
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JP2694868B2 (ja) * 1987-08-31 1997-12-24 株式会社ニコン 位置検出方法及び装置

Also Published As

Publication number Publication date
EP0445871A1 (de) 1991-09-11
EP0992855B1 (de) 2006-09-06
NL9000503A (nl) 1991-10-01
US5144363A (en) 1992-09-01
JPH0793256B2 (ja) 1995-10-09
JPH06163348A (ja) 1994-06-10
EP0992855A1 (de) 2000-04-12
KR100230690B1 (ko) 2000-06-01
KR920005810A (ko) 1992-04-03
DE69133544T2 (de) 2007-09-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee