DE69016829T2 - Leseverstärkerschaltung. - Google Patents

Leseverstärkerschaltung.

Info

Publication number
DE69016829T2
DE69016829T2 DE69016829T DE69016829T DE69016829T2 DE 69016829 T2 DE69016829 T2 DE 69016829T2 DE 69016829 T DE69016829 T DE 69016829T DE 69016829 T DE69016829 T DE 69016829T DE 69016829 T2 DE69016829 T2 DE 69016829T2
Authority
DE
Germany
Prior art keywords
amplifier circuit
sense amplifier
sense
circuit
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016829T
Other languages
English (en)
Other versions
DE69016829D1 (de
Inventor
Yasushi Kasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69016829D1 publication Critical patent/DE69016829D1/de
Application granted granted Critical
Publication of DE69016829T2 publication Critical patent/DE69016829T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
DE69016829T 1989-05-16 1990-05-16 Leseverstärkerschaltung. Expired - Fee Related DE69016829T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12192789A JP2583606B2 (ja) 1989-05-16 1989-05-16 センスアンプ回路

Publications (2)

Publication Number Publication Date
DE69016829D1 DE69016829D1 (de) 1995-03-23
DE69016829T2 true DE69016829T2 (de) 1995-10-12

Family

ID=14823368

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016829T Expired - Fee Related DE69016829T2 (de) 1989-05-16 1990-05-16 Leseverstärkerschaltung.

Country Status (5)

Country Link
US (1) US5293088A (de)
EP (1) EP0399362B1 (de)
JP (1) JP2583606B2 (de)
KR (1) KR930004174B1 (de)
DE (1) DE69016829T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0814996B2 (ja) * 1989-06-27 1996-02-14 株式会社東芝 半導体記憶装置
JPH08203271A (ja) * 1995-01-30 1996-08-09 Nec Corp 半導体記憶装置
US5682496A (en) 1995-02-10 1997-10-28 Micron Quantum Devices, Inc. Filtered serial event controlled command port for memory
US6108237A (en) 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5825212A (en) * 1996-08-15 1998-10-20 Lsi Logic Corporation High speed single ended bit line sense amplifier
US6654301B2 (en) 2001-09-27 2003-11-25 Sun Microsystems, Inc. Multiple discharge capable bit line
US6795336B2 (en) * 2001-12-07 2004-09-21 Hynix Semiconductor Inc. Magnetic random access memory
JP4052895B2 (ja) * 2002-08-07 2008-02-27 シャープ株式会社 メモリセル情報の読み出し回路および半導体記憶装置
EP1505605A1 (de) 2003-08-06 2005-02-09 STMicroelectronics S.r.l. Verbesserte Leseanordnung für einen Halbleiterspeicher mit Bitleitungs-Vorladungs- und -Entladungsfunktionen
EP1560221B1 (de) * 2004-01-29 2008-09-03 Sharp Kabushiki Kaisha Halbleiterspeichervorrichtung
KR100618840B1 (ko) 2004-06-29 2006-09-01 삼성전자주식회사 저 전원전압 플래쉬 메모리장치의 감지회로
CN109785889B (zh) * 2018-12-29 2021-08-17 长江存储科技有限责任公司 一种自适应的充放电电路、方法以及设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789312A (en) * 1972-04-03 1974-01-29 Ibm Threshold independent linear amplifier
US4044341A (en) * 1976-03-22 1977-08-23 Rca Corporation Memory array
JPS5644189A (en) * 1979-09-19 1981-04-23 Hitachi Ltd Semiconductor memory
DE3028754C2 (de) * 1980-07-29 1982-10-28 Siemens AG, 1000 Berlin und 8000 München Dynamischer Leseverstärker für MOS-Halbleiterspeicher
US4601014A (en) * 1982-03-19 1986-07-15 Fujitsu Limited Semiconductor memory with word line charge absorbing circuit
US4535259A (en) * 1982-06-18 1985-08-13 Seeq Technology, Inc. Sense amplifier for use with a semiconductor memory array
JPS60136996A (ja) * 1983-12-26 1985-07-20 Toshiba Corp 半導体記憶装置
US4797857A (en) * 1986-04-11 1989-01-10 Texas Instruments Incorporated Array discharge for biased array
JPS61237292A (ja) * 1985-04-15 1986-10-22 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS62197996A (ja) * 1986-02-24 1987-09-01 Toshiba Corp 半導体メモリのセンスアンプ
DD247310A1 (de) * 1986-03-27 1987-07-01 Adw Ddr Stromflussnachweisschaltung fuer definierten stromschwellwert
JPS6383991A (ja) * 1986-09-29 1988-04-14 Toshiba Corp スタテイツク型メモリ
JPS63138598A (ja) * 1986-11-28 1988-06-10 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2595228B2 (ja) * 1987-02-20 1997-04-02 株式会社日立製作所 半導体記憶装置
EP0393027B1 (de) * 1987-05-15 1992-05-13 Analog Devices, Incorporated Leseverstärker
US4939693A (en) * 1989-02-14 1990-07-03 Texas Instruments Incorporated BiCMOS static memory with improved performance stability

Also Published As

Publication number Publication date
JP2583606B2 (ja) 1997-02-19
KR930004174B1 (ko) 1993-05-21
DE69016829D1 (de) 1995-03-23
KR900019046A (ko) 1990-12-22
EP0399362A3 (de) 1991-03-20
JPH02301100A (ja) 1990-12-13
US5293088A (en) 1994-03-08
EP0399362A2 (de) 1990-11-28
EP0399362B1 (de) 1995-02-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee