DE60314203D1 - Einzelphotonemissionsverfahren, Halbleitervorrichtung und dessen Herstellungsverfahren - Google Patents

Einzelphotonemissionsverfahren, Halbleitervorrichtung und dessen Herstellungsverfahren

Info

Publication number
DE60314203D1
DE60314203D1 DE60314203T DE60314203T DE60314203D1 DE 60314203 D1 DE60314203 D1 DE 60314203D1 DE 60314203 T DE60314203 T DE 60314203T DE 60314203 T DE60314203 T DE 60314203T DE 60314203 D1 DE60314203 D1 DE 60314203D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
photon emission
emission method
photon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60314203T
Other languages
English (en)
Inventor
Stephane Monfray
Didier Dutartre
Frederic Boeuf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE60314203D1 publication Critical patent/DE60314203D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
DE60314203T 2002-05-03 2003-04-28 Einzelphotonemissionsverfahren, Halbleitervorrichtung und dessen Herstellungsverfahren Expired - Lifetime DE60314203D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0205539A FR2839388A1 (fr) 2002-05-03 2002-05-03 Procede d'emission d'un photon unique, dispositif semiconducteur et procede de fabrication correspondant

Publications (1)

Publication Number Publication Date
DE60314203D1 true DE60314203D1 (de) 2007-07-19

Family

ID=29226158

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60314203T Expired - Lifetime DE60314203D1 (de) 2002-05-03 2003-04-28 Einzelphotonemissionsverfahren, Halbleitervorrichtung und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US6852993B2 (de)
EP (1) EP1363372B1 (de)
DE (1) DE60314203D1 (de)
FR (1) FR2839388A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9859409B2 (en) * 2016-04-28 2018-01-02 International Business Machines Corporation Single-electron transistor with wrap-around gate
GB201703594D0 (en) * 2017-03-07 2017-04-19 Univ Of Lancaster Single photon source

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720589B1 (en) * 1998-09-16 2004-04-13 Kabushiki Kaisha Toshiba Semiconductor device
JP4029420B2 (ja) * 1999-07-15 2008-01-09 独立行政法人科学技術振興機構 ミリ波・遠赤外光検出器
EP1077492B1 (de) * 1999-08-19 2006-10-11 Hitachi Europe Limited Photodetektor
US6728281B1 (en) * 2000-02-10 2004-04-27 The Board Of Trustees Of The Leland Stanford Junior University Quantum-dot photon turnstile device
FR2809542B1 (fr) * 2000-05-29 2005-02-25 France Telecom Source a un photon a base d'emetteurs dont les frequences sont reparties de maniere choisie

Also Published As

Publication number Publication date
EP1363372A1 (de) 2003-11-19
US20030218163A1 (en) 2003-11-27
FR2839388A1 (fr) 2003-11-07
EP1363372B1 (de) 2007-06-06
US6852993B2 (en) 2005-02-08

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Legal Events

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8332 No legal effect for de