DE69127636D1 - Target für kathodenzerstäubung - Google Patents

Target für kathodenzerstäubung

Info

Publication number
DE69127636D1
DE69127636D1 DE69127636T DE69127636T DE69127636D1 DE 69127636 D1 DE69127636 D1 DE 69127636D1 DE 69127636 T DE69127636 T DE 69127636T DE 69127636 T DE69127636 T DE 69127636T DE 69127636 D1 DE69127636 D1 DE 69127636D1
Authority
DE
Germany
Prior art keywords
cathod
spraying
target
cathod spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127636T
Other languages
English (en)
Other versions
DE69127636T2 (de
Inventor
Daniel R Marx
Steven D Hurwitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materials Research Corp
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of DE69127636D1 publication Critical patent/DE69127636D1/de
Application granted granted Critical
Publication of DE69127636T2 publication Critical patent/DE69127636T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69127636T 1991-01-28 1991-11-18 Target für kathodenzerstäubung Expired - Fee Related DE69127636T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64728891A 1991-01-28 1991-01-28
PCT/US1991/008584 WO1992013115A1 (en) 1991-01-28 1991-11-18 Target for cathode sputtering

Publications (2)

Publication Number Publication Date
DE69127636D1 true DE69127636D1 (de) 1997-10-16
DE69127636T2 DE69127636T2 (de) 1998-01-22

Family

ID=24596359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127636T Expired - Fee Related DE69127636T2 (de) 1991-01-28 1991-11-18 Target für kathodenzerstäubung

Country Status (8)

Country Link
US (1) US5336386A (de)
EP (1) EP0569467B1 (de)
JP (1) JPH06505304A (de)
KR (1) KR100231397B1 (de)
AU (1) AU1151592A (de)
CA (1) CA2098725A1 (de)
DE (1) DE69127636T2 (de)
WO (1) WO1992013115A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5490914A (en) * 1995-02-14 1996-02-13 Sony Corporation High utilization sputtering target for cathode assembly
US5474667A (en) * 1994-02-22 1995-12-12 Materials Research Corporation Reduced stress sputtering target and method of manufacturing therefor
US5830336A (en) * 1995-12-05 1998-11-03 Minnesota Mining And Manufacturing Company Sputtering of lithium
US6068742A (en) * 1996-07-22 2000-05-30 Balzers Aktiengesellschaft Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source
US5846389A (en) * 1997-05-14 1998-12-08 Sony Corporation Sputtering target protection device
US6086735A (en) * 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
US6113761A (en) 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
KR20020070443A (ko) 1999-11-24 2002-09-09 허니웰 인터내셔널 인코포레이티드 전도성 상호연결장치
US6503380B1 (en) * 2000-10-13 2003-01-07 Honeywell International Inc. Physical vapor target constructions
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
US6599405B2 (en) * 2001-05-30 2003-07-29 Praxair S.T. Technology, Inc. Recessed sputter target
US6921470B2 (en) * 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
EP1656467A2 (de) * 2003-08-21 2006-05-17 Honeywell International Inc. Kupferhaltige pvd-targets und herstellungsverfahren dafür
EP1674396A4 (de) * 2003-10-15 2007-08-22 Nippon Mining Co Verpackungsvorrichtung und verpackungsverfahren für hohlkathoden-sputtertarget
JP4629051B2 (ja) * 2004-11-17 2011-02-09 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット−バッキングプレート組立体及び成膜装置
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US9782949B2 (en) 2008-05-30 2017-10-10 Corning Incorporated Glass laminated articles and layered articles
KR20110117565A (ko) * 2010-04-21 2011-10-27 박영춘 단차구조를 포함하는 스퍼터 타켓 및 이를 이용하는 스퍼터링 장치
CN105210169B (zh) * 2013-04-08 2017-04-19 欧瑞康表面处理解决方案股份公司特鲁巴赫 功率兼容性更高的溅射靶
WO2015178968A1 (en) * 2014-05-20 2015-11-26 Seagate Technology Llc Contoured target for sputtering
CN112475676B (zh) * 2020-11-11 2022-11-15 宁波江丰电子材料股份有限公司 一种钽靶材焊接面的处理方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3669871A (en) * 1969-09-10 1972-06-13 Ibm Sputtering apparatus having a concave source cathode
US3791955A (en) * 1972-12-11 1974-02-12 Gte Laboratories Inc Preparation of chalcogenide glass sputtering targets
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
DE2651382A1 (de) * 1976-11-11 1978-05-18 Philips Patentverwaltung Verfahren zur kathodenzerstaeubung
DE3030329C2 (de) * 1980-08-11 1983-06-01 W.C. Heraeus Gmbh, 6450 Hanau Sputterkörper
DE3305068A1 (de) * 1983-02-14 1984-08-16 Arnold 7920 Heidenheim Haug Automatischer leucht- und klangkoerper
JPS59232271A (ja) * 1983-06-15 1984-12-27 Nec Corp マグネトロンスパツタリング用タ−ゲツト
JPH0614520B2 (ja) * 1983-12-26 1994-02-23 株式会社日立製作所 低圧雰囲気内の処理装置
JPS60152671A (ja) * 1984-01-20 1985-08-10 Anelva Corp スパツタリング電極
JPS60200962A (ja) * 1984-03-23 1985-10-11 Hitachi Ltd プレ−ナマグネトロンスパツタリング方法
CH659484A5 (de) * 1984-04-19 1987-01-30 Balzers Hochvakuum Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung.
CH665057A5 (de) * 1984-07-20 1988-04-15 Balzers Hochvakuum Targetplatte fuer kathodenzerstaeubung.
JPS6199674A (ja) * 1984-10-22 1986-05-17 Hitachi Ltd スパツタ電極
JPS61183467A (ja) * 1985-02-08 1986-08-16 Hitachi Ltd スパッタリング方法及びその装置
JPS627852A (ja) * 1985-07-04 1987-01-14 Toshiba Corp 薄膜形成方法
JPS62211372A (ja) * 1986-03-11 1987-09-17 Matsushita Electric Ind Co Ltd スパツタリング装置
JPS62211373A (ja) * 1986-03-11 1987-09-17 Matsushita Electric Ind Co Ltd スパツタリング装置
DE3787390T2 (de) * 1986-04-04 1994-06-16 Materials Research Corp Kathoden- und Target-Anordnung für eine Beschichtungsvorrichtung zum Zerstäuben.
US4855033A (en) * 1986-04-04 1989-08-08 Materials Research Corporation Cathode and target design for a sputter coating apparatus
JPS6357761A (ja) * 1986-08-28 1988-03-12 Matsushita Electric Ind Co Ltd スパツタリングタ−ゲツト
JPS6383263A (ja) * 1986-09-27 1988-04-13 Tokyo Electron Ltd スパツタリング装置
JPS63128173A (ja) * 1986-11-17 1988-05-31 Fuji Electric Co Ltd マグネトロン型タ−ゲツトカソ−ド装置
JPS63153266A (ja) * 1986-12-15 1988-06-25 Tokuda Seisakusho Ltd スパツタ装置
US4885075A (en) * 1987-01-27 1989-12-05 Machine Technology, Inc. Cooling device for a sputter target and source
JPS63235471A (ja) * 1987-03-24 1988-09-30 Nec Corp スパツタ装置用タ−ゲツト
JPS63238269A (ja) * 1987-03-26 1988-10-04 Mitsubishi Metal Corp マグネトロンスパツタリング用タ−ゲツト
JPS6475675A (en) * 1987-09-18 1989-03-22 Nec Corp Target for dc magnetron sputtering device
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
JPH02209478A (ja) * 1989-02-08 1990-08-20 Tokyo Electron Ltd スパッタ用ターゲット

Also Published As

Publication number Publication date
AU1151592A (en) 1992-08-27
WO1992013115A1 (en) 1992-08-06
JPH06505304A (ja) 1994-06-16
EP0569467B1 (de) 1997-09-10
KR100231397B1 (ko) 1999-11-15
EP0569467A1 (de) 1993-11-18
US5336386A (en) 1994-08-09
DE69127636T2 (de) 1998-01-22
CA2098725A1 (en) 1992-07-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee