DE69119995D1 - Photodiode - Google Patents
PhotodiodeInfo
- Publication number
- DE69119995D1 DE69119995D1 DE69119995T DE69119995T DE69119995D1 DE 69119995 D1 DE69119995 D1 DE 69119995D1 DE 69119995 T DE69119995 T DE 69119995T DE 69119995 T DE69119995 T DE 69119995T DE 69119995 D1 DE69119995 D1 DE 69119995D1
- Authority
- DE
- Germany
- Prior art keywords
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2209584A JPH07123170B2 (ja) | 1990-08-07 | 1990-08-07 | 受光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69119995D1 true DE69119995D1 (de) | 1996-07-11 |
DE69119995T2 DE69119995T2 (de) | 1997-01-30 |
Family
ID=16575255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69119995T Expired - Fee Related DE69119995T2 (de) | 1990-08-07 | 1991-08-02 | Photodiode |
Country Status (4)
Country | Link |
---|---|
US (1) | US5189309A (de) |
EP (1) | EP0470783B1 (de) |
JP (1) | JPH07123170B2 (de) |
DE (1) | DE69119995T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5289494A (en) * | 1990-10-19 | 1994-02-22 | Optical Measurement Technology Development Co., Ltd. | Distributed feedback semiconductor laser |
GB9118338D0 (en) * | 1991-08-27 | 1991-10-16 | Secretary Trade Ind Brit | A radiation detector for detecting infrared radiation |
JP2694487B2 (ja) * | 1992-03-30 | 1997-12-24 | 光計測技術開発株式会社 | 受光素子 |
JP3285981B2 (ja) * | 1993-01-14 | 2002-05-27 | 浜松ホトニクス株式会社 | 半導体受光素子 |
DE69418870T2 (de) * | 1994-07-13 | 1999-11-04 | Hamamatsu Photonics K.K., Hamamatsu | Halbleiter-Fotodetektor |
US6730979B2 (en) | 2002-09-12 | 2004-05-04 | The Boeing Company | Recessed p-type region cap layer avalanche photodiode |
JP2004319765A (ja) | 2003-04-16 | 2004-11-11 | Sumitomo Electric Ind Ltd | 化合物半導体ウエハおよびその製造方法 |
JP5197930B2 (ja) * | 2006-06-30 | 2013-05-15 | 住友電工デバイス・イノベーション株式会社 | 半導体受光素子の製造方法 |
JP2008060161A (ja) * | 2006-08-29 | 2008-03-13 | Hamamatsu Photonics Kk | 光検出器及び光検出器の製造方法 |
JP5197978B2 (ja) * | 2007-03-29 | 2013-05-15 | 住友電工デバイス・イノベーション株式会社 | 光半導体モジュール |
US8610170B2 (en) * | 2010-01-25 | 2013-12-17 | Irspec Corporation | Compound semiconductor light-receiving element array |
CN106486366B (zh) * | 2015-08-26 | 2019-09-27 | 中芯国际集成电路制造(北京)有限公司 | 减薄磷化铟层的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5861679A (ja) * | 1981-10-07 | 1983-04-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 量子井戸層付アバランシ・ホトダイオ−ド |
JPS6016474A (ja) * | 1983-07-08 | 1985-01-28 | Nec Corp | ヘテロ多重接合型光検出器 |
JPS61172381A (ja) * | 1984-12-22 | 1986-08-04 | Fujitsu Ltd | InP系化合物半導体装置 |
JPH07118548B2 (ja) * | 1986-04-28 | 1995-12-18 | 住友電気工業株式会社 | ▲iii▼−v族多元化合物半導体pinフオトダイオ−ド |
JPS62291184A (ja) * | 1986-06-11 | 1987-12-17 | Fujitsu Ltd | 半導体受光装置 |
JPS63227053A (ja) * | 1987-03-17 | 1988-09-21 | Matsushita Electric Ind Co Ltd | 半導体受光素子 |
JPH01194476A (ja) * | 1988-01-29 | 1989-08-04 | Nec Corp | 半導体受光素子 |
JPH01259579A (ja) * | 1988-04-11 | 1989-10-17 | Fujitsu Ltd | 半導体光素子 |
JPH02100379A (ja) * | 1988-10-07 | 1990-04-12 | Hikari Keisoku Gijutsu Kaihatsu Kk | 受光素子 |
JPH0821727B2 (ja) * | 1988-11-18 | 1996-03-04 | 日本電気株式会社 | アバランシェフォトダイオード |
-
1990
- 1990-08-07 JP JP2209584A patent/JPH07123170B2/ja not_active Expired - Fee Related
-
1991
- 1991-07-08 US US07/726,802 patent/US5189309A/en not_active Expired - Lifetime
- 1991-08-02 DE DE69119995T patent/DE69119995T2/de not_active Expired - Fee Related
- 1991-08-02 EP EP91307142A patent/EP0470783B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0492479A (ja) | 1992-03-25 |
DE69119995T2 (de) | 1997-01-30 |
US5189309A (en) | 1993-02-23 |
EP0470783A1 (de) | 1992-02-12 |
JPH07123170B2 (ja) | 1995-12-25 |
EP0470783B1 (de) | 1996-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |