DE60314203D1 - Einzelphotonemissionsverfahren, Halbleitervorrichtung und dessen Herstellungsverfahren - Google Patents
Einzelphotonemissionsverfahren, Halbleitervorrichtung und dessen HerstellungsverfahrenInfo
- Publication number
- DE60314203D1 DE60314203D1 DE60314203T DE60314203T DE60314203D1 DE 60314203 D1 DE60314203 D1 DE 60314203D1 DE 60314203 T DE60314203 T DE 60314203T DE 60314203 T DE60314203 T DE 60314203T DE 60314203 D1 DE60314203 D1 DE 60314203D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- photon emission
- emission method
- photon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Landscapes
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0205539A FR2839388A1 (fr) | 2002-05-03 | 2002-05-03 | Procede d'emission d'un photon unique, dispositif semiconducteur et procede de fabrication correspondant |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60314203D1 true DE60314203D1 (de) | 2007-07-19 |
Family
ID=29226158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60314203T Expired - Lifetime DE60314203D1 (de) | 2002-05-03 | 2003-04-28 | Einzelphotonemissionsverfahren, Halbleitervorrichtung und dessen Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US6852993B2 (de) |
EP (1) | EP1363372B1 (de) |
DE (1) | DE60314203D1 (de) |
FR (1) | FR2839388A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9859409B2 (en) * | 2016-04-28 | 2018-01-02 | International Business Machines Corporation | Single-electron transistor with wrap-around gate |
GB201703594D0 (en) * | 2017-03-07 | 2017-04-19 | Univ Of Lancaster | Single photon source |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6720589B1 (en) * | 1998-09-16 | 2004-04-13 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP4029420B2 (ja) * | 1999-07-15 | 2008-01-09 | 独立行政法人科学技術振興機構 | ミリ波・遠赤外光検出器 |
EP1077492B1 (de) * | 1999-08-19 | 2006-10-11 | Hitachi Europe Limited | Photodetektor |
US6728281B1 (en) * | 2000-02-10 | 2004-04-27 | The Board Of Trustees Of The Leland Stanford Junior University | Quantum-dot photon turnstile device |
FR2809542B1 (fr) * | 2000-05-29 | 2005-02-25 | France Telecom | Source a un photon a base d'emetteurs dont les frequences sont reparties de maniere choisie |
-
2002
- 2002-05-03 FR FR0205539A patent/FR2839388A1/fr active Pending
-
2003
- 2003-04-28 EP EP03291031A patent/EP1363372B1/de not_active Expired - Lifetime
- 2003-04-28 DE DE60314203T patent/DE60314203D1/de not_active Expired - Lifetime
- 2003-05-05 US US10/429,908 patent/US6852993B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1363372A1 (de) | 2003-11-19 |
US20030218163A1 (en) | 2003-11-27 |
FR2839388A1 (fr) | 2003-11-07 |
EP1363372B1 (de) | 2007-06-06 |
US6852993B2 (en) | 2005-02-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |