DE69020200T2 - Verfahren zum Entfernen von Titannitrid. - Google Patents

Verfahren zum Entfernen von Titannitrid.

Info

Publication number: DE69020200T2
Authority: DE; Germany
Prior art keywords: titanium nitride; removal process; nitride removal; titanium; removal
Prior art date: 1989-03-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69020200T

Other languages

English (en)

Other versions

DE69020200D1 (de

Inventor

James Howard Knapp

George Francis Carney

Francis Joseph Carney

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NXP USA Inc

Original Assignee

Motorola Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-03-23

Filing date

1990-03-12

Publication date

1996-02-01

1990-03-12 Application filed by Motorola Inc filed Critical Motorola Inc

1995-07-27 Publication of DE69020200D1 publication Critical patent/DE69020200D1/de

1996-02-01 Application granted granted Critical

1996-02-01 Publication of DE69020200T2 publication Critical patent/DE69020200T2/de

2010-03-13 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents

Landscapes

Chemical & Material Sciences (AREA)
Metallurgy (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
ing And Chemical Polishing (AREA)
Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Arc Welding In General (AREA)
Chemical Vapour Deposition (AREA)
Cleaning In General (AREA)

DE69020200T 1989-03-23 1990-03-12 Verfahren zum Entfernen von Titannitrid. Expired - Lifetime DE69020200T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/327,630 US4877482A (en)	1989-03-23	1989-03-23	Nitride removal method

Publications (2)

Publication Number	Publication Date
DE69020200D1 DE69020200D1 (de)	1995-07-27
DE69020200T2 true DE69020200T2 (de)	1996-02-01

Family

ID=23277347

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69020200T Expired - Lifetime DE69020200T2 (de)	1989-03-23	1990-03-12	Verfahren zum Entfernen von Titannitrid.

Country Status (7)

Country	Link
US (1)	US4877482A (de)
EP (1)	EP0388749B1 (de)
JP (1)	JP2903607B2 (de)
KR (1)	KR100204199B1 (de)
CA (1)	CA2002861C (de)
DE (1)	DE69020200T2 (de)
MY (1)	MY105247A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01252581A (ja) *	1988-03-31	1989-10-09	Taiyo Yuden Co Ltd	窒化物セラミツクスの製造方法
US4975146A (en) *	1989-09-08	1990-12-04	Motorola Inc.	Plasma removal of unwanted material
JPH06285868A (ja) *	1993-03-30	1994-10-11	Bridgestone Corp	加硫金型の清浄方法
US5486267A (en) *	1994-02-28	1996-01-23	International Business Machines Corporation	Method for applying photoresist
US6060397A (en) *	1995-07-14	2000-05-09	Applied Materials, Inc.	Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
US5872062A (en) *	1996-05-20	1999-02-16	Taiwan Semiconductor Manufacturing Company, Ltd.	Method for etching titanium nitride layers
US5948702A (en) *	1996-12-19	1999-09-07	Texas Instruments Incorporated	Selective removal of TixNy
US6261934B1 (en)	1998-03-31	2001-07-17	Texas Instruments Incorporated	Dry etch process for small-geometry metal gates over thin gate dielectric
US6841008B1 (en) *	2000-07-17	2005-01-11	Cypress Semiconductor Corporation	Method for cleaning plasma etch chamber structures
US6576563B2 (en) *	2001-10-26	2003-06-10	Agere Systems Inc.	Method of manufacturing a semiconductor device employing a fluorine-based etch substantially free of hydrogen
US20060016783A1 (en) *	2004-07-22	2006-01-26	Dingjun Wu	Process for titanium nitride removal
US7611588B2 (en) *	2004-11-30	2009-11-03	Ecolab Inc.	Methods and compositions for removing metal oxides
KR20080006117A (ko) *	2006-07-11	2008-01-16	동부일렉트로닉스 주식회사	이미지 센서의 배선 구조 및 그 제조 방법
US8921234B2 (en) *	2012-12-21	2014-12-30	Applied Materials, Inc.	Selective titanium nitride etching
CN107794548B (zh) *	2017-09-22	2019-08-06	深圳市中科摩方科技有限公司	一种金属材料的表面除锈方法
CN112458435B (zh) *	2020-11-23	2022-12-09	北京北方华创微电子装备有限公司	原子层沉积设备及清洗方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US453921A (en) *		1891-06-09		Isidor silyerstein and moeris savelson
USRE30505E (en) *	1972-05-12	1981-02-03	Lfe Corporation	Process and material for manufacturing semiconductor devices
US4534921A (en) *	1984-03-06	1985-08-13	Asm Fico Tooling, B.V.	Method and apparatus for mold cleaning by reverse sputtering
US4676866A (en) *	1985-05-01	1987-06-30	Texas Instruments Incorporated	Process to increase tin thickness
US4657616A (en) *	1985-05-17	1987-04-14	Benzing Technologies, Inc.	In-situ CVD chamber cleaner
US4786352A (en) *	1986-09-12	1988-11-22	Benzing Technologies, Inc.	Apparatus for in-situ chamber cleaning
JP2544396B2 (ja) *	1987-08-25	1996-10-16	株式会社日立製作所	半導体集積回路装置の製造方法

1989
- 1989-03-23 US US07/327,630 patent/US4877482A/en not_active Expired - Lifetime
- 1989-11-14 CA CA002002861A patent/CA2002861C/en not_active Expired - Fee Related
1990
- 1990-01-16 MY MYPI90000066A patent/MY105247A/en unknown
- 1990-03-12 EP EP90104635A patent/EP0388749B1/de not_active Expired - Lifetime
- 1990-03-12 DE DE69020200T patent/DE69020200T2/de not_active Expired - Lifetime
- 1990-03-20 KR KR1019900003694A patent/KR100204199B1/ko not_active IP Right Cessation
- 1990-03-22 JP JP2069922A patent/JP2903607B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0388749B1 (de)	1995-06-21
DE69020200D1 (de)	1995-07-27
KR100204199B1 (ko)	1999-06-15
US4877482A (en)	1989-10-31
CA2002861C (en)	1993-10-12
MY105247A (en)	1994-08-30
JPH02305977A (ja)	1990-12-19
CA2002861A1 (en)	1990-09-23
EP0388749A1 (de)	1990-09-26
JP2903607B2 (ja)	1999-06-07
KR900014637A (ko)	1990-10-24

Legal Events

Date	Code	Title	Description
1996-07-18	8364	No opposition during term of opposition
2006-07-06	8327	Change in the person/name/address of the patent owner	Owner name: FREESCALE SEMICONDUCTOR, INC. (N.D.GES.D. STAATES

Publication	Publication Date	Title
DE3851736D1 (de)	1994-11-10	Verfahren zum Grundieren von Hartgewebe.
DE3887812T2 (de)	1994-05-19	Verfahren zum Entfernen von Pyrogenen.
DE69020802T2 (de)	1995-12-07	Verfahren zum Ausheilen von Halbleitern.
DE58900407D1 (de)	1991-12-05	Verfahren zur reinigung von rohargon.
DE69020200D1 (de)	1995-07-27	Verfahren zum Entfernen von Titannitrid.
DE59106977D1 (de)	1996-01-11	Verfahren zum Bearbeiten von Tiefdruckformen.
DE69003423T2 (de)	1994-03-10	Verfahren zur Reinigung von 1,1,1,2-Tetrafluorethan.
DE68923481D1 (de)	1995-08-24	Verfahren zum Behandeln von Sojabohnen.
DE69015841T2 (de)	1995-05-18	Verfahren zum Entfernen von Zwiebelgewächswurzeln.
DE69020304T2 (de)	1996-01-11	Verfahren zum Montieren von Reifen.
DE69006147T2 (de)	1994-08-11	Verfahren zum Bearbeiten von Matrizen.
DE68918000T2 (de)	1995-01-19	Verfahren zur Entfernung von Rückständen.
DE69111740T2 (de)	1996-04-11	Verfahren zum Markieren von Zucker.
DE68921757D1 (de)	1995-04-20	Verfahren zum Trocknen von Oberflächen.
DE68911783D1 (de)	1994-02-10	Verfahren zum Anbau von Zitrusfrüchten.
ATE121264T1 (de)	1995-05-15	Verfahren zum abtöten von mollusken.
DE58906818D1 (de)	1994-03-10	Verfahren zum Desaktivieren von Radikalen.
DE58907896D1 (de)	1994-07-21	Verfahren zum Sterilisieren oder Reinigen von Gegenständen.
DE69001099D1 (de)	1993-04-22	Verfahren zum entfernen von mercaptanen.
DE59004416D1 (de)	1994-03-10	Verfahren zum Reinigen von Dimethylterephthalat.
DE69022174T2 (de)	1996-04-04	Verfahren zum Ganulieren von Polysacchariden.
DE3875981T2 (de)	1993-04-22	Verfahren zum dampfentfetten von gegenstaenden.
DE69003857T2 (de)	1994-02-24	Verfahren zum Parfümieren.
DE3680529D1 (de)	1991-08-29	Verfahren zum pfannenlegieren von wismut.
DE69104313T2 (de)	1995-02-16	Verfahren zum Kandieren von Früchten.