DE69006353D1 - Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten. - Google Patents

Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten.

Info

Publication number
DE69006353D1
DE69006353D1 DE90810383T DE69006353T DE69006353D1 DE 69006353 D1 DE69006353 D1 DE 69006353D1 DE 90810383 T DE90810383 T DE 90810383T DE 69006353 T DE69006353 T DE 69006353T DE 69006353 D1 DE69006353 D1 DE 69006353D1
Authority
DE
Germany
Prior art keywords
cladding
semiconductor plates
facets
split
splitting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90810383T
Other languages
English (en)
Other versions
DE69006353T2 (de
Inventor
Ronald F Dr Broom
Marcel Gasser
Christoph Dr Harder
Ernst-Eberhard Dr Latta
Albertus Oosenbrug
Heinz Richard
Peter Vettiger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69006353D1 publication Critical patent/DE69006353D1/de
Publication of DE69006353T2 publication Critical patent/DE69006353T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Semiconductor Lasers (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
DE69006353T 1990-05-25 1990-05-25 Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten. Expired - Fee Related DE69006353T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP90810383A EP0457998B1 (de) 1990-05-25 1990-05-25 Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten

Publications (2)

Publication Number Publication Date
DE69006353D1 true DE69006353D1 (de) 1994-03-10
DE69006353T2 DE69006353T2 (de) 1994-06-23

Family

ID=8205927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69006353T Expired - Fee Related DE69006353T2 (de) 1990-05-25 1990-05-25 Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten.

Country Status (5)

Country Link
US (1) US5171717A (de)
EP (1) EP0457998B1 (de)
JP (1) JP2518978B2 (de)
CA (1) CA2043173C (de)
DE (1) DE69006353T2 (de)

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US5719077A (en) * 1995-10-30 1998-02-17 Lucent Technologies Inc. Fixture and method for laser fabrication by in-situ cleaving of semiconductor bars
US5665637A (en) * 1995-11-17 1997-09-09 Lucent Technologies Inc. Passivated faceted article comprising a semiconductor laser
JP2914430B2 (ja) * 1996-01-05 1999-06-28 日本電気株式会社 半導体レーザ素子の製造方法
US5911830A (en) * 1996-05-09 1999-06-15 Lucent Technologies Inc. Method and fixture for laser bar facet coating
US5773318A (en) * 1996-10-30 1998-06-30 Lucent Technologies Inc. In-situ technique for cleaving crystals
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EP0898345A3 (de) 1997-08-13 2004-01-02 Mitsubishi Chemical Corporation Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
US6017804A (en) * 1998-01-09 2000-01-25 Lucent Technologies Inc. Method and apparatus for cleaving semiconductor material
US6048747A (en) * 1998-05-01 2000-04-11 Lucent Technologies, Inc. Laser bar cleaving apparatus
US6098862A (en) * 1998-05-18 2000-08-08 Lucent Technologies Inc. Incrementally continuous laser cleaving process
US7156274B2 (en) * 1999-08-17 2007-01-02 Pufahl Joseph A Media separating apparatus and method
EP0977276A1 (de) * 1998-07-08 2000-02-02 Hewlett-Packard Company Spaltenauslösen von Halbleitervorrichtungen
US5989932A (en) * 1998-07-28 1999-11-23 Lucent Technologies, Inc. Method and apparatus for retaining and releasing laser bars during a facet coating operation
US6590920B1 (en) 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
US6074934A (en) * 1998-11-20 2000-06-13 Lucent Technologies Inc. Apparatus for cleaving laser bars
JP3814432B2 (ja) 1998-12-04 2006-08-30 三菱化学株式会社 化合物半導体発光素子
US6102267A (en) * 1998-12-10 2000-08-15 Lucent Technologies, Inc. Method and apparatus for non-contact pulsating jet cleaving of a semiconductor material
US6274458B1 (en) 1999-07-07 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Method of gas cleaving a semiconductor product
US6702170B1 (en) * 1999-08-17 2004-03-09 Joseph A. Pufahl Media separating apparatus and method
WO2002095378A1 (en) * 2000-05-22 2002-11-28 Moore Thomas M Method for sample separation and lift-out
US6451120B1 (en) * 2000-09-21 2002-09-17 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
US6570170B2 (en) 2001-03-01 2003-05-27 Omniprobe, Inc. Total release method for sample extraction from a charged-particle instrument
DE10221952B4 (de) * 2002-05-13 2007-07-12 Forschungsverbund Berlin E.V. Verfahren zur Passivierung der Spiegelflächen von optischen Halbleiterbauelementen
RU2205485C1 (ru) * 2002-09-04 2003-05-27 Закрытое акционерное общество "Научное и технологическое оборудование" Способ изготовления полупроводникового лазерного диода
WO2006068297A1 (en) * 2004-12-22 2006-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
TWI395281B (zh) * 2009-07-23 2013-05-01 Epistar Corp 晶粒分類裝置
DE102009054912A1 (de) * 2009-08-28 2011-03-10 M2K-Laser Gmbh Hochleistungs-Diodenlaser und Verfahren zum Herstellen eines Hochleistungs-Diodenlasers
US8198112B2 (en) 2010-04-14 2012-06-12 Corning Incorporated Laser diodes comprising QWI output window and waveguide areas and methods of manufacture
KR101933113B1 (ko) * 2012-09-18 2018-12-27 엘지디스플레이 주식회사 연성부품용 굴곡시험장치 및 이를 이용한 굴곡시험방법
USD1009775S1 (en) 2014-10-15 2024-01-02 Maxeon Solar Pte. Ltd. Solar panel
US10090430B2 (en) 2014-05-27 2018-10-02 Sunpower Corporation System for manufacturing a shingled solar cell module
USD933584S1 (en) 2012-11-08 2021-10-19 Sunpower Corporation Solar panel
US9780253B2 (en) * 2014-05-27 2017-10-03 Sunpower Corporation Shingled solar cell module
KR102482566B1 (ko) * 2014-05-27 2022-12-29 맥시온 솔라 피티이. 엘티디. 슁글드 태양 전지 모듈
US11482639B2 (en) 2014-05-27 2022-10-25 Sunpower Corporation Shingled solar cell module
CL2016003045A1 (es) * 2014-05-27 2017-06-09 Sunpower Corp Modulo escalonado de celda solar
US11949026B2 (en) 2014-05-27 2024-04-02 Maxeon Solar Pte. Ltd. Shingled solar cell module
CN109545863B (zh) * 2014-05-27 2021-09-14 迈可晟太阳能有限公司 叠盖式太阳能电池模块
USD896747S1 (en) 2014-10-15 2020-09-22 Sunpower Corporation Solar panel
USD999723S1 (en) 2014-10-15 2023-09-26 Sunpower Corporation Solar panel
USD933585S1 (en) 2014-10-15 2021-10-19 Sunpower Corporation Solar panel
USD913210S1 (en) 2014-10-15 2021-03-16 Sunpower Corporation Solar panel
JP6690095B2 (ja) * 2014-10-31 2020-04-28 戸田工業株式会社 セラミック複合シートの分割装置及びセラミック複合シートの製造方法
US10861999B2 (en) 2015-04-21 2020-12-08 Sunpower Corporation Shingled solar cell module comprising hidden tap interconnects
CN110828592B (zh) 2015-08-18 2023-04-28 迈可晟太阳能有限公司 太阳能面板

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DE68915763T2 (de) * 1989-09-07 1994-12-08 Ibm Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.

Also Published As

Publication number Publication date
DE69006353T2 (de) 1994-06-23
CA2043173C (en) 1993-09-21
EP0457998B1 (de) 1994-01-26
JP2518978B2 (ja) 1996-07-31
JPH0722357A (ja) 1995-01-24
US5171717A (en) 1992-12-15
EP0457998A1 (de) 1991-11-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee