DE69000803D1 - Stromquelle mit niedrigem temperaturkoeffizient. - Google Patents
Stromquelle mit niedrigem temperaturkoeffizient.Info
- Publication number
- DE69000803D1 DE69000803D1 DE9090402933T DE69000803T DE69000803D1 DE 69000803 D1 DE69000803 D1 DE 69000803D1 DE 9090402933 T DE9090402933 T DE 9090402933T DE 69000803 T DE69000803 T DE 69000803T DE 69000803 D1 DE69000803 D1 DE 69000803D1
- Authority
- DE
- Germany
- Prior art keywords
- low temperature
- temperature coefficient
- electricity source
- electricity
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8913758A FR2653574B1 (fr) | 1989-10-20 | 1989-10-20 | Source de courant a faible coefficient de temperature. |
FR8913757A FR2653572A1 (fr) | 1989-10-20 | 1989-10-20 | Circuit de reference de tension. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69000803D1 true DE69000803D1 (de) | 1993-03-04 |
DE69000803T2 DE69000803T2 (de) | 1993-06-09 |
Family
ID=26227612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE9090402933T Expired - Fee Related DE69000803T2 (de) | 1989-10-20 | 1990-10-18 | Stromquelle mit niedrigem temperaturkoeffizient. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5103159A (de) |
EP (1) | EP0424264B1 (de) |
DE (1) | DE69000803T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1245237B (it) * | 1991-03-18 | 1994-09-13 | Sgs Thomson Microelectronics | Generatore di tensione di riferimento variabile con la temperatura con deriva termica prestabilita e funzione lineare della tensione di alimentazione |
EP0504983A1 (de) * | 1991-03-20 | 1992-09-23 | Koninklijke Philips Electronics N.V. | Referenzschaltung zum Zuführen eines Referenzstromes mit vorbestimmtem Temperaturkoeffizienten |
IT1252324B (it) * | 1991-07-18 | 1995-06-08 | Sgs Thomson Microelectronics | Circuito integrato regolatore di tensione ad elevata stabilita' e basso consumo di corrente. |
US5428287A (en) * | 1992-06-16 | 1995-06-27 | Cherry Semiconductor Corporation | Thermally matched current limit circuit |
EP0627817B1 (de) * | 1993-04-30 | 1999-04-07 | STMicroelectronics, Inc. | Spannungskomparator mit einer Summierung von auf dem Bandgap-Prinzip beruhenden Gleichströmen und diesen enthaltender Versorgungsspannungsschalter |
US6127881A (en) * | 1994-05-31 | 2000-10-03 | Texas Insruments Incorporated | Multiplier circuit |
US6060945A (en) * | 1994-05-31 | 2000-05-09 | Texas Instruments Incorporated | Burn-in reference voltage generation |
US6204701B1 (en) | 1994-05-31 | 2001-03-20 | Texas Instruments Incorporated | Power up detection circuit |
US5497348A (en) * | 1994-05-31 | 1996-03-05 | Texas Instruments Incorporated | Burn-in detection circuit |
GB9417267D0 (en) * | 1994-08-26 | 1994-10-19 | Inmos Ltd | Current generator circuit |
US5880599A (en) * | 1996-12-11 | 1999-03-09 | Lsi Logic Corporation | On/off control for a balanced differential current mode driver |
US5883507A (en) * | 1997-05-09 | 1999-03-16 | Stmicroelectronics, Inc. | Low power temperature compensated, current source and associated method |
JP3586073B2 (ja) * | 1997-07-29 | 2004-11-10 | 株式会社東芝 | 基準電圧発生回路 |
EP0911978B1 (de) * | 1997-10-23 | 2002-02-13 | STMicroelectronics S.r.l. | Erzeugung von symetrischen temperaturkompensierten rauscharmen Referenzspannungen |
GB0211564D0 (en) * | 2002-05-21 | 2002-06-26 | Tournaz Technology Ltd | Reference circuit |
US6737849B2 (en) | 2002-06-19 | 2004-05-18 | International Business Machines Corporation | Constant current source having a controlled temperature coefficient |
US6919716B1 (en) | 2002-08-28 | 2005-07-19 | Cisco Technology, Inc. | Precision avalanche photodiode current monitor |
US7372316B2 (en) * | 2004-11-25 | 2008-05-13 | Stmicroelectronics Pvt. Ltd. | Temperature compensated reference current generator |
KR100738964B1 (ko) * | 2006-02-28 | 2007-07-12 | 주식회사 하이닉스반도체 | 밴드갭 기준전압 발생 회로 |
KR20100124381A (ko) * | 2009-05-19 | 2010-11-29 | 삼성전자주식회사 | 직접 게이트 구동 기준 전류원 회로 |
FR2995723A1 (fr) * | 2012-09-19 | 2014-03-21 | St Microelectronics Crolles 2 | Circuit de fourniture de tension ou de courant |
JP6083421B2 (ja) * | 2014-08-28 | 2017-02-22 | 株式会社村田製作所 | バンドギャップ基準電圧回路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56121114A (en) * | 1980-02-28 | 1981-09-22 | Seiko Instr & Electronics Ltd | Constant-current circuit |
US4325018A (en) * | 1980-08-14 | 1982-04-13 | Rca Corporation | Temperature-correction network with multiple corrections as for extrapolated band-gap voltage reference circuits |
US4443753A (en) * | 1981-08-24 | 1984-04-17 | Advanced Micro Devices, Inc. | Second order temperature compensated band cap voltage reference |
US4525663A (en) * | 1982-08-03 | 1985-06-25 | Burr-Brown Corporation | Precision band-gap voltage reference circuit |
JPS5952321A (ja) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | 電流源回路 |
JP2525346B2 (ja) * | 1983-10-27 | 1996-08-21 | 富士通株式会社 | 定電流源回路を有する差動増幅回路 |
US4935690A (en) * | 1988-10-31 | 1990-06-19 | Teledyne Industries, Inc. | CMOS compatible bandgap voltage reference |
US4849684A (en) * | 1988-11-07 | 1989-07-18 | American Telephone And Telegraph Company, At&T Bell Laaboratories | CMOS bandgap voltage reference apparatus and method |
FR2652672B1 (fr) * | 1989-10-02 | 1991-12-20 | Sgs Thomson Microelectronics | Memoire a temps de lecture ameliore. |
-
1990
- 1990-10-18 EP EP90402933A patent/EP0424264B1/de not_active Expired - Lifetime
- 1990-10-18 DE DE9090402933T patent/DE69000803T2/de not_active Expired - Fee Related
- 1990-10-19 US US07/600,309 patent/US5103159A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5103159A (en) | 1992-04-07 |
EP0424264B1 (de) | 1993-01-20 |
EP0424264A1 (de) | 1991-04-24 |
DE69000803T2 (de) | 1993-06-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |