DE69012360T2 - Verfahren zum Herstellen einer Halbleiteranordnung beim stromlosen Abscheiden von Metall. - Google Patents

Verfahren zum Herstellen einer Halbleiteranordnung beim stromlosen Abscheiden von Metall.

Info

Publication number
DE69012360T2
DE69012360T2 DE69012360T DE69012360T DE69012360T2 DE 69012360 T2 DE69012360 T2 DE 69012360T2 DE 69012360 T DE69012360 T DE 69012360T DE 69012360 T DE69012360 T DE 69012360T DE 69012360 T2 DE69012360 T2 DE 69012360T2
Authority
DE
Germany
Prior art keywords
producing
metal
semiconductor device
currentless deposition
currentless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69012360T
Other languages
English (en)
Other versions
DE69012360D1 (de
Inventor
Der Putten Andreas Martinu Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE69012360D1 publication Critical patent/DE69012360D1/de
Publication of DE69012360T2 publication Critical patent/DE69012360T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69012360T 1989-02-08 1990-02-02 Verfahren zum Herstellen einer Halbleiteranordnung beim stromlosen Abscheiden von Metall. Expired - Fee Related DE69012360T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8900305A NL8900305A (nl) 1989-02-08 1989-02-08 Werkwijze voor het vervaardigen van een halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
DE69012360D1 DE69012360D1 (de) 1994-10-20
DE69012360T2 true DE69012360T2 (de) 1995-04-20

Family

ID=19854095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012360T Expired - Fee Related DE69012360T2 (de) 1989-02-08 1990-02-02 Verfahren zum Herstellen einer Halbleiteranordnung beim stromlosen Abscheiden von Metall.

Country Status (5)

Country Link
US (1) US5017516A (de)
EP (1) EP0382298B1 (de)
JP (1) JPH02246324A (de)
DE (1) DE69012360T2 (de)
NL (1) NL8900305A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9002163A (nl) * 1990-10-05 1992-05-06 Philips Nv Werkwijze voor de vervaardiging van een halfgeleiderinrichting.
NL9100039A (nl) * 1991-01-11 1992-08-03 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
JP2731040B2 (ja) * 1991-02-05 1998-03-25 三菱電機株式会社 半導体装置の製造方法
NL9100241A (nl) * 1991-02-12 1991-08-01 Koninkl Philips Electronics Nv Werkwijze voor de vervaardiging van een halfgeleiderinrichting.
US5246732A (en) * 1991-07-16 1993-09-21 U.S. Philips Corporation Method of providing a copper pattern on a dielectric substrate
US5515604A (en) * 1992-10-07 1996-05-14 Fujitsu Limited Methods for making high-density/long-via laminated connectors
US5462897A (en) * 1993-02-01 1995-10-31 International Business Machines Corporation Method for forming a thin film layer
US5405794A (en) * 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5595943A (en) * 1994-06-30 1997-01-21 Hitachi, Ltd. Method for formation of conductor using electroless plating
DE19705745C2 (de) * 1997-02-14 2002-02-07 Fraunhofer Ges Forschung Verfahren zum Bilden einer strukturierten Metallisierung auf einem Halbleiterwafer
US6136693A (en) * 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
KR100559032B1 (ko) * 1998-12-30 2006-06-19 주식회사 하이닉스반도체 반도체 소자의 콘택 플러그 형성 방법
US6083834A (en) * 1999-01-19 2000-07-04 Taiwan Semiconductor Manufacturing Company Zincate catalysis electroless metal deposition for via metal interconnection
KR100387257B1 (ko) * 1999-12-28 2003-06-11 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성방법
JP2004064039A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd パターン形成方法及びパターン形成装置
US7005379B2 (en) * 2004-04-08 2006-02-28 Micron Technology, Inc. Semiconductor processing methods for forming electrical contacts
US7087972B1 (en) * 2005-01-31 2006-08-08 Freescale Semiconductor, Inc. Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same
US20060188659A1 (en) * 2005-02-23 2006-08-24 Enthone Inc. Cobalt self-initiated electroless via fill for stacked memory cells
FR2909802A1 (fr) * 2006-12-07 2008-06-13 Commissariat Energie Atomique Procede de fabrication d'une couche de siliciure ou de germano-siliciure sur des zones conductrices en silicium ou alliage silicium-germanium d'un substrat
US7501345B1 (en) * 2008-03-28 2009-03-10 International Business Machines Corporation Selective silicide formation by electrodeposit displacement reaction
US9570571B1 (en) * 2015-11-18 2017-02-14 International Business Machines Corporation Gate stack integrated metal resistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3415679A (en) * 1965-07-09 1968-12-10 Western Electric Co Metallization of selected regions of surfaces and products so formed
DE1299769B (de) * 1966-08-26 1969-07-24 Bosch Gmbh Robert Verfahren zur Kontaktierung einer Halbleiteranordnung
NL7200437A (de) * 1972-01-12 1973-07-16
US3993799A (en) * 1974-10-04 1976-11-23 Surface Technology, Inc. Electroless plating process employing non-noble metal hydrous oxide catalyst
US4419390A (en) * 1977-06-06 1983-12-06 Nathan Feldstein Method for rendering non-platable semiconductor substrates platable
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method
US4297393A (en) * 1980-02-28 1981-10-27 Rca Corporation Method of applying thin metal deposits to a substrate
US4634468A (en) * 1984-05-07 1987-01-06 Shipley Company Inc. Catalytic metal of reduced particle size
US4692349A (en) * 1986-03-03 1987-09-08 American Telephone And Telegraph Company, At&T Bell Laboratories Selective electroless plating of vias in VLSI devices
DE3790128C2 (de) * 1986-03-04 1995-07-27 Ishihara Chemical Co Ltd Wässrige Lösung zur stromlosen Beschichtung auf Palladium-Basis

Also Published As

Publication number Publication date
EP0382298B1 (de) 1994-09-14
NL8900305A (nl) 1990-09-03
US5017516A (en) 1991-05-21
JPH02246324A (ja) 1990-10-02
EP0382298A1 (de) 1990-08-16
DE69012360D1 (de) 1994-10-20

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee