DE69007699D1 - Verfahren zur Herstellung von Einkristallfasern aus Siliziumkarbid. - Google Patents

Verfahren zur Herstellung von Einkristallfasern aus Siliziumkarbid.

Info

Publication number
DE69007699D1
DE69007699D1 DE90401909T DE69007699T DE69007699D1 DE 69007699 D1 DE69007699 D1 DE 69007699D1 DE 90401909 T DE90401909 T DE 90401909T DE 69007699 T DE69007699 T DE 69007699T DE 69007699 D1 DE69007699 D1 DE 69007699D1
Authority
DE
Germany
Prior art keywords
production
single crystal
silicon carbide
crystal fibers
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90401909T
Other languages
English (en)
Other versions
DE69007699T2 (de
Inventor
Jean-Pierre Disson
Roland Bachelard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arkema France SA
Original Assignee
Elf Atochem SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elf Atochem SA filed Critical Elf Atochem SA
Publication of DE69007699D1 publication Critical patent/DE69007699D1/de
Application granted granted Critical
Publication of DE69007699T2 publication Critical patent/DE69007699T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)
  • Inorganic Fibers (AREA)
  • Silicon Compounds (AREA)
  • Glass Compositions (AREA)
  • Ceramic Products (AREA)
DE69007699T 1989-07-06 1990-07-02 Verfahren zur Herstellung von Einkristallfasern aus Siliziumkarbid. Expired - Fee Related DE69007699T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8909115A FR2649421A1 (fr) 1989-07-06 1989-07-06 Fibres monocristallines de carbure de silicium et leur procede de fabrication

Publications (2)

Publication Number Publication Date
DE69007699D1 true DE69007699D1 (de) 1994-05-05
DE69007699T2 DE69007699T2 (de) 1994-09-08

Family

ID=9383545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69007699T Expired - Fee Related DE69007699T2 (de) 1989-07-06 1990-07-02 Verfahren zur Herstellung von Einkristallfasern aus Siliziumkarbid.

Country Status (12)

Country Link
EP (1) EP0407286B1 (de)
JP (1) JPH0383900A (de)
KR (1) KR910003160A (de)
CN (1) CN1048570A (de)
AT (1) ATE103644T1 (de)
AU (1) AU5869390A (de)
CA (1) CA2020495A1 (de)
DE (1) DE69007699T2 (de)
FR (1) FR2649421A1 (de)
IE (1) IE902439A1 (de)
IL (1) IL94787A0 (de)
NO (1) NO902996L (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0817874B1 (de) * 1995-03-31 2003-05-28 Hyperion Catalysis International, Inc. Carbid-nanofibrillen und verfahren zum herstellen derselben
CN100378256C (zh) * 2006-09-13 2008-04-02 浙江理工大学 一种合成六棱柱状碳化硅纳米棒的方法
CN102021649B (zh) * 2010-12-24 2012-06-20 吉林大学 利用添加n2o气体化学气相沉积金刚石单晶的方法
CN102828249A (zh) * 2012-04-27 2012-12-19 中国人民解放军第二炮兵工程学院 一种在柔性碳纤维衬底上制备单晶碳化硅纳米线的方法
KR102017138B1 (ko) * 2018-09-20 2019-10-21 주식회사 와이컴 탄화규소 제품의 재생 방법 및 재생된 탄화규소 제품

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840647A (en) * 1969-01-24 1974-10-08 Suwa Seikosha Kk Method for producing whiskers
US4283375A (en) * 1980-01-28 1981-08-11 Great Lakes Carbon Corporation Production of SiC whiskers
JPS6044280B2 (ja) * 1982-02-25 1985-10-02 東海カ−ボン株式会社 炭化けい素ウイスカ−の製造方法
JPS6052120B2 (ja) * 1982-06-04 1985-11-18 タテホ化学工業株式会社 炭化珪素の製造方法
JPS60260499A (ja) * 1984-06-07 1985-12-23 Idemitsu Kosan Co Ltd 炭化ケイ素ウイスカ−の製造方法
JPS6122000A (ja) * 1984-07-06 1986-01-30 Kanebo Ltd 炭化珪素ウイスカ−の製造法
JPS62260798A (ja) * 1986-05-06 1987-11-13 Kobe Steel Ltd 炭化ケイ素ウイスカ−の製造方法
JPH0633237B2 (ja) * 1986-10-17 1994-05-02 株式会社神戸製鋼所 高純度炭化ケイ素ウイスカ−の製造方法
US4873070A (en) * 1986-12-17 1989-10-10 Kabushiki Kaisha Kobe Seiko Sho Process for producing silicon carbide whiskers
US4789536A (en) * 1987-01-20 1988-12-06 J. M. Huber Corporation Process for producing silicon carbide whiskers
FR2611694B1 (fr) * 1987-02-23 1989-05-19 Pechiney Electrometallurgie Procede de preparation de trichites en carbure de silicium
JPH01290600A (ja) * 1988-05-17 1989-11-22 Mitsubishi Gas Chem Co Inc 炭化ケイ素ウィスカーの製造法

Also Published As

Publication number Publication date
CA2020495A1 (fr) 1991-01-07
JPH0383900A (ja) 1991-04-09
IL94787A0 (en) 1991-04-15
NO902996D0 (no) 1990-07-04
FR2649421A1 (fr) 1991-01-11
KR910003160A (ko) 1991-02-27
DE69007699T2 (de) 1994-09-08
EP0407286B1 (de) 1994-03-30
NO902996L (no) 1991-01-07
IE902439A1 (en) 1991-06-19
EP0407286A1 (de) 1991-01-09
AU5869390A (en) 1991-01-10
CN1048570A (zh) 1991-01-16
ATE103644T1 (de) 1994-04-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee