DE60325458D1 - Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-Bauelement - Google Patents

Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-Bauelement

Info

Publication number
DE60325458D1
DE60325458D1 DE60325458T DE60325458T DE60325458D1 DE 60325458 D1 DE60325458 D1 DE 60325458D1 DE 60325458 T DE60325458 T DE 60325458T DE 60325458 T DE60325458 T DE 60325458T DE 60325458 D1 DE60325458 D1 DE 60325458D1
Authority
DE
Germany
Prior art keywords
component
transition
integrated
power device
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60325458T
Other languages
English (en)
Inventor
Leonardo Fragapane
Antonino Alessandria
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60325458D1 publication Critical patent/DE60325458D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE60325458T 2003-04-18 2003-04-18 Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-Bauelement Expired - Lifetime DE60325458D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425242A EP1469523B1 (de) 2003-04-18 2003-04-18 Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-Bauelement

Publications (1)

Publication Number Publication Date
DE60325458D1 true DE60325458D1 (de) 2009-02-05

Family

ID=32893035

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60325458T Expired - Lifetime DE60325458D1 (de) 2003-04-18 2003-04-18 Elektronisches Bauteil mit Übergang und mit dem Bauteil integriertes Leistungs-Bauelement

Country Status (4)

Country Link
US (1) US7091559B2 (de)
EP (1) EP1469523B1 (de)
JP (1) JP2004356622A (de)
DE (1) DE60325458D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679097B2 (ja) 2002-05-31 2005-08-03 株式会社光波 発光素子
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
US8085009B2 (en) 2007-08-13 2011-12-27 The Powerwise Group, Inc. IGBT/FET-based energy savings device for reducing a predetermined amount of voltage using pulse width modulation
US8619443B2 (en) 2010-09-29 2013-12-31 The Powerwise Group, Inc. System and method to boost voltage
US8120307B2 (en) 2007-08-24 2012-02-21 The Powerwise Group, Inc. System and method for providing constant loading in AC power applications
US8698447B2 (en) 2007-09-14 2014-04-15 The Powerwise Group, Inc. Energy saving system and method for devices with rotating or reciprocating masses
US8810190B2 (en) 2007-09-14 2014-08-19 The Powerwise Group, Inc. Motor controller system and method for maximizing energy savings
US8004255B2 (en) 2008-08-07 2011-08-23 The Powerwise Group, Inc. Power supply for IGBT/FET drivers
US8164162B2 (en) * 2009-06-11 2012-04-24 Force Mos Technology Co., Ltd. Power semiconductor devices integrated with clamp diodes sharing same gate metal pad
US8698446B2 (en) 2009-09-08 2014-04-15 The Powerwise Group, Inc. Method to save energy for devices with rotating or reciprocating masses
EP2475888B1 (de) 2009-09-08 2019-04-24 The Powerwise Group, Inc. Stromsparsystem und -verfahren für vorrichtungen mit rotierenden oder hin und her bewegten massen
WO2013015014A1 (ja) * 2011-07-22 2013-01-31 富士電機株式会社 超接合半導体装置
JP6512025B2 (ja) * 2015-08-11 2019-05-15 富士電機株式会社 半導体素子及び半導体素子の製造方法
CN106558580B (zh) * 2015-09-30 2019-12-10 无锡华润上华科技有限公司 具有静电释放保护结构的半导体器件
JP2018067570A (ja) * 2016-10-17 2018-04-26 富士電機株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3171042A (en) * 1961-09-08 1965-02-23 Bendix Corp Device with combination of unipolar means and tunnel diode means
JPS5621357A (en) * 1979-07-27 1981-02-27 Pioneer Electronic Corp Integrated circuit device
JPS62199051A (ja) * 1986-02-27 1987-09-02 Sumitomo Electric Ind Ltd 半導体装置の入力保護回路
JPS6350070A (ja) * 1986-08-19 1988-03-02 Matsushita Electronics Corp 縦型ｍｏｓ電界効果トランジスタ
JPH04369863A (ja) * 1991-06-19 1992-12-22 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH06252349A (ja) * 1993-02-23 1994-09-09 Seiko Epson Corp 半導体装置及び半導体装置の製造方法
JPH06342878A (ja) * 1993-04-06 1994-12-13 Fuji Electric Co Ltd 半導体装置
JP2982785B2 (ja) * 1998-04-03 1999-11-29 富士電機株式会社 デプレッション型ｍｏｓ半導体素子およびｍｏｓパワーｉｃ
US6269011B1 (en) * 1999-02-14 2001-07-31 Yazaki Corporation Power supply system having semiconductor active fuse
JP2001085682A (ja) * 1999-09-10 2001-03-30 Toyota Autom Loom Works Ltd パワーｍｏｓトランジスタ
JP4917709B2 (ja) * 2000-03-06 2012-04-18 ローム株式会社 半導体装置
JP2002246598A (ja) * 2001-02-15 2002-08-30 Nec Yamagata Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP1469523B1 (de) 2008-12-24
JP2004356622A (ja) 2004-12-16
US7091559B2 (en) 2006-08-15
EP1469523A1 (de) 2004-10-20
US20040262684A1 (en) 2004-12-30

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