DE69101693D1 - Halbleiter-Wellenlängenwandler. - Google Patents
Halbleiter-Wellenlängenwandler.Info
- Publication number
- DE69101693D1 DE69101693D1 DE69101693T DE69101693T DE69101693D1 DE 69101693 D1 DE69101693 D1 DE 69101693D1 DE 69101693 T DE69101693 T DE 69101693T DE 69101693 T DE69101693 T DE 69101693T DE 69101693 D1 DE69101693 D1 DE 69101693D1
- Authority
- DE
- Germany
- Prior art keywords
- wavelength converter
- semiconductor wavelength
- semiconductor
- converter
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/026—Optical bistable devices based on laser effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29987590 | 1990-11-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69101693D1 true DE69101693D1 (de) | 1994-05-19 |
DE69101693T2 DE69101693T2 (de) | 1994-08-11 |
Family
ID=17878015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69101693T Expired - Fee Related DE69101693T2 (de) | 1990-11-07 | 1991-11-06 | Halbleiter-Wellenlängenwandler. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5155737A (de) |
EP (1) | EP0484923B1 (de) |
DE (1) | DE69101693T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05145178A (ja) * | 1991-11-18 | 1993-06-11 | Furukawa Electric Co Ltd:The | 歪量子井戸半導体レーザ素子 |
US5325392A (en) * | 1992-03-06 | 1994-06-28 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
EP0585758B1 (de) * | 1992-08-26 | 1998-10-14 | Sony Corporation | Optischer Wellenlängenkonverter |
US5469459A (en) * | 1993-01-08 | 1995-11-21 | Nec Corporation | Laser diode element with excellent intermodulation distortion characteristic |
JP3210159B2 (ja) * | 1993-12-10 | 2001-09-17 | キヤノン株式会社 | 半導体レーザ、光源装置、光通信システム及び光通信方法 |
JP3263553B2 (ja) * | 1994-02-23 | 2002-03-04 | キヤノン株式会社 | 光送信機 |
JPH07307530A (ja) * | 1994-03-17 | 1995-11-21 | Canon Inc | 偏波変調可能な半導体レーザ |
US5754714A (en) * | 1994-09-17 | 1998-05-19 | Kabushiki Kaisha Toshiba | Semiconductor optical waveguide device, optical control type optical switch, and wavelength conversion device |
JPH09311220A (ja) * | 1996-03-19 | 1997-12-02 | Canon Inc | 異なる偏光依存性を持つ領域が交互に配置された回折格子、及びそれを用いた光半導体デバイス |
JP2937148B2 (ja) * | 1996-11-06 | 1999-08-23 | 日本電気株式会社 | 半導体集積型偏波モード変換器 |
US5784399A (en) * | 1996-12-19 | 1998-07-21 | Xerox Corporation | Polarization mode selection by distributed Bragg reflector in a quantum well laser |
JP3682367B2 (ja) * | 1998-01-28 | 2005-08-10 | パイオニア株式会社 | 分布帰還型半導体レーザ |
JP3349945B2 (ja) * | 1998-03-13 | 2002-11-25 | 日本電気株式会社 | 信号変換装置及び信号変換装置を用いた光伝送方式 |
US6816518B2 (en) * | 2001-03-20 | 2004-11-09 | Cyoptics (Israel) Ltd. | Wavelength tunable high repetition rate optical pulse generator |
JP3682417B2 (ja) * | 2001-05-01 | 2005-08-10 | 古河電気工業株式会社 | 半導体レーザ装置、半導体レーザモジュールおよびこれを用いたラマン増幅器 |
US6628686B1 (en) * | 2001-11-16 | 2003-09-30 | Fox-Tek, Inc | Integrated multi-wavelength and wideband lasers |
GB0206226D0 (en) * | 2002-03-16 | 2002-05-01 | Intense Photonics Ltd | Electro-absorption modulator with broad optical bandwidth |
KR100799797B1 (ko) * | 2003-03-31 | 2008-02-01 | 니폰덴신뎅와 가부시키가이샤 | 광반도체 소자 및 광반도체 집적회로 |
FR2973594B1 (fr) * | 2011-03-31 | 2013-03-29 | Thales Sa | Systeme d'emission de signal optique |
DE102012109175B4 (de) | 2012-09-27 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Halbleiterlaserdiode |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4888783A (en) * | 1987-03-20 | 1989-12-19 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
JPH0656908B2 (ja) * | 1987-03-31 | 1994-07-27 | 日本電信電話株式会社 | 波長変換素子 |
US4910738A (en) * | 1987-11-27 | 1990-03-20 | Matsushita Electric Industrial Co., Ltd. | Short optical pulse generators using mode-locked semiconductor lasers oscillating in transverse magnetic modes |
JPH02152289A (ja) * | 1988-12-02 | 1990-06-12 | Sumitomo Electric Ind Ltd | 光増幅装置 |
US5040183A (en) * | 1990-07-20 | 1991-08-13 | At&T Bell Laboratories | Apparatus comprising optical pulse-generating means |
-
1991
- 1991-11-06 US US07/788,784 patent/US5155737A/en not_active Expired - Fee Related
- 1991-11-06 DE DE69101693T patent/DE69101693T2/de not_active Expired - Fee Related
- 1991-11-06 EP EP91118937A patent/EP0484923B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0484923A2 (de) | 1992-05-13 |
EP0484923A3 (en) | 1992-06-03 |
US5155737A (en) | 1992-10-13 |
DE69101693T2 (de) | 1994-08-11 |
EP0484923B1 (de) | 1994-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |