DE665416C - Process for the production of a photocell which itself generates a voltage when exposed to light - Google Patents
Process for the production of a photocell which itself generates a voltage when exposed to lightInfo
- Publication number
- DE665416C DE665416C DEF78719D DEF0078719D DE665416C DE 665416 C DE665416 C DE 665416C DE F78719 D DEF78719 D DE F78719D DE F0078719 D DEF0078719 D DE F0078719D DE 665416 C DE665416 C DE 665416C
- Authority
- DE
- Germany
- Prior art keywords
- light
- photocell
- voltage
- production
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung einer Photozelle, die bei Belichtung selbst eine Spannung erzeugt. FCs wurde bereits vorgeschlagen, zur Herstellung solcher Photozellen auf der kristallinen lichtempfindlichen Selenschicht die lichtdurchlässige, leitende Deckschicht im fein verteilten Zustand durch ein Aufschleuderverfahren, z. B. das Schoopsche Aufspritzverfahren oder ein Auf preß- oder Aufreibverfahren, aufzubringen.The invention relates to a method for producing a photocell which generated a tension upon exposure. FCs have already been proposed for manufacture such photocells on the crystalline photosensitive selenium layer the translucent, conductive top layer in a finely distributed state by a spin-on process, z. B. Schoop's spray-on process or a press-on or rubbing-on process, to raise.
Hierbei wird eine Photozelle, die bei Belichtung selbst eine Spannung erzeugt und bei der eine Selenschicht als lichtelektrischer Stoff zwischen einer Trägerelektrode und einer durchsichtigen Elektrode angeordnet ist, in der Weise hergestellt, daß auf die Trägerelektrode Selen aufgeschmolzen, hierauf durch eine weitere Erhitzung das Selen formiert, d. h. in die kristalline Modifikation, überführt und nunmehr als lichtdurchlässige Deckelektrode ein leitendes Material in fein verteiltem Zustand mit Hilfe eines Aufreibverfahrens oder eines Aufpreßverfahrens oder eines derartigen Aufschleuderverfahrens, z. B. des Schoopschen Aufspritzverfahrens, auf die polykristalline Oberfläche des lichtempfindlichen Selens so aufgebracht wird, daß das Material der Deckschicht mit dem Material der lichtempfindlichen Schicht eine innige, lückenlose Verbindung an allen Punkten der kristallinen Oberfläche bei geringem Übergangswiderstand derart eingeht, daß die den Elektronenaustritt hemmenden Einflüsse im Zellaufbau beseitigt werden und ein für technische Meßzwecke ausreichender Strom entsteht. Here, a photocell, which itself generates a voltage when exposed, and with a selenium layer as a photoelectric substance between a carrier electrode and a transparent electrode is arranged in such a way that on the Carrier electrode melted selenium, then the selenium by further heating formed, d. H. into the crystalline modification, transferred and now as translucent Cover electrode a conductive material in a finely divided state with the help of a rubbing process or a press-on process or such a spin-on process, e.g. B. Schoop's spray-on process, onto the polycrystalline surface of the light-sensitive Selenium is applied so that the material of the top layer with the material the light-sensitive layer an intimate, gapless connection at all points of the crystalline surface with low contact resistance is received in such a way that the Influences that inhibit the escape of electrons in the cell structure are eliminated and one for technical Sufficient current is generated for measuring purposes.
Dabei kann die lichtempfindliche Substanzschicht auf eine aufgerauhte Trägerplatte aufgebracht werden.The light-sensitive substance layer can be applied to a roughened carrier plate will.
Erfmdungsgemäß wird dieses Verfahren in der Weise verbessert und weitergebildet, daß für die Deckelektrode Woodmetall, d. h. eine Legierung aus Cadmium, Wismut, Zinn und Blei, Verwendung findet. Es hat sich gezeigt, daß hierdurch in selten hohem Maße die innige mechanische Verbindung der durchscheinenden Deckschicht mit der lichtempfindlichen Schicht und damit die Erzeugung eines hohen Stromes gewährleistet ist.According to the invention, this method is improved and developed in such a way that for the Woodmetall cover electrode, d. H. an alloy of cadmium, bismuth, and tin Lead, is used. It has been shown that this rarely causes the intimate mechanical connection of the translucent cover layer with the light-sensitive Layer and thus the generation of a high current is guaranteed.
Es ist auch möglich, durch Anwendung mäßiger Erwärmung eine schwache Legierung oder oberflächliche chemische Verbindung zwischen dem Stoff der Deckelektrode und dem Stoff der lichtempfindlichen Substanzschicht zu erzeugen.It is also possible to make a weak alloy by applying moderate heating or superficial chemical bond between the material of the cover electrode and the material of the photosensitive substance layer to create.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEF78719D DE665416C (en) | 1930-08-13 | 1930-08-14 | Process for the production of a photocell which itself generates a voltage when exposed to light |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEF0078719 | 1930-08-13 | ||
DEF78719D DE665416C (en) | 1930-08-13 | 1930-08-14 | Process for the production of a photocell which itself generates a voltage when exposed to light |
Publications (1)
Publication Number | Publication Date |
---|---|
DE665416C true DE665416C (en) | 1938-09-24 |
Family
ID=25977851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEF78719D Expired DE665416C (en) | 1930-08-13 | 1930-08-14 | Process for the production of a photocell which itself generates a voltage when exposed to light |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE665416C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1015542B (en) * | 1939-01-22 | 1957-09-12 | Standard Elektrik Ag | Method of manufacturing selenium rectifier plates |
-
1930
- 1930-08-14 DE DEF78719D patent/DE665416C/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1015542B (en) * | 1939-01-22 | 1957-09-12 | Standard Elektrik Ag | Method of manufacturing selenium rectifier plates |
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