DE69026492D1 - Siliciumnitridkörper - Google Patents
SiliciumnitridkörperInfo
- Publication number
- DE69026492D1 DE69026492D1 DE69026492T DE69026492T DE69026492D1 DE 69026492 D1 DE69026492 D1 DE 69026492D1 DE 69026492 T DE69026492 T DE 69026492T DE 69026492 T DE69026492 T DE 69026492T DE 69026492 D1 DE69026492 D1 DE 69026492D1
- Authority
- DE
- Germany
- Prior art keywords
- silicon nitride
- nitride body
- silicon
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
- C04B35/5935—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering obtained by gas pressure sintering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011780A JPH089506B2 (ja) | 1990-01-23 | 1990-01-23 | 窒化珪素体 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69026492D1 true DE69026492D1 (de) | 1996-05-15 |
DE69026492T2 DE69026492T2 (de) | 1996-10-31 |
Family
ID=11787468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1990626492 Expired - Fee Related DE69026492T2 (de) | 1990-01-23 | 1990-12-18 | Siliciumnitridkörper |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0438897B1 (de) |
JP (1) | JPH089506B2 (de) |
DE (1) | DE69026492T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69316118T2 (de) * | 1992-09-08 | 1998-04-23 | Toshiba Kawasaki Kk | Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung |
JP2871410B2 (ja) * | 1992-09-08 | 1999-03-17 | 株式会社東芝 | 高熱伝導性窒化けい素焼結体およびその製造方法 |
KR0143870B1 (ko) * | 1993-12-27 | 1998-07-01 | 사토 후미오 | 고열전도성 질화규소 구조부재 및 반도체 패키지, 히터, 서멀헤드 |
CN1139117C (zh) * | 1995-03-20 | 2004-02-18 | 株式会社东芝 | 氮化硅电路板 |
KR0166406B1 (ko) * | 1995-06-23 | 1999-01-15 | 니시무로 타이조 | 고열전도성 질화규소 소결체, 그 제조방법 및 압접구조체 |
JP3561145B2 (ja) * | 1998-04-27 | 2004-09-02 | 京セラ株式会社 | 窒化珪素質放熱部材及びその製造方法 |
JPH11180774A (ja) * | 1997-12-22 | 1999-07-06 | Kyocera Corp | 窒化珪素質放熱部材及びその製造方法 |
US6617272B2 (en) | 1998-03-05 | 2003-09-09 | Sumitomo Electric Industries, Ltd. | Si3N4 sintered body with high thermal conductivity and method for producing the same |
JPH11314969A (ja) * | 1998-03-05 | 1999-11-16 | Sumitomo Electric Ind Ltd | 高熱伝導性Si3N4焼結体及びその製造方法 |
JP4571728B2 (ja) * | 1999-06-23 | 2010-10-27 | 日本碍子株式会社 | 窒化珪素焼結体及びその製造方法 |
US6391812B1 (en) | 1999-06-23 | 2002-05-21 | Ngk Insulators, Ltd. | Silicon nitride sintered body and method of producing the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54107913A (en) * | 1978-02-10 | 1979-08-24 | Tokyo Shibaura Electric Co | Productuon of silicon nitride sintered body |
JPS55104975A (en) * | 1979-02-02 | 1980-08-11 | Asahi Glass Co Ltd | Manufacture of silicon nitride sintered body |
JPS6116748A (ja) * | 1984-07-04 | 1986-01-24 | エイ・エツチ・エス・ジヤパン株式会社 | 人工呼吸装置 |
JPS63100067A (ja) * | 1986-06-12 | 1988-05-02 | 日本碍子株式会社 | 窒化珪素焼結体およびその製造法 |
JPH01138173A (ja) * | 1987-11-25 | 1989-05-31 | Toyota Motor Corp | 窒化ケイ素焼結体 |
WO1990008113A1 (en) * | 1989-01-17 | 1990-07-26 | Allied-Signal Inc. | Super tough monolithic silicon nitride |
-
1990
- 1990-01-23 JP JP2011780A patent/JPH089506B2/ja not_active Expired - Lifetime
- 1990-12-18 DE DE1990626492 patent/DE69026492T2/de not_active Expired - Fee Related
- 1990-12-18 EP EP90313843A patent/EP0438897B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0438897A1 (de) | 1991-07-31 |
JPH089506B2 (ja) | 1996-01-31 |
JPH03218975A (ja) | 1991-09-26 |
DE69026492T2 (de) | 1996-10-31 |
EP0438897B1 (de) | 1996-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69132354D1 (de) | Halbleitervorrichtung | |
DE69132627D1 (de) | Halbleiter-bauteil | |
DE69127314D1 (de) | Diamant-Halbleiteranordnung | |
NO175484C (no) | Silisiumkarbid - slipemiddel | |
DK0468157T3 (da) | Borepatron | |
DK0468128T3 (da) | Borepatron | |
DE69110480D1 (de) | Verbesserter halbleiter-microanemometer. | |
DE69119980D1 (de) | Polysilethylensiloxan | |
DE69102836D1 (de) | Halbleitersensor. | |
DE69122559D1 (de) | Polysilethylensiloxan | |
KR900007722A (ko) | 질화규소기재 소결체(Silicon Nitride Base Sintered Body) | |
DE3679646D1 (de) | Siliziumnitridsinterformkoerper. | |
DE68910363D1 (de) | Siliciumnitrid-Sinterkörper. | |
DE69131118D1 (de) | Halbleitereinheit | |
ITMI912655A1 (it) | Combinazione di estrusore-calandra. | |
DE69026492D1 (de) | Siliciumnitridkörper | |
DE69317254D1 (de) | Siliciumnitrid-Sinterkörper | |
ITTO910643A0 (it) | Procedimento di galvanostegia | |
DE3767337D1 (de) | Gesinterte siliziumnitridformkoerper. | |
DE3886319D1 (de) | Si/SiGe-Halbleiterkörper. | |
DE69109312D1 (de) | Halbleitersensor. | |
DE69127494D1 (de) | Halbleiteranordnung | |
EP0484916A3 (en) | Silicon nitride sintered body | |
DE68910231D1 (de) | Siliciumnitrid-Sinterkörper. | |
DE68906838D1 (de) | Siliciumnitrid-sinterkoerper. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |