DE69115799D1 - Herstellung von Halbleiterpackungen - Google Patents

Herstellung von Halbleiterpackungen

Info

Publication number
DE69115799D1
DE69115799D1 DE69115799T DE69115799T DE69115799D1 DE 69115799 D1 DE69115799 D1 DE 69115799D1 DE 69115799 T DE69115799 T DE 69115799T DE 69115799 T DE69115799 T DE 69115799T DE 69115799 D1 DE69115799 D1 DE 69115799D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor packages
packages
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69115799T
Other languages
English (en)
Other versions
DE69115799T2 (de
Inventor
Paul John Melnick
Anthony Joseph Mennella
Herman Paul Meyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69115799D1 publication Critical patent/DE69115799D1/de
Application granted granted Critical
Publication of DE69115799T2 publication Critical patent/DE69115799T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69115799T 1990-08-28 1991-06-26 Herstellung von Halbleiterpackungen Expired - Fee Related DE69115799T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57441590A 1990-08-28 1990-08-28

Publications (2)

Publication Number Publication Date
DE69115799D1 true DE69115799D1 (de) 1996-02-08
DE69115799T2 DE69115799T2 (de) 1996-07-11

Family

ID=24296027

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69115799T Expired - Fee Related DE69115799T2 (de) 1990-08-28 1991-06-26 Herstellung von Halbleiterpackungen

Country Status (5)

Country Link
US (1) US5446314A (de)
EP (1) EP0473260B1 (de)
JP (1) JPH0750751B2 (de)
CA (1) CA2045945C (de)
DE (1) DE69115799T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0171921B1 (ko) * 1993-09-13 1999-03-30 모리시타 요이찌 전자부품과 그 제조방법
KR100214560B1 (ko) * 1997-03-05 1999-08-02 구본준 반도체 멀티칩 모듈
JPH11330283A (ja) * 1998-05-15 1999-11-30 Toshiba Corp 半導体モジュール及び大型半導体モジュール
JP4198904B2 (ja) * 2001-06-11 2008-12-17 富士通株式会社 記録再生装置、信号復号回路、エラー訂正方法、及び反復型復号器
US7042398B2 (en) * 2004-06-23 2006-05-09 Industrial Technology Research Institute Apparatus of antenna with heat slug and its fabricating process
DE102005047106B4 (de) * 2005-09-30 2009-07-23 Infineon Technologies Ag Leistungshalbleitermodul und Verfahren zur Herstellung
US8969733B1 (en) 2013-09-30 2015-03-03 Anaren, Inc. High power RF circuit
US9799720B2 (en) 2014-09-12 2017-10-24 International Business Machines Corporation Inductor heat dissipation in an integrated circuit
DE112018005027T5 (de) 2017-09-11 2020-07-02 The Yokohama Rubber Co., Ltd. Luftreifen und Verfahren zu dessen Herstellung
EP3867948A1 (de) * 2018-10-15 2021-08-25 Semtech Corporation Halbleitergehäuse zur bereitstellung von mechanischer isolierung von zusammengesetzten dioden

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2786167A (en) * 1957-03-19 esseling
US2791731A (en) * 1957-05-07 Metal rectifier assemblies
GB883862A (en) * 1958-05-29 1961-12-06 Ass Elect Ind Improvements relating to semi-conductor rectifiers
US3231794A (en) * 1961-06-05 1966-01-25 Int Rectifier Corp Thermal coupling of parallel connected semiconductor elements
US3266125A (en) * 1962-11-13 1966-08-16 Douglas Aircraft Co Inc Method for making electrical circuit modules
US3476985A (en) * 1965-12-15 1969-11-04 Licentia Gmbh Semiconductor rectifier unit
US3388302A (en) * 1966-12-30 1968-06-11 Coors Porcelain Co Ceramic housing for semiconductor components
DE2533692C3 (de) * 1975-07-28 1979-01-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Gleichrichterbrücke
US4021839A (en) * 1975-10-16 1977-05-03 Rca Corporation Diode package
DE2728313A1 (de) * 1977-06-23 1979-01-04 Siemens Ag Halbleiterbauelement
DE3235650A1 (de) * 1982-09-27 1984-03-29 Philips Patentverwaltung Gmbh, 2000 Hamburg Informationskarte und verfahren zu ihrer herstellung
IT1212708B (it) * 1983-02-28 1989-11-30 Ates Componenti Elettron Dispositivo di potenza a semiconduttore costituito da una molteplicita' di elementi attivi uguali collegati in parallelo.
US4554574A (en) * 1983-08-04 1985-11-19 Associated Equipment Corporation Rectifier assembly for parallel connection of diodes
JPS6060172U (ja) * 1983-09-13 1985-04-26 本田技研工業株式会社 整流器付トランス装置
US4583005A (en) * 1984-07-23 1986-04-15 Sundstrand Corporation Solid state switch assembly
US4613892A (en) * 1985-02-19 1986-09-23 Sundstrand Corporation Laminated semiconductor assembly

Also Published As

Publication number Publication date
EP0473260A1 (de) 1992-03-04
CA2045945A1 (en) 1992-03-01
JPH0613476A (ja) 1994-01-21
DE69115799T2 (de) 1996-07-11
US5446314A (en) 1995-08-29
EP0473260B1 (de) 1995-12-27
CA2045945C (en) 1996-07-23
JPH0750751B2 (ja) 1995-05-31

Similar Documents

Publication Publication Date Title
DE69220644D1 (de) Herstellung von Dielektrika in Halbleitervorrichtungen
DE69619330D1 (de) Herstellung von Halbleiterwafern
DE69624413T2 (de) Verbesserungen bei der Herstellung von Halbleitervorrichtungen
DE69214499D1 (de) Herstellung von Olefinen
DE69121788D1 (de) Herstellung von Aluminoxanen
DE69117356D1 (de) Herstellung von Aluminoxanen
DE69132627D1 (de) Halbleiter-bauteil
KR930012117U (ko) 반도체 패키지
DE69425527D1 (de) Oxidation von Silizium-Nitrid in der Herstellung von Halbleitenden Anordnungen
DE69130556D1 (de) Herstellung von hochreinen Siliziumstäben
DE69025805D1 (de) Herstellen von Halbleitervorrichtungen
DE3777532D1 (de) Herstellung von halbleiterbauelementen.
DE69211189D1 (de) Herstellungsverfahren von Siloxanzusammensetzungen
DK348089D0 (da) Halvlederkomposition
DE69322140T2 (de) Halbleiterpackung
DE69115799D1 (de) Herstellung von Halbleiterpackungen
DE69514284D1 (de) Herstellung von Catechol-Estrogen-Derivaten
DE69213862D1 (de) Herstellung von Aluminoxanen
KR900014991U (ko) 반도체 패키지(package)
DE69218638D1 (de) Herstellung von Hydrogensiloxanen
DE69012882D1 (de) Herstellung von Stickstoffzusammensetzungen.
DE69003091D1 (de) Herstellung von Siliciumcarbidgegenständen.
DE68919124D1 (de) Herstellung von Alkylsilanen.
DE69207629D1 (de) Herstellung von Siloxanen
DE69101849D1 (de) Herstellung von Amiden.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee