DE69030347D1 - Plasmaprozess, Verfahren und Gerät - Google Patents

Plasmaprozess, Verfahren und Gerät

Info

Publication number
DE69030347D1
DE69030347D1 DE69030347T DE69030347T DE69030347D1 DE 69030347 D1 DE69030347 D1 DE 69030347D1 DE 69030347 T DE69030347 T DE 69030347T DE 69030347 T DE69030347 T DE 69030347T DE 69030347 D1 DE69030347 D1 DE 69030347D1
Authority
DE
Germany
Prior art keywords
procedure
plasma process
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030347T
Other languages
English (en)
Other versions
DE69030347T2 (de
Inventor
Donald M Mintz
Hiroji Hanawa
Sasson Somekh
Dan Maydan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23651158&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69030347(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69030347D1 publication Critical patent/DE69030347D1/de
Application granted granted Critical
Publication of DE69030347T2 publication Critical patent/DE69030347T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69030347T 1989-10-03 1990-10-04 Plasmaprozess, Verfahren und Gerät Expired - Fee Related DE69030347T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41675089A 1989-10-03 1989-10-03

Publications (2)

Publication Number Publication Date
DE69030347D1 true DE69030347D1 (de) 1997-05-07
DE69030347T2 DE69030347T2 (de) 1997-07-17

Family

ID=23651158

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030347T Expired - Fee Related DE69030347T2 (de) 1989-10-03 1990-10-04 Plasmaprozess, Verfahren und Gerät

Country Status (5)

Country Link
EP (1) EP0421430B2 (de)
JP (2) JP2634313B2 (de)
KR (1) KR0170387B1 (de)
DE (1) DE69030347T2 (de)
ES (1) ES2100859T3 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
WO1993021685A1 (en) * 1992-04-16 1993-10-28 Advanced Energy Industries, Inc. Stabilizer for switch-mode powered rf plasma processing
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5962923A (en) 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US6902683B1 (en) 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
EP1034566A1 (de) 1997-11-26 2000-09-13 Applied Materials, Inc. Zerstörungsfreie beschichtungsmethode
KR100521120B1 (ko) * 1998-02-13 2005-10-12 가부시끼가이샤 히다치 세이사꾸쇼 반도체소자의 표면처리방법 및 장치
US6143144A (en) * 1999-07-30 2000-11-07 Tokyo Electronlimited Method for etch rate enhancement by background oxygen control in a soft etch system
JP4666740B2 (ja) * 2000-10-06 2011-04-06 川崎マイクロエレクトロニクス株式会社 半導体製造装置、被処理基板表面の処理方法およびプラズマ生成物の付着状態の観察方法
WO2003036703A1 (en) * 2001-10-22 2003-05-01 Unaxis Usa, Inc. Process and apparatus for etching of thin, damage sensitive layers using high frequency pulsed plasma
DE10318566B4 (de) * 2003-04-15 2005-11-17 Fresnel Optics Gmbh Verfahren und Werkzeug zur Herstellung transparenter optischer Elemente aus polymeren Werkstoffen
KR101151414B1 (ko) 2010-02-23 2012-06-04 주식회사 플라즈마트 임피던스 정합 장치
US8576013B2 (en) * 2011-12-29 2013-11-05 Mks Instruments, Inc. Power distortion-based servo control systems for frequency tuning RF power sources
CN103456591B (zh) * 2012-05-31 2016-04-06 中微半导体设备(上海)有限公司 自动频率调谐源和偏置射频电源的电感耦合等离子处理室
CN104583468A (zh) * 2012-08-31 2015-04-29 欧瑞康高级技术股份公司 用于沉积氮化铝层的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4375051A (en) * 1981-02-19 1983-02-22 The Perkin-Elmer Corporation Automatic impedance matching between source and load
US4585668A (en) * 1983-02-28 1986-04-29 Michigan State University Method for treating a surface with a microwave or UHF plasma and improved apparatus
JPS6094725A (ja) * 1983-10-28 1985-05-27 Hitachi Ltd ドライエツチング装置
US4572759A (en) * 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement
JPS62125626A (ja) * 1985-11-27 1987-06-06 Hitachi Ltd ドライエツチング装置
JPH0831438B2 (ja) † 1986-02-19 1996-03-27 株式会社日立製作所 マイクロ波プラズマ処理装置
JPS62280379A (ja) † 1986-05-30 1987-12-05 Hitachi Ltd エツチング装置
CH668145A5 (fr) † 1986-09-26 1988-11-30 Inst Microtechnique De L Unive Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma.
EP0277460A1 (de) * 1986-12-16 1988-08-10 Plasma-Seven S.A. Verfahren zur Wiedergabe der metallischen Struktur in einer degradierten Oberfläche eines metallischen Objekts, Anwendung und Vorrichtung zur Ausarbeitung dieses Verfahrens
JPS63279609A (ja) * 1987-05-11 1988-11-16 Shindengen Electric Mfg Co Ltd Ｒｆ発生装置の自動整合装置
US5079031A (en) * 1988-03-22 1992-01-07 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for forming thin films
JPH024238U (de) * 1988-06-20 1990-01-11
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置

Also Published As

Publication number Publication date
JP2634313B2 (ja) 1997-07-23
KR0170387B1 (ko) 1999-03-30
JP3236216B2 (ja) 2001-12-10
JPH03171623A (ja) 1991-07-25
EP0421430A3 (en) 1991-08-14
ES2100859T3 (es) 1997-07-01
EP0421430B2 (de) 2003-12-10
EP0421430B1 (de) 1997-04-02
JPH09232292A (ja) 1997-09-05
EP0421430A2 (de) 1991-04-10
KR910008796A (ko) 1991-05-31
DE69030347T2 (de) 1997-07-17

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee