DE69112171D1 - Feldemissionseinrichtung und Herstellungsverfahren. - Google Patents

Feldemissionseinrichtung und Herstellungsverfahren.

Info

Publication number
DE69112171D1
DE69112171D1 DE69112171T DE69112171T DE69112171D1 DE 69112171 D1 DE69112171 D1 DE 69112171D1 DE 69112171 T DE69112171 T DE 69112171T DE 69112171 T DE69112171 T DE 69112171T DE 69112171 D1 DE69112171 D1 DE 69112171D1
Authority
DE
Germany
Prior art keywords
manufacturing process
field emission
emission device
field
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112171T
Other languages
English (en)
Other versions
DE69112171T2 (de
Inventor
Hidetoshi Watanabe
Hiroshi Komatsu
Toshiaki Hasegawa
Toshiyuki Ishimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP29318390A external-priority patent/JP3033178B2/ja
Priority claimed from JP29318490A external-priority patent/JP3033179B2/ja
Priority claimed from JP29318290A external-priority patent/JP2969913B2/ja
Priority claimed from JP1472691A external-priority patent/JP3094464B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69112171D1 publication Critical patent/DE69112171D1/de
Publication of DE69112171T2 publication Critical patent/DE69112171T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/1216—Continuous interengaged phases of plural metals, or oriented fiber containing
    • Y10T428/12174—Mo or W containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69112171T 1990-10-30 1991-10-30 Feldemissionseinrichtung und Herstellungsverfahren. Expired - Fee Related DE69112171T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP29318390A JP3033178B2 (ja) 1990-10-30 1990-10-30 電界放出型エミッタ
JP29318490A JP3033179B2 (ja) 1990-10-30 1990-10-30 電界放出型エミッタ及びその製造方法
JP29318290A JP2969913B2 (ja) 1990-10-30 1990-10-30 電界放出型エミッタ
JP1472691A JP3094464B2 (ja) 1991-01-14 1991-01-14 電界放出型マイクロカソードの製造方法

Publications (2)

Publication Number Publication Date
DE69112171D1 true DE69112171D1 (de) 1995-09-21
DE69112171T2 DE69112171T2 (de) 1996-05-02

Family

ID=27456269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112171T Expired - Fee Related DE69112171T2 (de) 1990-10-30 1991-10-30 Feldemissionseinrichtung und Herstellungsverfahren.

Country Status (4)

Country Link
US (1) US5332627A (de)
EP (1) EP0483814B1 (de)
KR (1) KR100238696B1 (de)
DE (1) DE69112171T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2070478A1 (en) * 1991-06-27 1992-12-28 Wolfgang M. Feist Fabrication method for field emission arrays
KR100282261B1 (ko) * 1993-12-24 2001-05-02 김순택 전계방출 캐소드 어레이 및 이의 제조방법
FR2723471B1 (fr) * 1994-08-05 1996-10-31 Pixel Int Sa Cathode d'ecran plat de visualisation a resistance d'acces constante
EP0713236A1 (de) * 1994-11-18 1996-05-22 Texas Instruments Incorporated Elektron-emittierenden Vorrichtung
US5550065A (en) * 1994-11-25 1996-08-27 Motorola Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact
JPH08222126A (ja) * 1995-02-13 1996-08-30 Nec Kansai Ltd 電界放出冷陰極の製造方法
US6033277A (en) * 1995-02-13 2000-03-07 Nec Corporation Method for forming a field emission cold cathode
US5594297A (en) * 1995-04-19 1997-01-14 Texas Instruments Incorporated Field emission device metallization including titanium tungsten and aluminum
KR100343213B1 (ko) * 1995-11-14 2002-11-27 삼성에스디아이 주식회사 전계방출소자의제조방법
DE69518849T2 (de) * 1995-12-14 2001-01-11 St Microelectronics Srl Verfahren zur Herstellung einer Mikrospitzenkathodenstruktur für eine Feldemissionsanzeigetafel
JP3079993B2 (ja) * 1996-03-27 2000-08-21 日本電気株式会社 真空マイクロデバイスおよびその製造方法
JPH11195711A (ja) * 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
JPH11195753A (ja) * 1997-10-27 1999-07-21 Seiko Epson Corp 半導体装置およびその製造方法
US6255772B1 (en) 1998-02-27 2001-07-03 Micron Technology, Inc. Large-area FED apparatus and method for making same
WO2000034980A1 (en) * 1998-12-08 2000-06-15 Koninklijke Philips Electronics N.V. Electric lamp
KR100296879B1 (ko) * 1999-06-18 2001-07-12 김순택 전계 방출 표시소자의 제조방법
KR20010003752A (ko) * 1999-06-25 2001-01-15 김영환 전계방출 표시소자의 제조방법
US6342755B1 (en) 1999-08-11 2002-01-29 Sony Corporation Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles
US6462467B1 (en) 1999-08-11 2002-10-08 Sony Corporation Method for depositing a resistive material in a field emission cathode
US6384520B1 (en) 1999-11-24 2002-05-07 Sony Corporation Cathode structure for planar emitter field emission displays
US6958499B2 (en) * 2002-12-11 2005-10-25 Electronics And Telecommunications Research Institute Triode field emission device having mesh gate and field emission display using the same
KR100523840B1 (ko) * 2003-08-27 2005-10-27 한국전자통신연구원 전계 방출 소자
US20080185667A1 (en) * 2004-09-17 2008-08-07 Kenichi Yoshino Thin Film Semiconductor Device and Method for Manufacturing the Same
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
KR100971658B1 (ko) * 2008-01-03 2010-07-22 엘지전자 주식회사 실리콘 태양전지의 텍스처링 방법
RU2434634C1 (ru) * 2008-02-08 2011-11-27 Шисейдо Компани Лтд. Отбеливающий агент и композиция для кожи для наружного применения
CN113675057B (zh) * 2021-07-12 2023-11-03 郑州大学 一种自对准石墨烯场发射栅极结构及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
JPS61166075A (ja) * 1985-01-17 1986-07-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
DE3856492T2 (de) * 1987-02-06 2002-10-31 Canon Kk Ein Elektronenemissionselement enthaltende Anzeigevorrichtung
ATE81565T1 (de) * 1987-04-22 1992-10-15 Christensen Alton O Feldemissionsvorrichtung.
US4904895A (en) * 1987-05-06 1990-02-27 Canon Kabushiki Kaisha Electron emission device

Also Published As

Publication number Publication date
KR100238696B1 (ko) 2000-01-15
US5332627A (en) 1994-07-26
DE69112171T2 (de) 1996-05-02
EP0483814A3 (en) 1992-10-28
EP0483814B1 (de) 1995-08-16
EP0483814A2 (de) 1992-05-06
KR920008961A (ko) 1992-05-28

Similar Documents

Publication Publication Date Title
DE69112171D1 (de) Feldemissionseinrichtung und Herstellungsverfahren.
DE69114067D1 (de) Plattengerät und sein Herstellungsverfahren.
DE69104572D1 (de) Auftrieberzeugende Vorrichtung und damit ausgerüstetes Luftschiff.
DE69000467D1 (de) Bis-aza-bicyclische anxiolytica und antidepressiva.
DE69116859D1 (de) Elektronenquelle und herstellungsverfahren
DE69130375T2 (de) Mehrfache Strahlaustastblendenvorrichtung und Herstellungsverfahren derselben
DE69226106D1 (de) Datenbankherstellungsverfahren und Gerät
DE69114968D1 (de) Entwicklungsverfahren und Vorrichtung.
DE69015403D1 (de) Entwicklungsverfahren und -gerät.
DE69006997T2 (de) Bilderzeugungsverfahren- und -gerät.
DE69205022D1 (de) Organopentasiloxan und sein Herstellungsverfahren.
DE69111018D1 (de) Arbeitsbühne und Herstellungsverfahren.
IT8921590A0 (it) Procedimento e dispositivo di formatura.
DE69114435D1 (de) Supraleitendes Bauelement und dessen Herstellungsverfahren.
DE69011337D1 (de) Polyhalodihydrodioxine und polyhalodioxole.
DE69205546D1 (de) Kältegerät und Kälteverfahren.
DE69202426D1 (de) Ablenkeinheit und Herstellungsverfahren.
DE69001135T2 (de) Loetverfahren und loetgeraet.
DE69109919D1 (de) BiCMOS-Bauelement mit engbenachbarten Kontakten und dessen Herstellungsverfahren.
DE68907375D1 (de) Elektronenroehrenanordnung und elektronenroehre.
IT1234175B (it) Metodo e dispositivo survoltore.
DE69201082T2 (de) Dämpfungsvorrichtung und Herstellungsverfahren.
DE69113366T2 (de) Triazolverbindung und insektizid.
ES1012211Y (es) Dispositivo ambientador.
KR920010942A (ko) I²l소자 및 그 제조방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee