DE69110029D1 - Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers. - Google Patents
Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers.Info
- Publication number
- DE69110029D1 DE69110029D1 DE69110029T DE69110029T DE69110029D1 DE 69110029 D1 DE69110029 D1 DE 69110029D1 DE 69110029 T DE69110029 T DE 69110029T DE 69110029 T DE69110029 T DE 69110029T DE 69110029 D1 DE69110029 D1 DE 69110029D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductors
- wafers
- controlling
- production
- thermal treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000007669 thermal treatment Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3015679A JPH04243126A (ja) | 1991-01-17 | 1991-01-17 | 半導体製造装置及びその制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69110029D1 true DE69110029D1 (de) | 1995-06-29 |
DE69110029T2 DE69110029T2 (de) | 1996-02-01 |
Family
ID=11895439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69110029T Expired - Fee Related DE69110029T2 (de) | 1991-01-17 | 1991-10-30 | Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5245158A (de) |
EP (1) | EP0495294B1 (de) |
JP (1) | JPH04243126A (de) |
KR (1) | KR960006690B1 (de) |
DE (1) | DE69110029T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4306398A1 (de) * | 1993-03-02 | 1994-09-08 | Leybold Ag | Vorrichtung zum Erwärmen eines Substrates |
JP3180603B2 (ja) * | 1995-02-07 | 2001-06-25 | 信越化学工業株式会社 | 金属窒化物製造用流動層反応装置 |
TW291589B (de) * | 1995-03-30 | 1996-11-21 | Ftl Co Ltd | |
US5662470A (en) * | 1995-03-31 | 1997-09-02 | Asm International N.V. | Vertical furnace |
US5820366A (en) * | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
US6310328B1 (en) | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3385921A (en) * | 1967-06-21 | 1968-05-28 | Electroglas Inc | Diffusion furnace with high speed recovery |
US4526534A (en) * | 1983-06-01 | 1985-07-02 | Quartz Engineering & Materials, Inc. | Cantilever diffusion tube apparatus and method |
US4573431A (en) * | 1983-11-16 | 1986-03-04 | Btu Engineering Corporation | Modular V-CVD diffusion furnace |
US4610628A (en) * | 1983-12-28 | 1986-09-09 | Denkoh Co., Ltd. | Vertical furnace for heat-treating semiconductor |
JPS6120318A (ja) * | 1984-07-06 | 1986-01-29 | Toshiba Corp | 縦型拡散炉 |
US4543059A (en) * | 1984-07-18 | 1985-09-24 | Quartz Engineering & Materials, Inc. | Slotted cantilever diffusion tube system and method and apparatus for loading |
JPS61260624A (ja) * | 1985-05-14 | 1986-11-18 | Matsushita Electric Ind Co Ltd | 赤外線ランプ熱処理装置 |
US4957781A (en) * | 1985-07-22 | 1990-09-18 | Hitachi, Ltd. | Processing apparatus |
JPS6221229A (ja) * | 1985-07-22 | 1987-01-29 | Hitachi Ltd | 処理装置 |
JPS6245020A (ja) * | 1985-08-23 | 1987-02-27 | Toshiba Corp | 半導体加熱用石英管のシ−ル方法 |
JPS62269313A (ja) * | 1986-05-16 | 1987-11-21 | Mitsubishi Electric Corp | 半導体製造装置 |
JP2690902B2 (ja) * | 1986-07-23 | 1997-12-17 | 株式会社日立製作所 | ウエハ面内熱応力転位発生抑制方法 |
JPS6366927A (ja) * | 1986-09-08 | 1988-03-25 | Toshiba Corp | 熱処理装置 |
JPS63133520A (ja) * | 1986-11-25 | 1988-06-06 | Nec Corp | 半導体装置製造用拡散炉 |
KR970008320B1 (ko) * | 1987-11-17 | 1997-05-23 | 도오교오 에레구토론 가부시끼가이샤 | 열처리 장치 |
KR0139816B1 (ko) * | 1988-02-26 | 1998-07-15 | 노보루 후세 | 열처리 장치 및 열처리 방법 |
JP2773150B2 (ja) * | 1988-09-08 | 1998-07-09 | 日本電気株式会社 | 半導体装置の製造装置 |
JP2748325B2 (ja) * | 1989-03-20 | 1998-05-06 | 富士通株式会社 | 半導体ウェハの加熱処理方法 |
JPH03194933A (ja) * | 1989-12-22 | 1991-08-26 | Tokyo Electron Sagami Ltd | 処理装置 |
US5000682A (en) * | 1990-01-22 | 1991-03-19 | Semitherm | Vertical thermal processor for semiconductor wafers |
-
1991
- 1991-01-17 JP JP3015679A patent/JPH04243126A/ja active Pending
- 1991-09-30 US US07/767,684 patent/US5245158A/en not_active Expired - Fee Related
- 1991-10-30 EP EP91310019A patent/EP0495294B1/de not_active Expired - Lifetime
- 1991-10-30 DE DE69110029T patent/DE69110029T2/de not_active Expired - Fee Related
- 1991-11-16 KR KR1019910020402A patent/KR960006690B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR960006690B1 (ko) | 1996-05-22 |
EP0495294A1 (de) | 1992-07-22 |
JPH04243126A (ja) | 1992-08-31 |
US5245158A (en) | 1993-09-14 |
DE69110029T2 (de) | 1996-02-01 |
EP0495294B1 (de) | 1995-05-24 |
KR920015486A (ko) | 1992-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |