DE60335951D1 - Plasmaverarbeitungsgerät - Google Patents

Plasmaverarbeitungsgerät

Info

Publication number
DE60335951D1
DE60335951D1 DE60335951T DE60335951T DE60335951D1 DE 60335951 D1 DE60335951 D1 DE 60335951D1 DE 60335951 T DE60335951 T DE 60335951T DE 60335951 T DE60335951 T DE 60335951T DE 60335951 D1 DE60335951 D1 DE 60335951D1
Authority
DE
Germany
Prior art keywords
processing unit
plasma processing
plasma
unit
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335951T
Other languages
English (en)
Inventor
Tadahiro Ohmi
Masaki Hirayama
Tetsuya Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60335951D1 publication Critical patent/DE60335951D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE60335951T 2002-07-05 2003-07-03 Plasmaverarbeitungsgerät Expired - Lifetime DE60335951D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002197227A JP4540926B2 (ja) 2002-07-05 2002-07-05 プラズマ処理装置
PCT/JP2003/008491 WO2004006319A1 (ja) 2002-07-05 2003-07-03 プラズマ処理装置

Publications (1)

Publication Number Publication Date
DE60335951D1 true DE60335951D1 (de) 2011-03-17

Family

ID=30112393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335951T Expired - Lifetime DE60335951D1 (de) 2002-07-05 2003-07-03 Plasmaverarbeitungsgerät

Country Status (9)

Country Link
US (2) US20050092437A1 (de)
EP (1) EP1521297B1 (de)
JP (1) JP4540926B2 (de)
KR (1) KR100614065B1 (de)
CN (1) CN100405557C (de)
AU (1) AU2003281401A1 (de)
DE (1) DE60335951D1 (de)
TW (1) TWI239052B (de)
WO (1) WO2004006319A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004039969A1 (de) * 2004-08-18 2006-02-23 Leybold Optics Gmbh Plasmaquellenvorrichtung, Anordnung mit einer Plasmaquellenvorrichtung sowie Abstrahleinheit für eine Plasmaquellenvorrichtung
JP4350695B2 (ja) * 2004-12-01 2009-10-21 株式会社フューチャービジョン 処理装置
JP2006244891A (ja) * 2005-03-04 2006-09-14 Tokyo Electron Ltd マイクロ波プラズマ処理装置
JP5082229B2 (ja) * 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
JP5082459B2 (ja) * 2006-01-20 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置及び天板の製造方法
US20080254220A1 (en) 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
TWI443735B (zh) * 2006-01-20 2014-07-01 Tokyo Electron Ltd Plasma processing device
JP4915985B2 (ja) * 2006-02-06 2012-04-11 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR100980529B1 (ko) * 2006-03-27 2010-09-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP2008047869A (ja) * 2006-06-13 2008-02-28 Hokuriku Seikei Kogyo Kk シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP5463536B2 (ja) * 2006-07-20 2014-04-09 北陸成型工業株式会社 シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP5004271B2 (ja) * 2006-09-29 2012-08-22 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、誘電体窓の製造方法およびマイクロ波プラズマ処理方法
JP5010234B2 (ja) 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP5058727B2 (ja) * 2007-09-06 2012-10-24 東京エレクトロン株式会社 天板構造及びこれを用いたプラズマ処理装置
KR101111207B1 (ko) 2009-05-20 2012-02-20 주식회사 에이피시스 플라즈마 발생장치
JP6101467B2 (ja) * 2012-10-04 2017-03-22 東京エレクトロン株式会社 成膜方法及び成膜装置
US20150118416A1 (en) * 2013-10-31 2015-04-30 Semes Co., Ltd. Substrate treating apparatus and method
CN104357810A (zh) * 2014-11-04 2015-02-18 大连理工常州研究院有限公司 一种同轴微波等离子体沉积薄膜的设备
JP6462449B2 (ja) * 2015-03-26 2019-01-30 京セラ株式会社 高周波用窓部材および半導体製造装置用部材ならびにフラットパネルディスプレイ（ｆｐｄ）製造装置用部材
WO2016128560A2 (en) * 2016-02-12 2016-08-18 Applied Materials, Inc. Vacuum processing system and methods therefor
US11776793B2 (en) * 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate
CN112663029B (zh) * 2020-11-30 2021-10-19 上海征世科技股份有限公司 一种微波等离子体化学气相沉积装置及其真空反应室

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2212974B (en) * 1987-11-25 1992-02-12 Fuji Electric Co Ltd Plasma processing apparatus
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
JP2894658B2 (ja) * 1992-01-17 1999-05-24 株式会社東芝 ドライエッチング方法およびその装置
JPH06208952A (ja) * 1993-01-11 1994-07-26 Fuji Electric Co Ltd プラズマｃｖｄ処理装置
US5522933A (en) * 1994-05-19 1996-06-04 Geller; Anthony S. Particle-free microchip processing
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5985089A (en) * 1995-05-25 1999-11-16 Tegal Corporation Plasma etch system
US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
JPH09129607A (ja) * 1995-11-01 1997-05-16 Canon Inc マイクロ波プラズマエッチング装置及び方法
WO1998033362A1 (fr) * 1997-01-29 1998-07-30 Tadahiro Ohmi Dispositif a plasma
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
JPH11186238A (ja) * 1997-12-25 1999-07-09 Nec Corp プラズマ処理装置
JPH11193466A (ja) * 1997-12-26 1999-07-21 Canon Inc プラズマ処理装置及びプラズマ処理方法
US6383964B1 (en) * 1998-11-27 2002-05-07 Kyocera Corporation Ceramic member resistant to halogen-plasma corrosion
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
US6622650B2 (en) * 1999-11-30 2003-09-23 Tokyo Electron Limited Plasma processing apparatus
US6847003B2 (en) * 2000-10-13 2005-01-25 Tokyo Electron Limited Plasma processing apparatus
US6598610B2 (en) * 2001-02-05 2003-07-29 Dalsa Semiconductor Inc. Method of depositing a thick dielectric film
JP2002299240A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置

Also Published As

Publication number Publication date
EP1521297A4 (de) 2006-06-07
AU2003281401A1 (en) 2004-01-23
TWI239052B (en) 2005-09-01
JP4540926B2 (ja) 2010-09-08
TW200414350A (en) 2004-08-01
KR20040045900A (ko) 2004-06-02
US20050092437A1 (en) 2005-05-05
KR100614065B1 (ko) 2006-08-22
CN1533596A (zh) 2004-09-29
US20090229755A1 (en) 2009-09-17
EP1521297A1 (de) 2005-04-06
CN100405557C (zh) 2008-07-23
WO2004006319A1 (ja) 2004-01-15
JP2004039972A (ja) 2004-02-05
EP1521297B1 (de) 2011-02-02

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