DE68919036D1 - Magnetfeldsensoren. - Google Patents
Magnetfeldsensoren.Info
- Publication number
- DE68919036D1 DE68919036D1 DE68919036T DE68919036T DE68919036D1 DE 68919036 D1 DE68919036 D1 DE 68919036D1 DE 68919036 T DE68919036 T DE 68919036T DE 68919036 T DE68919036 T DE 68919036T DE 68919036 D1 DE68919036 D1 DE 68919036D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetic field
- field sensors
- sensors
- magnetic
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/240,778 US4926226A (en) | 1988-09-06 | 1988-09-06 | Magnetic field sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68919036D1 true DE68919036D1 (de) | 1994-12-01 |
DE68919036T2 DE68919036T2 (de) | 1995-02-23 |
Family
ID=22907907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68919036T Expired - Fee Related DE68919036T2 (de) | 1988-09-06 | 1989-07-31 | Magnetfeldsensoren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4926226A (de) |
EP (1) | EP0358322B1 (de) |
JP (1) | JP2781021B2 (de) |
DE (1) | DE68919036T2 (de) |
ES (1) | ES2062008T3 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939563A (en) * | 1989-08-18 | 1990-07-03 | Ibm Corporation | Double carrier deflection high sensitivity magnetic sensor |
US5189367A (en) * | 1991-11-21 | 1993-02-23 | Nec Research Institute, Inc. | Magnetoresistor using a superlattice of GaAs and AlGaAs |
US5373238A (en) * | 1992-11-06 | 1994-12-13 | International Business Machines Corporation | Four layer magnetoresistance device and method for making a four layer magnetoresistance device |
FR2714478B1 (fr) * | 1993-12-23 | 1996-01-26 | Thomson Csf | Détecteur de champ magnétique en couches minces. |
US5883564A (en) * | 1994-04-18 | 1999-03-16 | General Motors Corporation | Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer |
US5491461A (en) * | 1994-05-09 | 1996-02-13 | General Motors Corporation | Magnetic field sensor on elemental semiconductor substrate with electric field reduction means |
US5696655A (en) * | 1996-07-30 | 1997-12-09 | Nec Research Institute, Inc. | Self-biasing non-magnetic giant magnetoresistance |
DE19840032C1 (de) | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
GB2362505A (en) * | 2000-05-19 | 2001-11-21 | Secr Defence | Magnetic Field Sensor |
US6558973B2 (en) | 2001-01-22 | 2003-05-06 | Honeywell International Inc. | Metamorphic long wavelength high-speed photodiode |
US6825514B2 (en) * | 2001-11-09 | 2004-11-30 | Infineon Technologies Ag | High-voltage semiconductor component |
US6819089B2 (en) | 2001-11-09 | 2004-11-16 | Infineon Technologies Ag | Power factor correction circuit with high-voltage semiconductor component |
US7045377B2 (en) * | 2003-06-26 | 2006-05-16 | Rj Mears, Llc | Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction |
US7045813B2 (en) * | 2003-06-26 | 2006-05-16 | Rj Mears, Llc | Semiconductor device including a superlattice with regions defining a semiconductor junction |
US20050064111A1 (en) * | 2003-09-23 | 2005-03-24 | Hiller Nathan David | Method for forming doping superlattices using standing electromagnetic waves |
US20050215036A1 (en) * | 2004-03-26 | 2005-09-29 | Hiller Nathan D | Method for forming a doping superlattice using a laser |
US7956608B1 (en) | 2005-06-27 | 2011-06-07 | Northwestern University | Method of using group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes |
CN105379061B (zh) | 2013-07-12 | 2018-12-04 | 施耐德电气美国股份有限公司 | 用于检测感应充电器中的外来物体的方法和装置 |
EP3207566A4 (de) | 2014-10-13 | 2018-08-29 | Bio-rad Laboratories, Inc. | Beheiztes bildsensorfenster |
WO2018100837A1 (ja) * | 2016-12-02 | 2018-06-07 | Tdk株式会社 | 磁化反転素子、磁気抵抗効果素子、集積素子及び集積素子の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
FR2595509B1 (fr) * | 1986-03-07 | 1988-05-13 | Thomson Csf | Composant en materiau semiconducteur epitaxie sur un substrat a parametre de maille different et application a divers composants en semiconducteurs |
-
1988
- 1988-09-06 US US07/240,778 patent/US4926226A/en not_active Expired - Fee Related
-
1989
- 1989-07-31 DE DE68919036T patent/DE68919036T2/de not_active Expired - Fee Related
- 1989-07-31 ES ES89307773T patent/ES2062008T3/es not_active Expired - Lifetime
- 1989-07-31 EP EP89307773A patent/EP0358322B1/de not_active Expired - Lifetime
- 1989-09-06 JP JP1231359A patent/JP2781021B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ES2062008T3 (es) | 1994-12-16 |
JP2781021B2 (ja) | 1998-07-30 |
EP0358322A2 (de) | 1990-03-14 |
DE68919036T2 (de) | 1995-02-23 |
US4926226A (en) | 1990-05-15 |
EP0358322B1 (de) | 1994-10-26 |
JPH02121378A (ja) | 1990-05-09 |
EP0358322A3 (en) | 1990-11-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |