DE68917654T2 - Anzeigevorrichtung. - Google Patents

Anzeigevorrichtung.

Info

Publication number
DE68917654T2
DE68917654T2 DE68917654T DE68917654T DE68917654T2 DE 68917654 T2 DE68917654 T2 DE 68917654T2 DE 68917654 T DE68917654 T DE 68917654T DE 68917654 T DE68917654 T DE 68917654T DE 68917654 T2 DE68917654 T2 DE 68917654T2
Authority
DE
Germany
Prior art keywords
display device
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917654T
Other languages
English (en)
Other versions
DE68917654D1 (de
Inventor
Akira Nakamura
Kohji Senda
Eiji Fujii
Fumiaki Emoto
Yasuhiro Uemoto
Atsuya Yamamoto
Kazunori Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of DE68917654D1 publication Critical patent/DE68917654D1/de
Publication of DE68917654T2 publication Critical patent/DE68917654T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52Amides or imides
    • C08F220/54Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/104Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
DE68917654T 1988-06-24 1989-06-23 Anzeigevorrichtung. Expired - Fee Related DE68917654T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP15717688 1988-06-24
JP15717488 1988-06-24
JP27991888 1988-11-04
JP6803289 1989-03-20
JP14253489 1989-06-05

Publications (2)

Publication Number Publication Date
DE68917654D1 DE68917654D1 (de) 1994-09-29
DE68917654T2 true DE68917654T2 (de) 1995-03-02

Family

ID=27524077

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917654T Expired - Fee Related DE68917654T2 (de) 1988-06-24 1989-06-23 Anzeigevorrichtung.

Country Status (5)

Country Link
US (1) US5245452A (de)
EP (1) EP0348209B1 (de)
JP (1) JP2651016B2 (de)
CA (1) CA1308471C (de)
DE (1) DE68917654T2 (de)

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* Cited by examiner, † Cited by third party
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JPH06208132A (ja) * 1990-03-24 1994-07-26 Sony Corp 液晶表示装置
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US6143582A (en) * 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
US6593978B2 (en) 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US5499124A (en) 1990-12-31 1996-03-12 Vu; Duy-Phach Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP3556679B2 (ja) * 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
FR2674661B1 (fr) * 1991-03-26 1993-05-14 Thomson Csf Structure de commande matricielle pour ecran de visualisation.
JP2845303B2 (ja) 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
KR970000359B1 (ko) * 1991-09-26 1997-01-08 가부시기가이샤 도오시바 액정표시장치
FR2687824A1 (fr) * 1992-02-21 1993-08-27 Thomson Lcd Afficheur matriciel a materiau electro-optique.
JP2543286B2 (ja) * 1992-04-22 1996-10-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置
JP3486426B2 (ja) * 1993-01-18 2004-01-13 キヤノン株式会社 半導体装置及び液晶表示装置
US5471330A (en) * 1993-07-29 1995-11-28 Honeywell Inc. Polysilicon pixel electrode
JPH0772510A (ja) * 1993-09-07 1995-03-17 Hitachi Ltd アクティブマトリクス型液晶表示装置
US5546204A (en) * 1994-05-26 1996-08-13 Honeywell Inc. TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon
JPH07325323A (ja) * 1994-06-02 1995-12-12 Matsushita Electric Ind Co Ltd 液晶表示装置
US5483366A (en) * 1994-07-20 1996-01-09 David Sarnoff Research Center Inc LCD with hige capacitance pixel having an ITO active region/poly SI pixel region electrical connection and having poly SI selection line extensions along pixel edges
JPH08190106A (ja) * 1995-01-10 1996-07-23 Victor Co Of Japan Ltd アクティブマトリクス装置及びその駆動方法
CN1538228A (zh) * 1997-07-23 2004-10-20 ������������ʽ���� 液晶装置及电子设备
US5990994A (en) * 1997-10-30 1999-11-23 Eastman Kodak Company First and second light sensitive conductive layers for use in image displays
GB2358082B (en) * 2000-01-07 2003-11-12 Seiko Epson Corp Semiconductor transistor
GB2358083B (en) 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor and its manufacturing method
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3736513B2 (ja) * 2001-10-04 2006-01-18 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
TWI229774B (en) 2002-06-11 2005-03-21 Sony Corp Semiconductor device, reflective liquid crystal display apparatus and reflective liquid crystal projection apparatus
KR100930916B1 (ko) 2003-03-20 2009-12-10 엘지디스플레이 주식회사 횡전계형 액정표시장치 및 그 제조방법
US20060103299A1 (en) * 2004-11-15 2006-05-18 The Hong Kong University Of Science And Technology Polycrystalline silicon as an electrode for a light emitting diode & method of making the same
CN100592174C (zh) * 2005-05-21 2010-02-24 香港科技大学 一种透反式液晶器件及其制备方法
CN1964063B (zh) * 2005-11-10 2013-05-29 香港科技大学 适用于有机发光二极管显示器的多晶硅薄膜象素电极
US8754416B2 (en) 2005-11-25 2014-06-17 The Hong Hong University of Science and Technology Method for fabrication of active-matrix display panels
JP5397219B2 (ja) * 2006-04-19 2014-01-22 イグニス・イノベーション・インコーポレイテッド アクティブマトリックス表示装置用の安定な駆動スキーム
US9297998B2 (en) * 2014-03-28 2016-03-29 Amazon Technologies, Inc. Electrode of an electrowetting device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002107A3 (de) * 1977-11-17 1979-09-05 Rca Corporation Verfahren zur Herstellung einer planaren Halbleiteranordnung
US4471371A (en) * 1981-01-06 1984-09-11 Fuji Xerox Co., Ltd. Thin film image pickup element
JPS57126131A (en) * 1981-01-28 1982-08-05 Toshiba Corp Manufacture of semiconductor device
JPS58197775A (ja) * 1982-05-13 1983-11-17 Canon Inc 薄膜トランジスタ
US4876582A (en) * 1983-05-02 1989-10-24 Ncr Corporation Crystallized silicon-on-insulator nonvolatile memory device
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
JPS60254886A (ja) * 1984-05-31 1985-12-16 Olympus Optical Co Ltd 固体撮像装置
US4598305A (en) * 1984-06-18 1986-07-01 Xerox Corporation Depletion mode thin film semiconductor photodetectors
US4732830A (en) * 1984-11-13 1988-03-22 Copytele, Inc. Electrophoretic display panels and associated methods
JPS61138285A (ja) * 1984-12-10 1986-06-25 ホシデン株式会社 液晶表示素子
DE3524086A1 (de) * 1985-07-05 1987-01-08 Vdo Schindling Fluessigkristallzelle
JPS6227716A (ja) * 1985-07-29 1987-02-05 Fuji Photo Film Co Ltd 網点形成用ライトバルブ
JPS62108227A (ja) * 1985-10-31 1987-05-19 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション デイスプレイ装置
JPS62116230U (de) * 1986-01-13 1987-07-23
US4849797A (en) * 1987-01-23 1989-07-18 Hosiden Electronics Co., Ltd. Thin film transistor
US4859623A (en) * 1988-02-04 1989-08-22 Amoco Corporation Method of forming vertical gate thin film transistors in liquid crystal array
US4908518A (en) * 1989-02-10 1990-03-13 Eastman Kodak Company Interline transfer CCD image sensing device with electrode structure for each pixel

Also Published As

Publication number Publication date
JPH03101714A (ja) 1991-04-26
DE68917654D1 (de) 1994-09-29
JP2651016B2 (ja) 1997-09-10
US5245452A (en) 1993-09-14
EP0348209A3 (en) 1990-08-22
EP0348209B1 (de) 1994-08-24
EP0348209A2 (de) 1989-12-27
CA1308471C (en) 1992-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee