DE69119995D1 - Photodiode - Google Patents

Photodiode

Info

Publication number
DE69119995D1
DE69119995D1 DE69119995T DE69119995T DE69119995D1 DE 69119995 D1 DE69119995 D1 DE 69119995D1 DE 69119995 T DE69119995 T DE 69119995T DE 69119995 T DE69119995 T DE 69119995T DE 69119995 D1 DE69119995 D1 DE 69119995D1
Authority
DE
Germany
Prior art keywords
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119995T
Other languages
English (en)
Other versions
DE69119995T2 (de
Inventor
Morio Wada
Masahito Seko
Youichi Sekiguchi
Hideto Iwaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optical Measurement Technology Development Co Ltd
Original Assignee
Optical Measurement Technology Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optical Measurement Technology Development Co Ltd filed Critical Optical Measurement Technology Development Co Ltd
Application granted granted Critical
Publication of DE69119995D1 publication Critical patent/DE69119995D1/de
Publication of DE69119995T2 publication Critical patent/DE69119995T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE69119995T 1990-08-07 1991-08-02 Photodiode Expired - Fee Related DE69119995T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2209584A JPH07123170B2 (ja) 1990-08-07 1990-08-07 受光素子

Publications (2)

Publication Number Publication Date
DE69119995D1 true DE69119995D1 (de) 1996-07-11
DE69119995T2 DE69119995T2 (de) 1997-01-30

Family

ID=16575255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119995T Expired - Fee Related DE69119995T2 (de) 1990-08-07 1991-08-02 Photodiode

Country Status (4)

Country Link
US (1) US5189309A (de)
EP (1) EP0470783B1 (de)
JP (1) JPH07123170B2 (de)
DE (1) DE69119995T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289494A (en) * 1990-10-19 1994-02-22 Optical Measurement Technology Development Co., Ltd. Distributed feedback semiconductor laser
GB9118338D0 (en) * 1991-08-27 1991-10-16 Secretary Trade Ind Brit A radiation detector for detecting infrared radiation
JP2694487B2 (ja) * 1992-03-30 1997-12-24 光計測技術開発株式会社 受光素子
JP3285981B2 (ja) * 1993-01-14 2002-05-27 浜松ホトニクス株式会社 半導体受光素子
DE69418870T2 (de) * 1994-07-13 1999-11-04 Hamamatsu Photonics K.K., Hamamatsu Halbleiter-Fotodetektor
US6730979B2 (en) 2002-09-12 2004-05-04 The Boeing Company Recessed p-type region cap layer avalanche photodiode
JP2004319765A (ja) 2003-04-16 2004-11-11 Sumitomo Electric Ind Ltd 化合物半導体ウエハおよびその製造方法
JP5197930B2 (ja) * 2006-06-30 2013-05-15 住友電工デバイス・イノベーション株式会社 半導体受光素子の製造方法
JP2008060161A (ja) * 2006-08-29 2008-03-13 Hamamatsu Photonics Kk 光検出器及び光検出器の製造方法
JP5197978B2 (ja) * 2007-03-29 2013-05-15 住友電工デバイス・イノベーション株式会社 光半導体モジュール
US8610170B2 (en) * 2010-01-25 2013-12-17 Irspec Corporation Compound semiconductor light-receiving element array
CN106486366B (zh) * 2015-08-26 2019-09-27 中芯国际集成电路制造(北京)有限公司 减薄磷化铟层的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861679A (ja) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 量子井戸層付アバランシ・ホトダイオ−ド
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
JPH07118548B2 (ja) * 1986-04-28 1995-12-18 住友電気工業株式会社 ▲ｉｉｉ▼−ｖ族多元化合物半導体ｐｉｎフオトダイオ−ド
JPS62291184A (ja) * 1986-06-11 1987-12-17 Fujitsu Ltd 半導体受光装置
JPS63227053A (ja) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd 半導体受光素子
JPH01194476A (ja) * 1988-01-29 1989-08-04 Nec Corp 半導体受光素子
JPH01259579A (ja) * 1988-04-11 1989-10-17 Fujitsu Ltd 半導体光素子
JPH02100379A (ja) * 1988-10-07 1990-04-12 Hikari Keisoku Gijutsu Kaihatsu Kk 受光素子
JPH0821727B2 (ja) * 1988-11-18 1996-03-04 日本電気株式会社 アバランシェフォトダイオード

Also Published As

Publication number Publication date
JPH0492479A (ja) 1992-03-25
DE69119995T2 (de) 1997-01-30
US5189309A (en) 1993-02-23
EP0470783A1 (de) 1992-02-12
JPH07123170B2 (ja) 1995-12-25
EP0470783B1 (de) 1996-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee