DE69111672D1 - Verfahren und Vorrichtung zur Messung der Schwingung einer Schmelzenoberfläche. - Google Patents

Verfahren und Vorrichtung zur Messung der Schwingung einer Schmelzenoberfläche.

Info

Publication number
DE69111672D1
DE69111672D1 DE69111672T DE69111672T DE69111672D1 DE 69111672 D1 DE69111672 D1 DE 69111672D1 DE 69111672 T DE69111672 T DE 69111672T DE 69111672 T DE69111672 T DE 69111672T DE 69111672 D1 DE69111672 D1 DE 69111672D1
Authority
DE
Germany
Prior art keywords
vibration
measuring
melt surface
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69111672T
Other languages
English (en)
Other versions
DE69111672T2 (de
Inventor
Masahiko A- - Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69111672D1 publication Critical patent/DE69111672D1/de
Application granted granted Critical
Publication of DE69111672T2 publication Critical patent/DE69111672T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Image Processing (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Image Analysis (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
DE69111672T 1990-04-29 1991-04-27 Verfahren und Vorrichtung zur Messung der Schwingung einer Schmelzenoberfläche. Expired - Fee Related DE69111672T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2113289A JPH0663824B2 (ja) 1990-04-29 1990-04-29 湯面振動測定方法及び装置

Publications (2)

Publication Number Publication Date
DE69111672D1 true DE69111672D1 (de) 1995-09-07
DE69111672T2 DE69111672T2 (de) 1996-01-25

Family

ID=14608411

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69111672T Expired - Fee Related DE69111672T2 (de) 1990-04-29 1991-04-27 Verfahren und Vorrichtung zur Messung der Schwingung einer Schmelzenoberfläche.

Country Status (4)

Country Link
US (1) US5170061A (de)
EP (1) EP0455186B1 (de)
JP (1) JPH0663824B2 (de)
DE (1) DE69111672T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4231162C2 (de) * 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
JP2538748B2 (ja) * 1992-11-27 1996-10-02 信越半導体株式会社 結晶径測定装置
JP2823035B2 (ja) * 1993-02-10 1998-11-11 信越半導体株式会社 半導体単結晶の引上装置及び引上方法
JPH06279170A (ja) * 1993-03-29 1994-10-04 Sumitomo Sitix Corp 単結晶の製造方法及びその装置
JPH08133887A (ja) * 1994-11-11 1996-05-28 Komatsu Electron Metals Co Ltd 半導体単結晶の直径検出装置
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5578284A (en) * 1995-06-07 1996-11-26 Memc Electronic Materials, Inc. Silicon single crystal having eliminated dislocation in its neck
US5656078A (en) * 1995-11-14 1997-08-12 Memc Electronic Materials, Inc. Non-distorting video camera for use with a system for controlling growth of a silicon crystal
JP3099724B2 (ja) * 1996-03-15 2000-10-16 住友金属工業株式会社 シリコン単結晶のねじれ振動検知装置及びねじれ振動検知方法並びにそれを用いた単結晶の製造方法
US6226032B1 (en) 1996-07-16 2001-05-01 General Signal Corporation Crystal diameter control system
US5935322A (en) * 1997-04-15 1999-08-10 Komatsu Electronic Metals Co., Ltd. Method of pulling up a single crystal semiconductor
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
US5935321A (en) * 1997-08-01 1999-08-10 Motorola, Inc. Single crystal ingot and method for growing the same
US5882402A (en) * 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5922127A (en) * 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US6106612A (en) * 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
US6171391B1 (en) 1998-10-14 2001-01-09 Memc Electronic Materials, Inc. Method and system for controlling growth of a silicon crystal
US6111262A (en) * 1998-10-30 2000-08-29 Sumitomo Metal Industries, Ltd. Method for measuring a diameter of a crystal
US6241818B1 (en) * 1999-04-07 2001-06-05 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
US20030051658A1 (en) * 2001-07-27 2003-03-20 Shigemasa Nakagawa Method and apparatus for controlling the oxygen concentration of a silicon single crystal, and method and apparatus for providing guidance for controlling the oxygen concentration
JP4288652B2 (ja) * 2002-10-22 2009-07-01 ジャパンスーパークォーツ株式会社 溶融シリコンの湯面振動の判定方法
JP4918897B2 (ja) * 2007-08-29 2012-04-18 株式会社Ｓｕｍｃｏ シリコン単結晶引上方法
JP5409215B2 (ja) * 2009-09-07 2014-02-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶引上装置
DE102016201778A1 (de) * 2016-02-05 2017-08-10 Siltronic Ag Verfahren zum Ermitteln und Regeln eines Durchmessers eines Einkristalls beim Ziehen des Einkristalls

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
US4710258A (en) * 1984-11-30 1987-12-01 General Signal Corporation System for controlling the diameter of a crystal in a crystal growing furnace
JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置
JPS63242991A (ja) * 1987-03-31 1988-10-07 Shin Etsu Handotai Co Ltd 結晶径制御方法
JP2601930B2 (ja) * 1990-03-29 1997-04-23 信越半導体株式会社 単結晶ネツク部直径制御方法及び装置

Also Published As

Publication number Publication date
JPH0412233A (ja) 1992-01-16
US5170061A (en) 1992-12-08
EP0455186A1 (de) 1991-11-06
EP0455186B1 (de) 1995-08-02
JPH0663824B2 (ja) 1994-08-22
DE69111672T2 (de) 1996-01-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee