DE60325268D1 - Passiv-gütegeschalteter laser - Google Patents
Passiv-gütegeschalteter laserInfo
- Publication number
- DE60325268D1 DE60325268D1 DE60325268T DE60325268T DE60325268D1 DE 60325268 D1 DE60325268 D1 DE 60325268D1 DE 60325268 T DE60325268 T DE 60325268T DE 60325268 T DE60325268 T DE 60325268T DE 60325268 D1 DE60325268 D1 DE 60325268D1
- Authority
- DE
- Germany
- Prior art keywords
- ncs
- passive
- laser
- sulfide
- powered laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002159 nanocrystal Substances 0.000 abstract 3
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 abstract 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 239000006096 absorbing agent Substances 0.000 abstract 1
- 239000011258 core-shell material Substances 0.000 abstract 1
- 229940056932 lead sulfide Drugs 0.000 abstract 1
- 229910052981 lead sulfide Inorganic materials 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000004054 semiconductor nanocrystal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3523—Non-linear absorption changing by light, e.g. bleaching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Laser Surgery Devices (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42932002P | 2002-11-26 | 2002-11-26 | |
PCT/IL2003/000997 WO2004049522A2 (en) | 2002-11-26 | 2003-11-25 | Passive q-switch laser |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60325268D1 true DE60325268D1 (de) | 2009-01-22 |
Family
ID=32393542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60325268T Expired - Lifetime DE60325268D1 (de) | 2002-11-26 | 2003-11-25 | Passiv-gütegeschalteter laser |
Country Status (6)
Country | Link |
---|---|
US (2) | US20050254528A1 (de) |
EP (1) | EP1565969B1 (de) |
AT (1) | ATE417389T1 (de) |
AU (1) | AU2003282368A1 (de) |
DE (1) | DE60325268D1 (de) |
WO (1) | WO2004049522A2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8817830B2 (en) * | 2002-09-19 | 2014-08-26 | The Uab Research Foundation | Saturable absorbers for Q-switching of middle infrared laser cavaties |
WO2006027778A2 (en) * | 2004-09-09 | 2006-03-16 | Technion Research & Development Foundation Ltd. | Core-alloyed shell semiconductor nanocrystals |
US8784685B2 (en) | 2004-09-09 | 2014-07-22 | Technion Research And Development Foundation Ltd. | Core-alloyed shell semiconductor nanocrystals |
KR100689784B1 (ko) * | 2005-02-03 | 2007-03-08 | 주식회사 현대오토넷 | 적외선 통신을 이용한 교통신호 위반 방지 시스템 및 방법 |
US7811479B2 (en) | 2005-02-07 | 2010-10-12 | The Trustees Of The University Of Pennsylvania | Polymer-nanocrystal quantum dot composites and optoelectronic devices |
CN101805015B (zh) * | 2009-02-17 | 2011-12-21 | 国家纳米科学中心 | 多孔PbS纳米片的制备方法 |
CN101792567B (zh) * | 2010-02-11 | 2012-02-22 | 浙江工业大学 | 以pmma为基底的量子点光纤纤芯材料及其制备和应用 |
DE102013014277A1 (de) | 2013-08-27 | 2015-03-05 | Rosenberger Hochfrequenztechnik Gmbh & Co. Kg | Vorrichtung zum Einkoppeln von Pumplicht in eine Faser und Verfahren zum Herstellen einer solchen Vorrichtung |
KR20160063358A (ko) * | 2013-09-27 | 2016-06-03 | 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕 | 나노구조화된 물질에 대한 전구체로서의 황 및 셀레늄 화합물의 용도 |
WO2016115416A1 (en) | 2015-01-15 | 2016-07-21 | The Trustees Of Columbia University In The City Of New York | Methods of producing metal suflides, metal selenides, and metal sulfides/selenides having controlled architectures using kinetic control |
US10815424B2 (en) | 2015-12-31 | 2020-10-27 | Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. | One-step process for synthesis of core shell nanocrystals |
US10369538B2 (en) | 2015-12-31 | 2019-08-06 | Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. | Flow system and process for photoluminescent nanoparticle production |
TWI626805B (zh) * | 2016-10-28 | 2018-06-11 | National Taipei University Of Technology | 被動式q開關光纖雷射系統及製造其飽和吸收體的方法 |
CN106374332A (zh) * | 2016-11-09 | 2017-02-01 | 南京诺派激光技术有限公司 | 基于硅量子点薄膜的可饱和吸收器件及其在光纤脉冲激光器中的应用 |
CN112751256B (zh) * | 2020-12-24 | 2021-12-10 | 广东工业大学 | 一种基于二碲化钨/二硫化钨异质结的可饱和吸收体和制备方法及其制成的锁模光纤激光器 |
CN112968345B (zh) * | 2021-01-04 | 2022-01-04 | 上海交通大学 | 基于InAs/GaSb超晶格的中红外半导体可饱和吸收镜及其制备方法 |
CN113480165B (zh) * | 2021-07-29 | 2022-10-14 | 深圳市思珀光电通讯有限公司 | 一种量子点掺杂光纤材料及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US918245A (en) * | 1908-07-28 | 1909-04-13 | William Wuthenow | Gas-burner. |
US4738798A (en) * | 1987-01-08 | 1988-04-19 | E. I. Du Pont De Nemours And Company | Semiconductor compositions |
US5110505A (en) * | 1989-02-24 | 1992-05-05 | E. I. Du Pont De Nemours And Company | Small-particle semiconductors in rigid matrices |
US6005707A (en) | 1997-11-21 | 1999-12-21 | Lucent Technologies Inc. | Optical devices comprising polymer-dispersed crystalline materials |
US6251303B1 (en) * | 1998-09-18 | 2001-06-26 | Massachusetts Institute Of Technology | Water-soluble fluorescent nanocrystals |
-
2003
- 2003-11-25 DE DE60325268T patent/DE60325268D1/de not_active Expired - Lifetime
- 2003-11-25 WO PCT/IL2003/000997 patent/WO2004049522A2/en not_active Application Discontinuation
- 2003-11-25 AU AU2003282368A patent/AU2003282368A1/en not_active Abandoned
- 2003-11-25 EP EP03773981A patent/EP1565969B1/de not_active Expired - Lifetime
- 2003-11-25 AT AT03773981T patent/ATE417389T1/de not_active IP Right Cessation
-
2005
- 2005-05-17 US US11/132,037 patent/US20050254528A1/en not_active Abandoned
-
2006
- 2006-10-16 US US11/582,133 patent/US7466727B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050254528A1 (en) | 2005-11-17 |
US20070076770A1 (en) | 2007-04-05 |
US7466727B2 (en) | 2008-12-16 |
ATE417389T1 (de) | 2008-12-15 |
EP1565969B1 (de) | 2008-12-10 |
WO2004049522A2 (en) | 2004-06-10 |
AU2003282368A1 (en) | 2004-06-18 |
WO2004049522A3 (en) | 2004-11-11 |
EP1565969A2 (de) | 2005-08-24 |
AU2003282368A8 (en) | 2004-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |